Abstract:
A method of molding a synthetic silica glass molded body by accommodating a synthetic silica glass block in a mold provided with a pressing portion, and by pressing the block while heating, the method comprising: a step of washing the synthetic silica glass block so that a concentration of copper which is present on the surface of the synthetic silica glass block is 2 ng/cm2 or less, and so that a concentration of aluminium thereon is 10 ng/cm2 or less, before accommodating the synthetic silica glass block in the mold; a step of heating high purity carbon powders in which a content of copper is 40 wt.ppb or less and a content of aluminium is 100 wt.ppb or less at a temperature condition of 1200° C. to 1900° C.; a step of heating the mold at a temperature condition of 1700° C. to 1900° C.; a step of applying the high purity carbon powders after the heating step on the inner surface of the mold after the heating step, before accommodating the synthetic silica glass block in the mold; and a step of molding the synthetic silica glass block in a predetermined form by pressing the block by means of the pressing portion while heating so as to the temperature of the block can be within a hold temperature range of 1500° C. to 1700° C., after accommodating the washed synthetic silica glass block in the mold.
Abstract translation:一种通过将合成石英玻璃块容纳在具有按压部分的模具中并通过在加热时加压块来成型合成石英玻璃成型体的方法,所述方法包括:洗涤合成石英玻璃块,使得 存在于合成石英玻璃块的表面上的铜的浓度在将合成石英玻璃块容纳在模具中之前为2ng / cm 2以下,使其上的铝浓度为10ng / cm 2以下。 在1200℃至1900℃的温度条件下,加热铜含量为40重量ppm以下,铝含量为100重量ppm以下的高纯度碳粉末的工序。 在1700℃至1900℃的温度条件下加热模具的步骤。 在将合成石英玻璃块容纳在模具中之后,在加热步骤之后将高纯度碳粉末加热到模具的内表面之后的步骤; 以及通过在加热的同时通过按压部分压块而使预定形式的合成石英玻璃块成型的步骤,使得块的温度可以在1500℃至1700℃的保持温度范围内 在将洗涤的合成石英玻璃块容纳在模具中之后。
Abstract:
A method of molding a synthetic silica glass molded body by accommodating a synthetic silica glass block in a mold provided with a pressing portion, and by pressing the block while heating, the method including: washing the synthetic silica glass block so that a concentration of copper which is present on the surface of the synthetic silica glass block is 2 ng/cm2 or less; heating high purity carbon powders with a content of copper and aluminium; heating the mold at a temperature condition of 1700° C. to 1900° C.; applying the powders before accommodating the block in the mold; and molding the block in a predetermined form by pressing the block while heating within a hold temperature range of 1500° C. to 1700° C., after accommodating the washed block in the mold.
Abstract translation:一种合成石英玻璃成型体的成型体,其通过将合成石英玻璃块容纳在具有按压部的模具中,并且在加热的同时加压块而成型,其特征在于,包括:洗涤合成石英玻璃块,使铜 存在于合成石英玻璃块的表面上的浓度为2ng / cm 2以下; 加热含有铜和铝的高纯度碳粉; 在1700℃至1900℃的温度条件下加热模具。 在将块容纳在模具中之前施加粉末; 并且在将洗涤的块体容纳在模具中之后,在1500℃至1700℃的保持温度范围内加热的同时通过压制块将模块成型为预定形式。
Abstract:
In an exposure apparatus, an exposure object is exposed to light by applying pulsed light that has a wavelength of 300 nm or less and that has been passed through a plurality of optical components. At least one of the plurality of optical components is made of a synthetic silica glass component. In ultraviolet light applied to the synthetic silica glass component, a width between adjacent top portions of energy density inhomogeneity in a plane perpendicular to an optical axis is larger than 0.1 mm, and a difference between a top portion and a bottom portion of the energy density is 5% or less of an average energy density.
Abstract:
An exposure apparatus includes an illumination optical system configured to illuminate a mask with a laser beam having a wavelength shorter than 250 nm, and a projection optical system configured to project and expose a pattern image of the mask onto an exposed substrate, in which an optical element made of a synthetic quartz member is disposed in the illumination optical system and/or the projection optical system. The synthetic quartz member satisfies the following conditions of initial transmittance relative to light having a wavelength of 150 nm being equal to or above 60% per centimeter, striae satisfying either grade 1 or grade 2 (Japan Optical Glass Industry Society Standard), an absorption coefficient α at 3585 cm−1 equal to or below 0.035/cm, and the content of aluminum and lithium being equal to or below 1 and 0.5 ppm, respectively.
Abstract:
In an exposure apparatus, a light source emits ultraviolet light having a wavelength of 300 nm or less, a homogenizer reduces energy density inhomogeneity of the ultraviolet light in a plane perpendicular to an optical axis, and an exposure object is exposed by applying the ultraviolet light passed through a plurality of optical components. At least one of the plurality of optical components is a synthetic silica glass component, and all the synthetic silica glass component is placed closer to the exposure object than is the homogenizer placed closest to the light source.
Abstract:
In an exposure apparatus, an exposure object is exposed to light by applying pulsed light that has a wavelength of 300 nm or less and that has been passed through a plurality of optical components. At least one of the plurality of optical components is made of a synthetic silica glass component. The thickness of the synthetic silica glass component, and the energy density per pulse and the pulse width of the pulsed light satisfy the following expression: τI−2L−1.7≧0.02 (ns·mJ−2·cm2.3·pulse2) wherein L is the thickness (unit: cm) of the synthetic silica glass component, I is the energy density (unit: mJ·cm−2·pulse−1) per pulse, and τ is the pulse width (unit: ns).
Abstract:
An exposure apparatus includes an illumination optical system configured to illuminate a mask by using a laser beam having a wavelength shorter than 250 nm as a light source, and a projection optical system configured to project and expose a pattern image of the mask onto an exposed substrate, in which an optical element made of a synthetic quartz member is disposed in the illumination optical system and/or the projection optical system. The synthetic quartz member satisfies the following conditions of initial transmittance relative to light having a wavelength of 150 nm being equal to or above 60% per centimeter, striae therein satisfying either grade 1 or grade 2 as defined in Japan Optical Glass Industry Society Standard (JOGIS), an absorption coefficient α for an infrared absorption band of a hydroxyl group located at 3585 cm−1 being equal to or below 0.035/cm, and the content of aluminum being equal to or below 1 ppm while the content of lithium being equal to or below 0.5 ppm.
Abstract:
In an exposure apparatus, an exposure object 15 is exposed to light by applying pulsed light that has a wavelength of 300 nm or less and that has been passed through a plurality of optical components 2, 4a, 4b, 6, 7, 9, and 12. At least one of the plurality of optical components 2, 4a, 4b, 6, 7, 9, and 12 is made of a synthetic silica glass component. The thickness of the synthetic silica glass component, and the energy density per pulse and the pulse width of the pulsed light satisfy the following expression: τI−2L−1.7≧0.02 (ns·mJ−2·cm2.3·pulse2) (L is the thickness (unit: cm) of the synthetic silica glass component, I is the energy density (unit: mJ·cm−2·pulse−1) per pulse, and τ is the pulse width (unit: ns)).
Abstract:
In a method for producing a quartz glass member, an F2 laser is radiated onto a sample obtained from a quartz glass base material under a predetermined condition to judge whether or not a peak intensity of H2 Raman scattering light is decreased by not less than 80% as compared with a peak intensity of H2 Raman scattering light obtained for a sample not irradiated with the F2 laser. If the peak intensity of H2 Raman scattering light is decreased by less than 80%, then it is judged that the laser resistance of the quartz glass base material is sufficient, and the synthetic quartz glass member is processed from the base material. The compaction of the sample is also measured.