Abstract:
The invention relates to compounds of the formula (I) in which Y1 and Y2 are each O or, respectively, NRa or NRb, where Ra and Rb are each H or organyl; Z1 to Z4 are each O or S; R11 to R14, R21 to R24 are each Cl, F; where 1 or 2 of the R11 to R14, R21 to R24 radicals may also be CN and/or 1 R11 to R14, R21 to R24 radical may be H; and where, when Y1 is NRa, Z1 or Z2 may also be NRc, where Ra and Rc together are a bridging X group having from 2 to 5 atoms; and where, when Y2 is NRb, Z3 or Z4 may also be NRd, where Rb and Rd together are a bridging X group having from 2 to 5 atoms; to a process for preparation thereof, and to their use as emitter materials, charge transport materials or exciton transport materials.
Abstract:
The present invention relates to chlorinated naphthalenetetracarboxylic acid derivatives, preparation thereof and use thereof as charge transport materials, exciton transport materials or emitter materials.
Abstract:
A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.
Abstract translation:一种制造有机场效应晶体管的方法,包括以下步骤:a)提供包括位于所述衬底上的栅极结构,源电极和漏极的衬底,以及b)将n型有机半导体化合物施加到 栅极结构,源电极和漏电极所在的衬底的区域,其中n型有机半导体化合物选自式I化合物,其中R 1, R 2,R 3和R 4独立地是氢,氯或溴,条件是这些基团中的至少一个不是 氢,Y 1是O或NR a,其中R a是氢或有机残基,Y 2, 是O或NR b,其中R b是氢或有机残基,Z 1,Z 2, Z 3和Z 4是O,其中,在Y 1是NR a a的情况下, 残基Z 1和Z 2中的一个可以是NR c,其中R a, 另一方面,在末端键之间具有2〜5个原子的桥连基团,其中,在Y 2的情况下,NR 2是其中之一, 残基Z 3和Z 4可以是NR d D基团,其中R b和R 4都是 一起是在末端键之间具有2至5个原子的桥连基团。