摘要:
An integrated circuit including a semiconductor layer; and a MOS transistor including first and second power terminals and a bulk insulated from the semiconductor layer, the first power terminal being intended to receive an oscillating signal, the transistor gate and the bulk being connected to the first power terminal.
摘要:
A resistive device which includes at least one strain gauge (12, 14) comprising silicon nanowires, a power supply (16) that has at least one current source (22, 24) able to generate a current (Ibias) for biasing the strain gauge; and acquisition means (18) able to deliver a measurement signal which can be used to determine the variation in the electrical resistance of the gauge is provided. The power supply includes a chopper (26) allowing the biasing current generated by each current source to flow through each gauge only during a fraction of an operating cycle of the device.
摘要:
The invention proposes a negative gain transconductance amplifier circuit (1) for capacitive load that includes:an RC serial circuit connected between an input terminal (E) of the amplifier circuit and a intermediate terminal (A);an amplification level connected between the intermediate terminal and an output terminal (S) designed to be connected to a capacitive load, and which includes:a first negative gain transconductance amplifier (2) connected via open loop between the intermediate terminal and the output terminal;a second negative gain transconductance amplifier (3) with characteristics that are notably identical to those of the first amplifier, connected via closed loop; its input and output are connected to the intermediate terminal via a resistance (R1).