公开(公告)号：US10263123B2

公开(公告)日：2019-04-16

申请号：US14734156

申请日：2015-06-09

申请人： Magnachip Semiconductor, Ltd.

发明人： Ho Hyun Kim ,  Ha Yong Yang ,  Jeong Hwan Park

IPC分类号： H01L21/283 ,  H01L21/822 ,  H01L27/02 ,  H01L29/866 ,  H01L29/861 ,  H01L29/66 ,  H01L29/43 ,  H01L29/06

摘要： Provided are an electrostatic discharge (ESD) device and method of fabricating the same where the ESD device is configured to prevent electrostatic discharge which can be a cause to product failure. More particularly, the ESD device provided includes a Zener diode and a plurality of PN diodes by improving the architecture of an area wherein a Zener diode is configured compared to alternatives, to provide improved functionality when protecting against ESD events.

公开(公告)号：US09123769B2

公开(公告)日：2015-09-01

申请号：US13915810

申请日：2013-06-12

申请人： Magnachip Semiconductor, Ltd.

发明人： Ho Hyun Kim ,  Seung Bae Hur ,  Seung Wook Song ,  Jeong Hwan Park ,  Ha Yong Yang ,  In Su Kim

IPC分类号： H01L29/66 ,  H01L29/739

CPC分类号： H01L29/1095 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7395 ,  H01L29/7397

摘要： Provided is a power semiconductor device and a fabrication method thereof are provided. The power semiconductor device includes: a first epitaxial layer; a collector layer formed on one side of the first epitaxial layer; and a second epitaxial layer formed on another side of the first epitaxial layer, the first epitaxial layer having a higher doping concentration than the second epitaxial layer.

摘要翻译： 提供了功率半导体器件及其制造方法。 功率半导体器件包括：第一外延层; 集电极层，形成在所述第一外延层的一侧上; 以及形成在所述第一外延层的另一侧上的第二外延层，所述第一外延层具有比所述第二外延层更高的掺杂浓度。