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    Three-axis OIS for super-resolution imaging
    2.
    发明授权
    Three-axis OIS for super-resolution imaging 有权
    三轴OIS用于超分辨率成像

    公开(公告)号：US09426362B2

    公开(公告)日：2016-08-23

    申请号：US14599380

    申请日：2015-01-16

    Applicant: MEMS DRIVE, INC.

    Inventor： Tony Tang ,  Roman Gutierrez

    IPC: H04N5/228 ,  G06K9/40 ,  H04N5/232 ,  G02B26/08 ,  H04N5/225

    CPC classification number: H04N5/23232 ,  G02B26/0875 ,  G02B27/646 ,  H04N5/2253 ,  H04N5/2257 ,  H04N5/23258 ,  H04N5/23287 ,  H04N5/349

    Abstract: Systems and methods are provided for super-resolution imaging using 3-axis OIS. A super-resolution image may be created by enabling optical image stabilization (OIS) in three axes using an OIS system on a camera of an image capturing device; capturing an image of a scene using an image sensor of the camera; shifting the image on the image sensor by a predetermined subpixel amount; capturing the subpixel shifted image; and constructing a super-resolution image of the scene using the image and the subpixel shifted image. In one particular implementation, a position sensor may measure a positional drift of the image sensor after capturing the image. Using this measured positional drift, a time sufficient to shift the image sensor by a predetermined subpixel amount may be determined. The OIS may subsequently be disabled in one or two axes for the determined time.

    Abstract translation: 提供了使用3轴OIS的超分辨率成像的系统和方法。 可以通过使用图像捕获装置的相机上的OIS系统在三个轴上实现光学图像稳定（OIS）来创建超分辨率图像; 使用相机的图像传感器捕获场景的图像; 将图像传感器上的图像移动预定的子像素量; 捕获子像素位移图像; 以及使用图像和子像素位移图像构建场景的超分辨率图像。 在一个具体实现中，位置传感器可以在捕获图像之后测量图像传感器的位置漂移。 使用该测量的位置漂移，可以确定足以将图像传感器移动预定子像素量的时间。 随后可以在一个或两个轴上禁用OIS确定的时间。

    Simplified MEMS device fabrication process
    3.
    发明授权
    Simplified MEMS device fabrication process 有权

    公开(公告)号：US10160641B2

    公开(公告)日：2018-12-25

    申请号：US15468682

    申请日：2017-03-24

    Applicant: MEMS DRIVE, INC.

    Inventor： Roman Gutierrez ,  Tony Tang ,  Xiaolei Liu ,  Matthew Ng ,  Guiqin Wang

    IPC: H01L21/00 ,  B81C1/00 ,  B81C99/00

    Abstract: A simplified MEMS fabrication process and MEMS device is provided that allows for cheaper and lighter-weight MEMS devices to be fabricated. The process comprises etching a plurality of holes or other feature patterns into a MEMS device, and then etching away the underlying wafer such that, after the etching process, the MEMS device is the required thickness and the individual die are separated, avoiding the extra steps of wafer thinning and die dicing. By etching trenches into the substrate wafer and filling them with a MEMS base material, sophisticated taller MEMS devices with larger force may be made.

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