公开(公告)号：US20040228046A1

公开(公告)日：2004-11-18

申请号：US10871165

申请日：2004-06-18

Applicant: Matsushita Electric Industrial Co., Ltd.

Inventor： Masayoshi Hiramoto ,  Akihiro Odagawa ,  Nozomu Matukawa ,  Kenji Iijima ,  Hiroshi Sakakima

IPC: G11B005/127

CPC classification number: H01L43/12 ,  H01L43/10 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

Abstract: The present invention provides a magnetoresistive element that includes a pair of magnetic layers and an intermediate layer between the magnetic layers. The intermediate layer contains at least three elements selected from Groups 2 to 17, and the elements include at least one selected from the group consisting of F, O, N, C and B. According to the invention, a magnetoresistive element with high magnetoresistance change ratio and low resistance can be provided. The invention also provides a method for producing a magnetoresistive element. The method includes forming a precursor and forming at least one part of the intermediate layer from the precursor. The precursor is reacted with at least one reactive species selected from the group consisting of oxygen atoms, nitrogen atoms and carbon atoms in a reactive atmosphere containing the reactive species.

Abstract translation: 本发明提供一种磁阻元件，其包括一对磁性层和磁性层之间的中间层。 中间层含有选自组2至17中的至少三种元素，并且元素包括选自F，O，N，C和B的至少一种。根据本发明，具有高磁阻变化的磁阻元件 可以提供比例和低电阻。 本发明还提供一种制造磁阻元件的方法。 该方法包括形成前体并从前体形成中间层的至少一部分。 在含有反应性物质的反应性气氛中，前体与至少一种选自氧原子，氮原子和碳原子的反应性物质反应。

公开(公告)号：US20040115464A1

公开(公告)日：2004-06-17

申请号：US10730096

申请日：2003-12-09

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Hideaki Adachi ,  Akihiro Odagawa

IPC: H01L029/12

CPC classification number: H01L35/22 ,  H01L35/34 ,  Y10T428/12528

Abstract: A thermoelectric transducing material according to this invention includes a layered cobaltite based substance represented by the chemical formula AxCoO2, wherein A consists of an element or element group selected from alkali metal elements and alkali earth group elements and is compositionally modulated in a thickness-wise direction of layers in a structure of the layered cobaltite based substance.

Abstract translation: 根据本发明的热电转换材料包括由化学式AxCoO2表示的层状钴酸盐基物质，其中A由选自碱金属元素和碱土金属元素的元素或元素组成，并且在厚度方向 的层状钴酸盐物质的结构。

公开(公告)号：US20010021124A1

公开(公告)日：2001-09-13

申请号：US09804867

申请日：2001-03-13

Applicant: Matsushita Electric Industrial Co., Ltd.

Inventor： Akihiro Odagawa ,  Hiroshi Sakakima ,  Kiyoyuki Morita

IPC: G11C011/00

CPC classification number: H01L27/224 ,  G11C11/16

Abstract: A magneto-resistive device and a magneto-resistive effect type storage device are provided, which have improved selectivity and output signals by controlling bias to be applied. Two resistive devices are connected in series, and a magneto-resistive device is used for at least one of the resistive devices. When both of the resistive devices are magneto-resistive devices, their magnetic resistance should be controlled independently from each other, and by allowing the first magneto-resistive device to include a nonmagnetic substance of an electrical insulator and the second magneto-resistive device to include a nonmagnetic substance of a conductive substance, the second magneto-resistive device is operated as a bias control device for controlling the characteristics of the first magneto-resistive device so as to control the voltage to be applied to the storage device. Furthermore, when the other resistive device is configured to be a varistor type device, bias from the non-selected storage device is suppressed to improve the selectivity of the storage device.

Abstract translation: 提供了一种磁阻装置和磁阻效应型存储装置，其通过控制要施加的偏压而具有改进的选择性和输出信号。 两个电阻器件串联连接，并且阻磁器件用于至少一个电阻器件。 当两个电阻性装置都是磁阻装置时，它们的磁阻应该彼此独立地控制，并且通过允许第一磁阻装置包括电绝缘体的非磁性物质，并且第二磁阻装置包括 导电物质的非磁性物质，第二磁阻装置作为偏置控制装置运行，用于控制第一磁阻装置的特性，以便控制施加到存储装置的电压。 此外，当另一个电阻器件被配置为变阻器型器件时，来自未选择的存储器件的偏压被抑制以提高存储器件的选择性。

公开(公告)号：US20040257712A1

公开(公告)日：2004-12-23

申请号：US10896774

申请日：2004-07-22

Applicant: Matsushita Electric Industrial Co., Ltd.

Inventor： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Akihiro Odagawa ,  Kenji Iijima ,  Hiroshi Sakakima

IPC: G11B005/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/11 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B5/3925 ,  G11B5/398 ,  G11B5/40 ,  G11B2005/3996

Abstract: The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.

Abstract translation: 本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。 在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察 在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。 在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。 在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。 在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。

公开(公告)号：US20040213071A1

公开(公告)日：2004-10-28

申请号：US10848742

申请日：2004-05-17

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Masayoshi Hiramoto ,  Nozomu Matukawa ,  Akihiro Odagawa ,  Kenji Iijima ,  Hiroshi Sakakima

IPC: G11C008/02

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F10/3272 ,  H01F41/302 ,  H01L27/228 ,  H01L43/12 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1143 ,  Y10T428/1193

Abstract: The present invention provides a vertical current-type magneto-resistive element. The element includes an intermediate layer and a pair of magnetic layers sandwiching the intermediate layer, and at least one of a free magnetic layer and a pinned magnetic layer is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer. The element area defined by the area of the intermediate layer through which current flows perpendicular to the film is not larger than 1000 nullm2.

公开(公告)号：US20040027733A1

公开(公告)日：2004-02-12

申请号：US10611224

申请日：2003-06-27

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Nozomu Matsukawa ,  Masayoshi Hiramoto ,  Akihiro Odagawa ,  Yasunari Sugita ,  Mitsuo Satomi ,  Yoshio Kawashima

IPC: G11B005/39

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F41/307 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12 ,  Y10T29/49034

Abstract: A magnetoresistive element includes a pair of ferromagnetic layers and a non-magnetic layer arranged between the ferromagnetic layers. At least one of the ferromagnetic layers has a composition expressed by (MxLy)100nullzRz at the interface with the non-magnetic layer. The non-magnetic layer includes at least one element selected from the group consisting of B, C, N, O, and P. Here, M is FeaCobNic, L is at least one element selected from the group consisting of Pt, Pd, Ir, and Rh, R is an element that has a lower free energy to form a compound with the element of the non-magnetic layer that is at least one selected from the group consisting of B, C, N, O, and P than does any other element included in the composition as M or L, and a, b, c, x, y, and z satisfy anullbnullcnull100, anull30, xnullynull100, 0

Abstract translation: 磁阻元件包括一对铁磁层和布置在铁磁层之间的非磁性层。 至少一个铁磁层具有在与非磁性层的界面处由（MxLy）100-zRz表示的组成。 非磁性层包括选自B，C，N，O和P中的至少一种元素。这里，M是FeaCobNic，L是选自Pt，Pd，Ir中的至少一种元素 ，Rh，R是具有较低自由能以与非磁性层的元素形成化合物的元素，所述元素为选自B，C，N，O和P中的至少一种元素。 包含在组合物中的任何其它元素为M或L，a，b，c，x，y和z满足a + b + c = 100，a> = 30，x + y = 100,0

公开(公告)号：US20030196316A1

公开(公告)日：2003-10-23

申请号：US10421989

申请日：2003-04-23

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO.

Inventor： Yoshio Kawashima ,  Akihiro Odagawa ,  Nozomu Matsukawa ,  Yasunari Sugita ,  Yasunori Morinaga

IPC: G11B005/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044

Abstract: The present invention provides a magnetoresistive element that can suppress the characteristic degradation even after high-temperature heat treatment, specifically at 400null C. to 450null C. This element is manufactured by a method that includes the following processes in the indicated order: a film formation process for forming at least a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer on a substrate; a preheat process at 330null C. to 380null C. for not less than 60 minutes; and a heat treatment process at 400null C. to 450null C. This element has a resistance value that changes with a change in relative angle formed by the magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer.

Abstract translation: 本发明提供即使在高温热处理后，特别是在400℃〜450℃也能够抑制特性劣化的磁阻元件。该元件通过以下顺序制造方法：以下述方式制造：a 用于在基板上形成至少第一铁磁层，第二铁磁层和非磁性层的成膜工艺; 在330℃至380℃下预热不少于60分钟; 以及在400℃至450℃的热处理过程。该元件具有随着由第一铁磁层和第二铁磁层的磁化方向形成的相对角度的变化而变化的电阻值。

公开(公告)号：US20010026466A1

公开(公告)日：2001-10-04

申请号：US09803571

申请日：2001-03-09

Applicant: Matsushita Electric Industrial Co. Ltd.

Inventor： Hideaki Adachi ,  Akihiro Odagawa ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Hiroshi Sakakima

IPC: G11C017/02

CPC classification number: G11C11/16

Abstract: A magnetic control device including an antiferromagnetic layer, a magnetic layer placed in contact with one side of the antiferromagnetic layer, and an electrode placed in contact with another side of the antiferromagnetic layer, wherein the direction of the magnetization of the magnetic layer is controlled by voltage applied between the magnetic layer and the electrode. In particular, when an additional magnetic layer is further laminated on the magnetic layer placed in contact with the antiferromagnetic layer via a non-magnetic layer, the direction of the magnetization of the controlled magnetic layer can be detected as a change in the electric resistance. Since such a magnetic control device, in principle, responds to the electric field or magnetic field, it forms a magnetic component capable of detecting an electric signal or a magnetic signal. In this case, the direction of the magnetization basically is maintained until the next signal is detected, so that such a device also can form an apparatus. Thus, a magnetic control device capable of controlling the magnetization with voltage and magnetic component and a memory apparatus using the same are provided.

Abstract translation: 一种磁控制装置，包括反铁磁层，与反铁磁层的一侧接触的磁性层和与反铁磁性层的另一侧接触的电极，其中磁性层的磁化方向由 施加在磁性层和电极之间的电压。 特别地，当通过非磁性层进一步层叠在与反铁磁性层接触的磁性层上的附加磁性层时，可以检测受控磁性层的磁化方向作为电阻的变化。 由于这种磁性控制装置原则上对电场或磁场进行响应，所以形成能够检测电信号或磁信号的磁性部件。 在这种情况下，磁化的方向基本上被维持直到检测到下一个信号，使得这样的装置也可以形成装置。 因此，提供了能够用电压和磁性成分控制磁化的磁控制装置和使用该磁控制装置的存储装置。

公开(公告)号：US20040165428A1

公开(公告)日：2004-08-26

申请号：US10783286

申请日：2004-02-20

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Akihiro Odagawa ,  Nozomu Matsukawa ,  Yasunari Sugita

IPC: G11C011/14

CPC classification number: H01F10/1936 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  G11C11/15 ,  H01F1/405 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

Abstract: A magnetic switching device is provided, which has a configuration different from that of a conventional example and is capable of enhancing an energy conversion efficiency for changing the magnetized state of a magnetic substance. A magnetic memory using the magnetic switching device also is provided. The magnetic switching device includes a magnetic layer, a transition layer magnetically coupled to the magnetic layer, and a carrier supplier including at least one selected from metal and a semiconductor. The transition layer and the carrier supplier are placed in such a manner that a voltage can be applied between the transition layer and the carrier supplier. The transition layer undergoes a non-ferromagnetism-ferromagnetism transition by the application of a voltage, and the magnetized state of the magnetic layer is changed by the transition of the transition layer.

Abstract translation: 提供一种磁性开关装置，其具有与常规示例不同的配置，并且能够提高用于改变磁性物质的磁化状态的能量转换效率。 还提供了使用磁开关装置的磁存储器。 磁性开关器件包括磁性层，与磁性层磁耦合的过渡层，以及包括从金属和半导体中选择的至少一种的载体供给器。 过渡层和载体供给器的放置方式是可以在过渡层和载体供应者之间施加电压。 过渡层通过施加电压而经历非铁磁 - 铁磁转变，并且通过过渡层的转变改变磁性层的磁化状态。

公开(公告)号：US20040130431A1

公开(公告)日：2004-07-08

申请号：US10732053

申请日：2003-12-10

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Nozomu Matsukawa ,  Akihiro Odagawa ,  Yasunari Sugita ,  Mitsuo Satomi ,  Yoshio Kawashima

IPC: H01L043/00 ,  H01L043/02

CPC classification number: H01L43/10 ,  B82Y25/00 ,  G01R33/093 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272

Abstract: A magnetoresistive element of the present invention includes a multilayer structure that includes a non-magnetic layer (3) and a pair of ferromagnetic layers (1, 2) stacked on both sides of the non-magnetic layer (3). A resistance value differs depending on a relative angle between the magnetization directions of the ferromagnetic layers (1, 2) at the interfaces with the non-magnetic layer (3). The composition of at least one of the ferromagnetic layers (1, 2) in a range of 2 nm from the interface with the non-magnetic layer (3) is expressed by (MxOy)1-zZz, where Z is at least one element selected from the group consisting of Ru, Os, Rh, Ir, Pd, Pt, Cu, Ag, and Au, M is at least one element selected from the group consisting of elements other than Z and O and includes a ferromagnetic metal, and x, y, and z satisfy 0.33

Abstract translation: 本发明的磁阻元件包括层叠在非磁性层（3）的两侧的非磁性层（3）和一对铁磁体层（1,2）的多层结构体。 电阻值根据与非磁性层（3）的界面处的铁磁层（1,2）的磁化方向之间的相对角度而不同。 从与非磁性层（3）的界面在2nm范围内的铁磁层（1,2）中的至少一个的组成由（M×Oy）1-zZz表示，其中Z是至少一个元素 选自由Ru，Os，Rh，Ir，Pd，Pt，Cu，Ag和Au组成的组中的至少一种元素，M是选自Z和O以外的元素中的至少一种元素，并且包括铁磁性金属，以及 x，y和z满足0.33