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公开(公告)号:US09397470B2
公开(公告)日:2016-07-19
申请号:US14694016
申请日:2015-04-23
Applicant: Lumentum Operations LLC
Inventor: Jay A. Skidmore , Victor Rossin , Pierre Doussiere
CPC classification number: H01S5/024 , G01C3/08 , G01S13/88 , H01S5/02461 , H01S5/02469 , H01S5/02476 , H01S5/0262 , H01S5/4031
Abstract: An array of laser diode emitters is used as an illumination source for a range imaging system. The laser diode emitters are disposed on a common substrate. When one of the emitters fails, the remaining emitters emit enough light to meet the output optical power specification. The emitters can be disposed with a tight spacing. The tight spacing facilitates packaging of the entire array into a compact single package on a common heat sink.
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公开(公告)号:US20190288077A1
公开(公告)日:2019-09-19
申请号:US15923801
申请日:2018-03-16
Applicant: Lumentum Operations LLC
Inventor: Arnaud FILY , Victor Rossin , David Venables , Jingcong Wang
IPC: H01L29/32 , H01S5/24 , H01S5/02 , H01L21/762 , H01S5/183 , H01L29/06 , H01L21/82 , H01L21/3065 , H01L21/66 , H01L21/306
Abstract: A light-emitting device may comprise a set of layers comprising a substrate layer, and a set of epitaxial layers deposited on the substrate layer. The set of epitaxial layers may include a strained layer. The strained layer may include a set of active zones to be used to generate optical gain. The light-emitting device may comprise a set of trenches etched into a subset of the set of layers of the light-emitting device. The set of trenches may prevent a set of defects or dislocations in a wafer from which the light-emitting device was formed from propagating into the set of active zones.
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公开(公告)号:US10784354B2
公开(公告)日:2020-09-22
申请号:US15923801
申请日:2018-03-16
Applicant: Lumentum Operations LLC
Inventor: Arnaud Fily , Victor Rossin , David Venables , Jingcong Wang
IPC: H01L29/32 , H01S5/02 , H01L21/762 , H01S5/183 , H01L29/06 , H01L21/82 , H01L21/3065 , H01L21/66 , H01L21/306 , H01S5/24 , H01L33/12 , H01S5/32 , H01S5/34
Abstract: A light-emitting device may comprise a set of layers comprising a substrate layer, and a set of epitaxial layers deposited on the substrate layer. The set of epitaxial layers may include a strained layer. The strained layer may include a set of active zones to be used to generate optical gain. The light-emitting device may comprise a set of trenches etched into a subset of the set of layers of the light-emitting device. The set of trenches may prevent a set of defects or dislocations in a wafer from which the light-emitting device was formed from propagating into the set of active zones.
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