公开(公告)号：US10784354B2

公开(公告)日：2020-09-22

申请号：US15923801

申请日：2018-03-16

Applicant: Lumentum Operations LLC

Inventor： Arnaud Fily ,  Victor Rossin ,  David Venables ,  Jingcong Wang

IPC: H01L29/32 ,  H01S5/02 ,  H01L21/762 ,  H01S5/183 ,  H01L29/06 ,  H01L21/82 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/306 ,  H01S5/24 ,  H01L33/12 ,  H01S5/32 ,  H01S5/34

Abstract: A light-emitting device may comprise a set of layers comprising a substrate layer, and a set of epitaxial layers deposited on the substrate layer. The set of epitaxial layers may include a strained layer. The strained layer may include a set of active zones to be used to generate optical gain. The light-emitting device may comprise a set of trenches etched into a subset of the set of layers of the light-emitting device. The set of trenches may prevent a set of defects or dislocations in a wafer from which the light-emitting device was formed from propagating into the set of active zones.

公开(公告)号：US20190288077A1

公开(公告)日：2019-09-19

申请号：US15923801

申请日：2018-03-16

Applicant: Lumentum Operations LLC

Inventor： Arnaud FILY ,  Victor Rossin ,  David Venables ,  Jingcong Wang

IPC: H01L29/32 ,  H01S5/24 ,  H01S5/02 ,  H01L21/762 ,  H01S5/183 ,  H01L29/06 ,  H01L21/82 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/306

Abstract: A light-emitting device may comprise a set of layers comprising a substrate layer, and a set of epitaxial layers deposited on the substrate layer. The set of epitaxial layers may include a strained layer. The strained layer may include a set of active zones to be used to generate optical gain. The light-emitting device may comprise a set of trenches etched into a subset of the set of layers of the light-emitting device. The set of trenches may prevent a set of defects or dislocations in a wafer from which the light-emitting device was formed from propagating into the set of active zones.

公开(公告)号：US20190148918A1

公开(公告)日：2019-05-16

申请号：US16146180

申请日：2018-09-28

Applicant: Lumentum Operations LLC

Inventor： Matthew Glenn Peters ,  David Venables ,  Eric R. Hegblom ,  Ajit Vijay Barve

IPC: H01S5/42 ,  H01S5/183

Abstract: A die may comprise a plurality of adjacent emitters and a potential dislocation line. The plurality of adjacent emitters and the potential dislocation line may be offset from each other within a range of angles based on a relative rotation of the plurality of adjacent emitters and the potential dislocation line.