Distributed Oxide Lens for Beam Shaping
    2.
    发明申请

    公开(公告)号:US20200169062A1

    公开(公告)日:2020-05-28

    申请号:US16719270

    申请日:2019-12-18

    Abstract: A vertical-cavity surface-emitting laser (VCSEL) may include a substrate and a set of epitaxial layers on the substrate. The set of epitaxial layers may include a first mirror and a second mirror, an active region between the first mirror and the second mirror, and an oxidation layer to provide optical and electrical confinement in the VCSEL. The oxidation layer may be near the first mirror. The set of epitaxial layers may include an oxide lens to control a characteristic of an output beam emitted by the VCSEL. The oxide lens may be separate from the oxidation layer, and may be a lens that is separate from the first mirror and from the second mirror.

    VARIABLE EMISSION AREA DESIGN FOR A VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY

    公开(公告)号:US20190222002A1

    公开(公告)日:2019-07-18

    申请号:US16366458

    申请日:2019-03-27

    CPC classification number: H01S5/423 H01S5/18311 H01S5/18344 H01S5/18394

    Abstract: A vertical cavity surface emitting laser (VCSEL) array may include a plurality of VCSELs. A size of an emission area of a first VCSEL, of the plurality of VCSELs, may be different from a size of an emission area of a second VCSEL of the plurality of VCSELs. The first VCSEL may be located closer to a center of the VCSEL array than the second VCSEL. A difference between the size of the emission area of the first VCSEL and the size of the emission area of the second VCSEL may be associated with reducing a difference in operating temperature between the first VCSEL and the second VCSEL, or reducing a difference in optical power output between the first VCSEL and the second VCSEL.

    Vertical-cavity surface-emitting laser thin wafer bowing control

    公开(公告)号:US10205303B1

    公开(公告)日:2019-02-12

    申请号:US15787029

    申请日:2017-10-18

    Inventor: Eric R. Hegblom

    Abstract: A vertical-cavity surface-emitting laser (VCSEL) wafer, may include: a substrate layer, epitaxial layers grown on the substrate layer, and a strain compensating layer to control bowing of the VCSEL wafer after thinning of the VCSEL wafer. The strain compensating layer may be arranged on an epitaxial side of the substrate layer. The strain compensating layer may control bowing of the thinned VCSEL wafer by at least partially compensating for compressive strain in the epitaxial layers of the VCSEL wafer.

    Emitter array with multiple groups of interspersed emitters

    公开(公告)号:US11462888B2

    公开(公告)日:2022-10-04

    申请号:US16587866

    申请日:2019-09-30

    Inventor: Eric R. Hegblom

    Abstract: An optical device may include an emitter array including a plurality of emitter groups. Each emitter group may be independently addressable from other emitter groups, of the plurality of emitter groups, for independently lasing. Emitters of the plurality of emitter groups may be interspersed within the emitter array such that a minimum emitter-to-emitter distance within the emitter array is less than a minimum emitter-to-emitter distance within any of the emitter groups.

    Temperature control for bottom-emitting wafer-level vertical cavity surface emitting laser testing

    公开(公告)号:US11340290B2

    公开(公告)日:2022-05-24

    申请号:US16915246

    申请日:2020-06-29

    Inventor: Eric R. Hegblom

    Abstract: A testing device may include a stage associated with holding an emitter wafer during testing of an emitter. The stage may be arranged such that light emitted by the emitter passes through the stage. The testing device may include a heat sink arranged such that the light emitted by the emitter during the testing is emitted in a direction away from the heat sink, and such that a first surface of the heat sink is near a surface of the emitter wafer during the testing but does not contact the surface of the emitter wafer. The testing device may include a probe card, associated with performing the testing of the emitter, that is arranged over a second surface of the heat sink such that, during the testing of the emitter, a probe of the probe card contacts a probe pad for the emitter through an opening in the heat sink.

    Vertical-cavity surface-emitting laser with dense epi-side contacts

    公开(公告)号:US11581705B2

    公开(公告)日:2023-02-14

    申请号:US16795172

    申请日:2020-02-19

    Abstract: An emitter may include a substrate, a conductive layer on at least a bottom surface of a trench, and a first metal layer to provide a first electrical contact of the emitter on an epitaxial side of the substrate. The first metal layer may be within the trench such that the first metal layer contacts the conductive layer within the trench. The emitter may further include a second metal layer to provide a second electrical contact of the emitter on the epitaxial side of the substrate, and an isolation implant to block lateral current flow between the first electrical contact and the second electrical contact.

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