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    ZONED OPTICAL WAVEPLATE
    1.
    发明申请
    ZONED OPTICAL WAVEPLATE 有权
    分区光波导

    公开(公告)号：US20170017028A1

    公开(公告)日：2017-01-19

    申请号：US14798764

    申请日：2015-07-14

    Applicant: Lumentum Operations LLC

    Inventor： John Michael MILLER ,  Joel MILGRAM ,  Karen Denise HENDRIX ,  Michael O'LEARY ,  Hery DJIE ,  Lu TIAN ,  Paul COLBOURNE

    IPC: G02B5/30 ,  G02B1/12 ,  G03F7/00 ,  G02B1/11

    CPC classification number: G02B1/12 ,  G02B1/11 ,  G02B5/1809 ,  G02B5/3083 ,  G02B27/286 ,  G03F7/0005

    Abstract: A zoned waveplate has a series of transversely stacked birefringent zones alternating with non-birefringent zones. The birefringent and non-birefringent zones are integrally formed upon an AR-coated face of a single substrate by patterning the AR coated face of the substrate with zero-order sub-wavelength form-birefringent gratings configured to have a target retardance. The layer structure of the AR coating is designed to provide the target birefringence in the patterned zones and the reflection suppression.

    Abstract translation: 分区波片具有与非双折射区交替的一系列横向堆叠的双折射区。 双折射和非双折射区域通过用配置成具有目标延迟的零级亚波长形式双折射光栅图案化衬底的AR涂覆面而整体地形成在单个衬底的涂覆AR的面上。 AR涂层的层结构被设计成在图案化区域中提供目标双折射和反射抑制。

    EMITTER ARRAY THAT INCLUDES INHOMOGENEOUS EMITTER DISTRIBUTION TO FLATTEN A BEAM PROFILE OF THE EMITTER ARRAY
    2.
    发明申请
    EMITTER ARRAY THAT INCLUDES INHOMOGENEOUS EMITTER DISTRIBUTION TO FLATTEN A BEAM PROFILE OF THE EMITTER ARRAY 有权

    公开(公告)号：US20210066892A1

    公开(公告)日：2021-03-04

    申请号：US16949702

    申请日：2020-11-11

    Applicant: Lumentum Operations LLC

    Inventor： Xiaohua LOU ,  Delai ZHOU ,  Hery DJIE

    IPC: H01S5/42

    Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.

    SEMICONDUCTOR LAYER STRUCTURE WITH A THIN BLOCKING LAYER
    3.
    发明公开
    SEMICONDUCTOR LAYER STRUCTURE WITH A THIN BLOCKING LAYER 审中-公开

    公开(公告)号：US20230307891A1

    公开(公告)日：2023-09-28

    申请号：US18326465

    申请日：2023-05-31

    Applicant: Lumentum Operations LLC

    Inventor： Ting LIU ,  Xing LI ,  Hery DJIE

    IPC: H01S5/34

    CPC classification number: H01S5/3407 ,  H01S5/3425

    Abstract: A semiconductor layer structure may include a substrate, a blocking layer disposed over the substrate, and one or more epitaxial layers disposed over the blocking layer. The blocking layer may have a thickness of between 50 nanometers (nm) and 4000 nm. The blocking layer may be configured to suppress defects from the substrate propagating to the one or more epitaxial layers. The one or more epitaxial layers may include a quantum-well layer that includes a quantum-well intermixing region formed using a high temperature treatment.

    PATTERNED WAFER MICRORULER FOR OVERSPRAY SCREENING OF LASER ANTI-REFLECTIVE AND/OR HIGHLY REFLECTIVE FACET COATINGS
    5.
    发明公开
    PATTERNED WAFER MICRORULER FOR OVERSPRAY SCREENING OF LASER ANTI-REFLECTIVE AND/OR HIGHLY REFLECTIVE FACET COATINGS 审中-公开

    公开(公告)号：US20230261437A1

    公开(公告)日：2023-08-17

    申请号：US17806991

    申请日：2022-06-15

    Applicant: Lumentum Operations LLC

    Inventor： ZiWen DONG ,  Hery DJIE ,  Anuj MADARIA ,  Yutong LI ,  Ran HUANG

    IPC: H01S5/028 ,  H01S5/02 ,  H01S5/40

    CPC classification number: H01S5/0287 ,  H01S5/0202 ,  H01S5/4025

    Abstract: In some implementations, a microruler is patterned on a surface of a wafer to enable visual overspray screening and/or quantitative measurement. For example, a laser bar cleaved from a wafer may comprise multiple laser devices that each include a first facet and a second facet, an anti-reflective (AR) coating applied to the first facet, and a highly reflective (HR) coating applied to the second facet. Furthermore, a set of microrulers may be patterned on a surface of the laser bar, where each microruler in the set of microrulers is aligned with a bar cleaving line where the laser bar was cleaved from the wafer, and each microruler has multiple graduation markings that each represent a respective distance from the bar cleaving line such that the graduation markings can be used to quantitatively measure an overspray of the AR coating or the HR coating relative to the bar cleaving line.

    SEMICONDUCTOR LAYER STRUCTURE WITH A THIN BLOCKING LAYER
    6.
    发明申请
    SEMICONDUCTOR LAYER STRUCTURE WITH A THIN BLOCKING LAYER 有权

    公开(公告)号：US20210408766A1

    公开(公告)日：2021-12-30

    申请号：US16947876

    申请日：2020-08-21

    Applicant: Lumentum Operations LLC

    Inventor： Ting LIU ,  Xing LI ,  Hery DJIE

    IPC: H01S5/34

    Abstract: A semiconductor layer structure may include a substrate, a blocking layer disposed over the substrate, and one or more epitaxial layers disposed over the blocking layer. The blocking layer may have a thickness of between 50 nanometers (nm) and 4000 nm. The blocking layer may be configured to suppress defects from the substrate propagating to the one or more epitaxial layers. The one or more epitaxial layers may include a quantum-well layer that includes a quantum-well intermixing region formed using a high temperature treatment.

    EMITTER ARRAY THAT INCLUDES INHOMOGENEOUS EMITTER DISTRIBUTION TO FLATTEN A BEAM PROFILE OF THE EMITTER ARRAY
    7.
    发明申请
    EMITTER ARRAY THAT INCLUDES INHOMOGENEOUS EMITTER DISTRIBUTION TO FLATTEN A BEAM PROFILE OF THE EMITTER ARRAY 审中-公开

    公开(公告)号：US20190267778A1

    公开(公告)日：2019-08-29

    申请号：US16202510

    申请日：2018-11-28

    Applicant: Lumentum Operations LLC

    Inventor： Xiaohua LOU ,  Delai ZHOU ,  Hery DJIE

    IPC: H01S5/42

    Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.

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