公开(公告)号：US20130045339A1

公开(公告)日：2013-02-21

申请号：US13210122

申请日：2011-08-15

Applicant: Ludovic Godet ,  Xianfeng Lu ,  Anthony Renau

Inventor： Ludovic Godet ,  Xianfeng Lu ,  Anthony Renau

IPC: H05H1/24 ,  C23C16/50 ,  B05C11/00

CPC classification number: C23C14/0611 ,  C23C14/042 ,  C23C14/221 ,  C23C14/54

Abstract: Techniques for diamond nucleation control for thin film processing are disclosed. In one particular embodiment, the techniques may be realized as a method for generating a plasma having a plurality of ions; depositing a plurality of diamond nucleation centers on a substrate with the ions in the plasma using an extraction plate having at least one gap, wherein the plasma ions pass through the at least one gap in the extraction plate to generate a focused ion beam to deposit the plurality of diamond nucleation centers; and controlling the growth of a continuous diamond film from the diamond nucleation centers on the substrate by controlling at least one of a temperature around the substrate, a temperature of the plasma, a pressure around the substrate, and a concentration of the ions in the plasma.

公开(公告)号：US08288255B2

公开(公告)日：2012-10-16

申请号：US13364415

申请日：2012-02-02

Applicant: Xianfeng Lu ,  Ludovic Godet ,  Anthony Renau

Inventor： Xianfeng Lu ,  Ludovic Godet ,  Anthony Renau

IPC: H01L21/265 ,  H01L21/425

CPC classification number: H01L21/425 ,  H01L29/22 ,  H01L29/227 ,  H01L31/02963

Abstract: ZnTe is implanted with a first species selected from Group III and a second species selected from Group VII. This may be preformed using sequential implants, implants of the first species and second species that are at least partially simultaneous, or a molecular species comprising an atom selected from Group III and an atom selected from Group VII. The implants may be performed at an elevated temperature in one instance between 70° C. and 800° C.

Abstract translation: ZnTe植入选自III族的第一种和选自第VII组的第二种。 这可以使用顺序植入物，第一物质的植入物和至少部分同时的第二物质，或包含选自III族的原子和选自VII族的原子的分子物质来进行。 植入物可以在70℃和800℃之间的一个高温下进行。

公开(公告)号：US09425027B2

公开(公告)日：2016-08-23

申请号：US13470731

申请日：2012-05-14

Applicant: Ludovic Godet ,  Christopher Hatem ,  Deepak Ramappa ,  Xianfeng Lu ,  Anthony Renau ,  Patrick Martin

Inventor： Ludovic Godet ,  Christopher Hatem ,  Deepak Ramappa ,  Xianfeng Lu ,  Anthony Renau ,  Patrick Martin

IPC: C23C14/48 ,  C23C14/34 ,  H01J37/32 ,  B41J2/16

CPC classification number: C23C14/48 ,  B41J2/1606 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/32623

Abstract: Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids.

Abstract translation: 通过离子注入来影响材料性质的方法，例如通过使用具有等离子体护套改性剂的等离子体处理装置。 以这种方式，可以影响耐化学性，粘合性，疏水性和亲水性等特性。 这些方法可以应用于各种技术。 在某些情况下，离子注入用于制造打印头，以通过增加材料疏水性来减少堵塞。 在其他实施例中，使用离子注入来生产MEMS和NEMS装置，以改变流体通道和其它结构的性质。 此外，可以使用离子注入来影响材料对诸如酸的化学物质的抗性。

公开(公告)号：US20120288637A1

公开(公告)日：2012-11-15

申请号：US13470731

申请日：2012-05-14

Applicant: Ludovic Godet ,  Christopher Hatem ,  Deepak Ramappa ,  Xianfeng Lu ,  Anthony Renau ,  Patrick Martin

Inventor： Ludovic Godet ,  Christopher Hatem ,  Deepak Ramappa ,  Xianfeng Lu ,  Anthony Renau ,  Patrick Martin

IPC: C23C14/48

CPC classification number: C23C14/48 ,  B41J2/1606 ,  H01J37/32412 ,  H01J37/32422 ,  H01J37/32623

Abstract: Methods of affecting a material's properties through the implantation of ions, such as by using a plasma processing apparatus with a plasma sheath modifier. In this way, properties such as resistance to chemicals, adhesiveness, hydrophobicity, and hydrophilicity, may be affected. These methods can be applied to a variety of technologies. In some cases, ion implantation is used in the manufacture of printer heads to reduce clogging by increasing the materials hydrophobicity. In other embodiments, MEMS and NEMS devices are produced using ion implantation to change the properties of fluid channels and other structures. In addition, ion implantation can be used to affect a material's resistance to chemicals, such as acids.

Abstract translation: 通过离子注入来影响材料性质的方法，例如通过使用具有等离子体护套改性剂的等离子体处理装置。 以这种方式，可以影响耐化学性，粘合性，疏水性和亲水性等特性。 这些方法可以应用于各种技术。 在某些情况下，离子注入用于制造打印头，以通过增加材料疏水性来减少堵塞。 在其他实施例中，使用离子注入来生产MEMS和NEMS装置，以改变流体通道和其它结构的性质。 此外，可以使用离子注入来影响材料对诸如酸的化学物质的抗性。

公开(公告)号：US08716682B2

公开(公告)日：2014-05-06

申请号：US13079369

申请日：2011-04-04

Applicant: Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson

Inventor： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson

IPC: H05H1/24

CPC classification number: H01J37/3023 ,  H01J27/024 ,  H01J37/08 ,  H01J37/3172 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32752 ,  H01J2237/31711

Abstract: An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.

Abstract translation: 离子注入系统可以包括用于提供等离子体的等离子体源和被布置成接收相对于等离子体的偏置的工件夹持器，以将等离子体护套上的离子吸引到衬底。 该系统还可以包括提取板装置，其包括多个不同的孔，每个孔被布置成提供具有分布在工件上的入射角范围上的离子的离子束，其中从第一孔提取的第一离子束具有第一束 轮廓与从第二孔提取的第二离子束不同。

公开(公告)号：US20120248328A1

公开(公告)日：2012-10-04

申请号：US13079369

申请日：2011-04-04

Applicant: Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson

Inventor： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson

IPC: H01J3/14 ,  G21G5/00

CPC classification number: H01J37/3023 ,  H01J27/024 ,  H01J37/08 ,  H01J37/3172 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32752 ,  H01J2237/31711

Abstract: An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.

Abstract translation: 离子注入系统可以包括用于提供等离子体的等离子体源和被布置成接收相对于等离子体的偏置的工件夹持器，以将等离子体护套上的离子吸引到衬底。 该系统还可以包括提取板装置，其包括多个不同的孔，每个孔被布置成提供具有分布在工件上的入射角范围上的离子的离子束，其中从第一孔提取的第一离子束具有第一束 轮廓与从第二孔提取的第二离子束不同。

公开(公告)号：US20120175518A1

公开(公告)日：2012-07-12

申请号：US12987950

申请日：2011-01-10

Applicant: Ludovic Godet ,  Christopher J. Leavitt ,  Bon-Woong Koo ,  Anthony Renau

Inventor： Ludovic Godet ,  Christopher J. Leavitt ,  Bon-Woong Koo ,  Anthony Renau

IPC: H01J49/00

CPC classification number: H01J49/40 ,  H01J37/244 ,  H01J37/3171 ,  H01J37/32935 ,  H01J49/04 ,  H01J2237/24528 ,  H01J2237/24542

Abstract: A time-of-flight (TOF) ion sensor system for monitoring an angular distribution of ion species having an ion energy and incident on a substrate includes a drift tube wherein the ion sensor system is configured to vary an angle of the drift tube with respect to a plane of the substrate. The drift tube may have a first end configured to receive a pulse of ions from the ion species wherein heavier ions and lighter ions of the pulse of ions arrive in packets at a second end of the drift tube. An ion detector may be disposed at the second end of the ion sensor, wherein the ion detector is configured to detect the packets of ions derived from the pulse of ions and corresponding to respective different ion masses.

Abstract translation: 用于监测具有离子能并入射在衬底上的离子种类的角分布的飞行时间（TOF）离子传感器系统包括漂移管，其中离子传感器系统被配置为相对于漂移管的角度改变 到基板的平面。 漂移管可以具有构造成从离子物质接收离子脉冲的第一端，其中离子脉冲的较重离子和较轻离子在漂移管的第二端处分组到达。 离子检测器可以设置在离子传感器的第二端处，其中离子检测器被配置为检测源自离子脉冲的离子的分组并且对应于各个不同的离子质量。

公开(公告)号：US08664098B2

公开(公告)日：2014-03-04

申请号：US13353993

申请日：2012-01-19

Applicant: Ludovic Godet ,  Timothy J. Miller ,  Svetlana B. Radovanov ,  Anthony Renau ,  Vikram Singh

Inventor： Ludovic Godet ,  Timothy J. Miller ,  Svetlana B. Radovanov ,  Anthony Renau ,  Vikram Singh

IPC: H01L21/26 ,  C23F1/00 ,  C23C16/00 ,  H01L21/3065

CPC classification number: H01J37/32623 ,  C23C14/48

Abstract: A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate a plasma in the process chamber, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.

Abstract translation: 等离子体处理装置包括处理室，用于支撑工件的压板，被配置为在处理室中产生等离子体的源和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。

公开(公告)号：US08461030B2

公开(公告)日：2013-06-11

申请号：US12947078

申请日：2010-11-16

Applicant: Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Deepak A. Ramappa ,  Russell J. Low ,  Atul Gupta ,  Kevin M. Daniels

Inventor： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Deepak A. Ramappa ,  Russell J. Low ,  Atul Gupta ,  Kevin M. Daniels

IPC: H01L21/26 ,  H01L21/42

CPC classification number: B01J19/081 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J2237/0453 ,  H01J2237/1205 ,  H01L21/2236 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/08 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.

公开(公告)号：US08101510B2

公开(公告)日：2012-01-24

申请号：US12644103

申请日：2009-12-22

Applicant: Ludovic Godet ,  Timothy Miller ,  Svetlana Radovanov ,  Anthony Renau ,  Vikram Singh

Inventor： Ludovic Godet ,  Timothy Miller ,  Svetlana Radovanov ,  Anthony Renau ,  Vikram Singh

IPC: H01L21/26 ,  H01L21/3065 ,  C23F1/00 ,  C23C16/00

CPC classification number: H01J37/32623 ,  C23C14/48

Abstract: A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.

Abstract translation: 等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。