公开(公告)号：US5789931A

公开(公告)日：1998-08-04

申请号：US539182

申请日：1995-10-04

申请人： Jerry R. Meyer ,  Craig A. Hoffman ,  Filbert J. Bartoli ,  Jaroslaw Antoszewski ,  Lorenzo Faraone

发明人： Jerry R. Meyer ,  Craig A. Hoffman ,  Filbert J. Bartoli ,  Jaroslaw Antoszewski ,  Lorenzo Faraone

IPC分类号： G01R31/26 ,  G01R33/12

CPC分类号： G01R31/2648 ,  G01R33/1253

摘要： A method and apparatus for producing the conductivity-mobility spectrum of an isotropic semiconductor material, and hence infer the mobility and concentration of carriers in the material. Hall voltage and material conductivity are measured at a plurality of magnetic field strengths, values of the spectrum estimated for each field strength, and the estimates numerically iterated to produce convergent values for the spectrum. In one embodiment, interim selected values of the spectrum are prevented from going negative, which increases the precision of the ultimate convergent values. In another embodiment, the iteration equations employ damping factors to prevent over-correction from one iteration to the next, thus preventing convergent instabilities. The preferred iteration is the Gauss-Seidel recursion.

摘要翻译： 一种用于产生各向同性半导体材料的导电迁移率光谱的方法和装置，因此推断材料中载流子的迁移率和浓度。 在多个磁场强度下测量霍尔电压和材料电导率，为每个场强估计的频谱的值，以及数值迭代的估计值以产生频谱的收敛值。 在一个实施例中，频谱的临时选择值被阻止为负，这增加了最终收敛值的精度。 在另一个实施例中，迭代方程使用阻尼因子来防止从一次迭代到下一次迭代的过度校正，从而防止会聚不稳定性。 优选的迭代是高斯塞德递归。

公开(公告)号：US20120218559A1

公开(公告)日：2012-08-30

申请号：US13035374

申请日：2011-02-25

申请人： John Marcel Dell ,  Mariusz Martyniuk ,  Adrian John Keating ,  Gino Michael Putrino ,  Lorenzo Faraone

发明人： John Marcel Dell ,  Mariusz Martyniuk ,  Adrian John Keating ,  Gino Michael Putrino ,  Lorenzo Faraone

IPC分类号： G01B9/02

CPC分类号： G01N29/022 ,  G01N29/036 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0427

摘要： An apparatus for detecting a presence of one or more analytes in a sample. The apparatus comprises a cantilever (205) and a grating coupled resonating structure (210). The cantilever (205) comprises an analyte selective coating that is selective to the one or more analytes. The grating coupled resonating structure (210) is positioned adjacent to the cantilever (205). The first grating coupled resonating structure comprises a first interrogating grating coupler (220) which together with the cantilever forms an optical resonant cavity.

摘要翻译： 一种用于检测样品中一种或多种分析物的存在的装置。 该装置包括悬臂（205）和光栅耦合的谐振结构（210）。 悬臂（205）包括对一种或多种分析物具有选择性的分析物选择性涂层。 光栅耦合谐振结构（210）邻近悬臂（205）定位。 第一光栅耦合谐振结构包括与悬臂一起形成光谐振腔的第一询问光栅耦合器（220）。

公开(公告)号：US20060118721A1

公开(公告)日：2006-06-08

申请号：US10524140

申请日：2003-08-13

申请人： Jarek Antoszewski ,  John Dell ,  Lorenzo Faraone ,  Charles Musca ,  Kevin Winchester

发明人： Jarek Antoszewski ,  John Dell ,  Lorenzo Faraone ,  Charles Musca ,  Kevin Winchester

IPC分类号： H01L27/14

CPC分类号： G01J3/02 ,  G01J3/0256 ,  G01J3/26 ,  G02B26/001 ,  H01L31/02327 ,  H01L31/02966 ,  H01L31/1013 ,  H01L31/1032

摘要： A detector device (75) for detecting incident radiation at particular wavelengths is disclosed. The device (75) includes a base layer comprising a substrate (77). A resonant cavity is formed on the base layer between a pair of reflectors. One reflector is formed by a first reflector layer (83) disposed in fixed relationship with respect to the base layer and the other reflector is formed by a second reflector layer (91) disposed on a membrane (89) in substantially parallel relationship to the substrate (77). A detector (79) is provided within the cavity to absorb incident radiation therein for detection purposes. By placing the absorbing layer of the detector (79) within the resonant cavity, high quantum efficiency can be achieved using very thin absorbing layers, thus significantly reducing the detector volume and hence noise. Various different arrangements of the detector device (75) and different methods of fabricating the same are also disclosed.

摘要翻译： 公开了用于检测特定波长的入射辐射的检测器装置（75）。 该装置（75）包括一个包括基底（77）的基层。 在一对反射器之间的基底层上形成谐振腔。 一个反射器由相对于基底层固定关系设置的第一反射器层（83）形成，而另一个反射器由设置在膜（89）上的与基底基本平行的第二反射层（91）形成 （77）。 在腔内提供检测器（79）以吸收其中的入射辐射用于检测目的。 通过将检测器（79）的吸收层放置在谐振腔内，可以使用非常薄的吸收层实现高量子效率，从而显着降低检测器体积，从而显着降低噪声。 还公开了检测器装置（75）的各种不同布置及其制造方法。

公开(公告)号：US20050226281A1

公开(公告)日：2005-10-13

申请号：US10507015

申请日：2003-03-10

申请人： Lorenzo Faraone ,  John Dell ,  Charles Musca ,  Jarek Antoszewski ,  Kevin Winchester

发明人： Lorenzo Faraone ,  John Dell ,  Charles Musca ,  Jarek Antoszewski ,  Kevin Winchester

IPC分类号： G02B26/00 ,  H01S3/08 ,  H01S3/10

CPC分类号： G02B26/001 ,  G01J3/26 ,  H01S3/08059 ,  H01S3/105

摘要： A tunable cavity resonator for filtering radiation in the optical and IR wavelengths and a method for fabricating same. The resonator having a pair of reflectors, one in fixed relationship to a substrate and the other formed upon a suspended moveable membrane disposed a cavity length from the one reflector. The resonator also including a pair of spaced apart electrodes either constituted by the reflectors or juxtaposed therewith, which are electrostatically operable to move the membrane and other reflector relative to the one reflector. A first reflector layer is deposited on the substrate to form the one reflector. A sacrificial layer having a high etch selectivity for releasing the membrane in a suspended and spaced relationship from the one reflector is formed on the first reflector layer. The membrane is deposited on the sacrificial layer using a deposition technique characterised by providing the required intrinsic stress in the membrane. A second reflector layer is formed on the membrane to form the other reflector. The second reflector layer is patterned in accordance with a prescribed membrane geometry and then etched to achieve the same. The sacrificial layer is then initially etched to remove regions thereof down to the first reflector layer on the substrate exposed by the etching. Those regions of the sacrificial layer that are intended to function as the residual support structure of the membrane are then protected with photoresist and the remaining unprotected regions of the sacrificial layer are finally etched, removing the protection from the support structures to suspend the membrane in substantially parallel relation to the first reflector layer.

摘要翻译： 用于对光和IR波长的辐射进行滤波的可调谐腔谐振器及其制造方法。 谐振器具有一对反射器，一个与基板固定，另一个反射器形成在悬挂的可移动膜上，其设置有来自该反射器的腔长度。 谐振器还包括由反射器构成或与之并置的一对间隔开的电极，其可静电操作以相对于一个反射器移动膜和其它反射器。 第一反射器层沉积在基板上以形成一个反射器。 在第一反射器层上形成具有高的蚀刻选择性的牺牲层，用于以与悬臂间隔的关系释放膜。 使用沉积技术将膜沉积在牺牲层上，其特征在于在膜中提供所需的内在应力。 在膜上形成第二反射层以形成另一个反射器。 根据规定的膜几何形状对第二反射器层进行图案化，然后蚀刻以实现其。 然后最初蚀刻牺牲层以将其区域向下移动到通过蚀刻暴露的衬底上的第一反射器层。 旨在用作膜的残余支撑结构的牺牲层的那些区域然后用光致抗蚀剂保护，并且最终蚀刻牺牲层的剩余的未保护区域，从支撑结构去除保护以将膜悬浮在基本上 与第一反射层平行的关系。

公开(公告)号：US08649018B2

公开(公告)日：2014-02-11

申请号：US13035374

申请日：2011-02-25

申请人： John Marcel Dell ,  Mariusz Martyniuk ,  Adrian John Keating ,  Gino Michael Putrino ,  Lorenzo Faraone

发明人： John Marcel Dell ,  Mariusz Martyniuk ,  Adrian John Keating ,  Gino Michael Putrino ,  Lorenzo Faraone

IPC分类号： G01B9/02

CPC分类号： G01N29/022 ,  G01N29/036 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0427

摘要： An apparatus for detecting a presence of one or more analytes in a sample. The apparatus comprises a cantilever (205) and a grating coupled resonating structure (210). The cantilever (205) comprises an analyte selective coating that is selective to the one or more analytes. The grating coupled resonating structure (210) is positioned adjacent to the cantilever (205). The first grating coupled resonating structure comprises a first interrogating grating coupler (220) which together with the cantilever forms an optical resonant cavity.

摘要翻译： 一种用于检测样品中一种或多种分析物的存在的装置。 该装置包括悬臂（205）和光栅耦合的谐振结构（210）。 悬臂（205）包括对一种或多种分析物具有选择性的分析物选择性涂层。 光栅耦合谐振结构（210）邻近悬臂（205）定位。 第一光栅耦合谐振结构包括与悬臂一起形成光谐振腔的第一询问光栅耦合器（220）。

公开(公告)号：US08003427B2

公开(公告)日：2011-08-23

申请号：US12153412

申请日：2008-05-19

申请人： Lorenzo Faraone ,  John Marcel Dell ,  Charles Anthony Musca ,  Jarek Antoszewski ,  Kevin James Winchester

发明人： Lorenzo Faraone ,  John Marcel Dell ,  Charles Anthony Musca ,  Jarek Antoszewski ,  Kevin James Winchester

IPC分类号： H01L21/00

CPC分类号： G02B26/001 ,  G01J3/26 ,  H01S3/08059 ,  H01S3/105

摘要： An example tunable cavity resonator for filtering radiation in the optical and IR wavelengths and an example method for fabricating same. The example resonator includes a pair of reflectors, one in fixed relationship to a substrate and the other formed upon a suspended moveable membrane disposed a cavity length from the one reflector. The resonator also includes a pair of spaced apart electrodes either constituted by the reflectors or juxtaposed therewith, which are electrostatically operable to move the membrane and other reflector relative to the one reflector.

摘要翻译： 用于对光学和红外波长的辐射进行滤波的示例性可调谐空腔谐振器及其制造方法。 示例性谐振器包括一对反射器，其一个与基板固定，另一个反射器形成在悬挂的可移动膜上，其设置有来自该反射器的腔长度。 谐振器还包括由反射器构成或与其并置的一对间隔开的电极，其可静电操作以相对于一个反射器移动膜和其它反射器。

公开(公告)号：US6100704A

公开(公告)日：2000-08-08

申请号：US69945

申请日：1998-04-30

申请人： Jerry R. Meyer ,  Igor Vurgaftman ,  David Redfern ,  Jaroslav Antoszewski ,  Lorenzo Faraone ,  Jeffrey R. Lindenmuth

发明人： Jerry R. Meyer ,  Igor Vurgaftman ,  David Redfern ,  Jaroslav Antoszewski ,  Lorenzo Faraone ,  Jeffrey R. Lindenmuth

IPC分类号： G01R31/26

CPC分类号： G01R31/2648

摘要： The present invention is a method for determining a carrier conductivity-rier mobility spectrum for a semiconductor sample, having the steps of: exposing the semiconductor sample to a range K of discrete magnetic fields k=1,2, . . . K; for each field obtaining a Hall coefficient R.sub.H and a resistivity .rho., and calculating from R.sub.H (B.sub.k) and .sigma.(B.sub.k) experimental conductivity tensor components .sigma..sub.xx.sup.k (exp) and .sigma..sub.xy.sup.k (exp), and slopes of these conductivity tensor components .sigma.'.sub.xx.sup.k (exp) and .sigma.'.sub.xy.sup.k (exp); selecting a trial carrier conductivity-carrier mobility spectrum s.sub.i corresponding to a plurality I of carrier mobilities .mu..sub.i, i=1,2, . . . I; for each B.sub.j, using this trial carrier conductivity-carrier mobility spectrum to calculate conductivity tensor components .sigma..sub.xx.sup.j and .sigma..sub.xy.sup.j, and slopes of the conductivity tensor components .sigma.'.sub.xx.sup.j and .sigma.'.sub.xy.sup.j ; for each B.sub.j, calculating errors .DELTA..sub.xx.sup.j .ident..sigma..sub.xx.sup.j (exp)-.sigma..sub.xx.sup.j, .DELTA..sub.xy.sup.j .ident..sigma..sub.xy.sup.j (exp)-.sigma..sub.xy.sup.j, .DELTA.'.sub.xx.sup.j (exp)-.sigma.'.sub.xx.sup.j, and .DELTA.'.sub.xy.sup.j .ident..sigma.'.sub.xy.sup.j (exp)-.sigma.'.sub.xy.sup.j, and calculating therefrom a total weighted squared error .chi..sub.j.sup.2 ; for each B.sub.j and at least a subset of .mu..sub.i, calculating an optimum change to said trial carrier conductivity-carrier mobility spectrum .delta.s.sub.ij, and calculating therefrom a modified total weighted squared error .chi..sub.ij.sup.2 ; for each B.sub.j, determining a minimum carrier mobility point .mu..sub.iminj whose corresponding change .delta.s.sub.ij that yields the lowest weighted squared error .chi..sub.ij.sup.2 ; for each B.sub.j and at least a subset of .mu..sub.i, changing the carrier conductivity-carrier mobility spectrum by not more than .delta.s.sub.ij.

摘要翻译： 本发明是用于确定半导体样品的载流子传导率 - 载流子迁移率谱的方法，具有以下步骤：将半导体样品暴露于离散磁场k = 1,2的范围K。 。 。 K; 对于每个场获得霍尔系数RH和电阻率rho，并且从RH（Bk）和西格马（Bk）实验电导率张量分量sigma xxk（exp）和sigma xyk（exp）计算，并且这些电导率张量分量sigma' xxk（exp）和sigma'xyk（exp）; 选择对应于载波移动性的多个I，i = 1,2的试验载波电导率 - 载流子迁移率谱si。 。 。 一世; 对于每个Bj，使用该试验载体电导率 - 载流子迁移率谱来计算电导率张量分量sigma xxj和sigma xyj，以及电导率张量分量sigma'xxj和sigma'xyj的斜率; 对于每个Bj，计算误差DELTA xxj = sigma xxj（exp） - sigma xxj，DELTA xyj = sigma xyj（exp） - sigma xyj，DELTA'xxj（exp） - sigma'xxj和DELTA'xyj = sigma'xyj exp）-σ'xyj，并从其计算总加权平方误差chi j2; 对于每个Bj和至少一个mu i的子集，计算对所述试验载波电导率 - 载波移动频谱δsij的最佳改变，并从其计算修改的总加权平方误差chi ij2; 对于每个Bj，确定最小载波移动点mu iminj，其对应的变化Δsij产生最低加权平方误差chi ij2; 对于每个Bj和至少一个μi的子集，将载波电导率 - 载流子迁移谱改变不超过δsij。

公开(公告)号：US4757360A

公开(公告)日：1988-07-12

申请号：US511250

申请日：1983-07-06

申请人： Lorenzo Faraone

发明人： Lorenzo Faraone

IPC分类号： H01L21/8247 ,  H01L29/788 ,  H01L29/792 ,  H01L29/78 ,  G11C11/40

CPC分类号： H01L29/7883 ,  Y10S257/90

摘要： A floating gate memory device includes a substrate of semiconductor material having on a surface thereof a layer of insulating material. On the insulating layer is a floating gate of conductive polycrystalline silicon with the floating gate having a textured outer surface and relatively smoother sidewalls. A second layer of insulating material extends over the outer surface and sidewalls of the floating gate. The portion of the second insulating material over the outer surface of the floating gate has a textured surface and is thinner than the portions of the second insulating layer over the sidewalls of the floating gate. A control gate is over the second insulating layer and extends over the outer surface and sidewalls of the floating gate. The control gate is of conductive polycrystalline silicon and has an inner surface portion over the textured outer surface of the control gate which is textured and has undulations which substantially follow the undulations of the textured surface of the floating gate.

摘要翻译： 浮栅存储器件包括半导体材料的衬底，其表面上具有绝缘材料层。 在绝缘层上是导电多晶硅的浮动栅极，浮动栅极具有织构化的外表面和相对平滑的侧壁。 第二层绝缘材料在浮动栅极的外表面和侧壁上延伸。 第二绝缘材料在浮动栅极的外表面上的部分具有纹理表面，并且比浮置栅极的侧壁上的第二绝缘层的部分更薄。 控制栅极在第二绝缘层上方并且在浮动栅极的外表面和侧壁上延伸。 控制栅极是导电多晶硅，并且在控制栅极的织构化外表面上具有纹理化的纹理外表面部分，并且具有基本上跟随浮栅的纹理化表面的起伏的起伏。

公开(公告)号：US4683640A

公开(公告)日：1987-08-04

申请号：US852215

申请日：1986-04-15

申请人： Lorenzo Faraone

发明人： Lorenzo Faraone

IPC分类号： H01L21/28 ,  H01L21/441 ,  H01L21/425

CPC分类号： H01L21/28273

摘要： A method of making a floating gate memory cell wherein the capacitance between the control gate and floating gate can be independently controlled. Independent capacitance control is achieved by forming the inter-level dielectric in a step which is independent of the gate oxide growth process.

摘要翻译： 一种制造浮动栅极存储单元的方法，其中可以独立地控制控制栅极和浮置栅极之间的电容。 通过在独立于栅极氧化物生长过程的步骤中形成层间电介质来实现独立电容控制。

公开(公告)号：US4604304A

公开(公告)日：1986-08-05

申请号：US751680

申请日：1985-07-03

申请人： Lorenzo Faraone ,  David L. Patterson

发明人： Lorenzo Faraone ,  David L. Patterson

IPC分类号： C23C8/10 ,  C23C16/40 ,  H01L21/316 ,  H01L21/321

CPC分类号： H01L21/02238 ,  C23C16/402 ,  C23C8/10 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/32105 ,  Y10S148/081 ,  Y10S148/118

摘要： An improvement in the formation of thick, i.e. 1,200 nanometers and greater, layers of silicon dioxide on a substrate is provided. The silicon dioxide layer is provided by the alternate deposition and oxidation of thin layers of silicon. In comparison to conventional oxidation, the time required for formation of a thick layer of silicon dioxide in accordance with the disclosed process is substantially reduced.

摘要翻译： 提供了在衬底上形成厚的，即1,200纳米和更大的二氧化硅层的改进。 二氧化硅层通过硅薄层的交替沉积和氧化来提供。 与常规氧化相比，根据所公开的方法形成厚二氧化硅所需的时间显着降低。