摘要:
Disclosed is a power calculation method of a magnetic circuit. In view of the power problem of a magnetic circuit and the phase problem of a magnetomotive force (MMF) and a magnetic flux in the magnetic circuit, the present disclosure draws a magnetic circuit vector diagram based on an equivalent magnetic circuit vector model, and provides a method for calculating virtual magnetic active power, virtual magnetic reactive power, and virtual magnetic complex power of the magnetic circuit by analyzing the MMF, the magnetic flux, the reluctance, and the magnetic reactance in the magnetic circuit by using the magnetic circuit vector diagram. A mathematical relationship between the virtual magnetic power of the magnetic circuit and the electric power of the corresponding equivalent electric circuit is derived according to a conversion factor between the virtual magnetic power and the electric power, so that the electric power can be directly calculated according to magnetic parameters such as the MMF and the magnetic flux in the magnetic circuit. The power calculation method of the magnetic circuit provided in the present disclosure can calculate and analyze the virtual magnetic power of the magnetic circuit according to the magnetic circuit vectors, so as to calculate the electric power from the magnetic circuit through conversion. The electric power can be solved according to the magnetic circuit vectors directly when the electric vectors are not available to calculate electric power in electromagnetic components.
摘要:
A method for determining a two-dimensional spectrum of a specified carrier having a specified mobility and density in a material of an electronic device, the method including performing a magnetic field-dependent Hall measurement on the material of the electronic device; determining, using the magnetic field-dependent Hall measurement, a probability density function of a conductance of the material of the electronic device, wherein the probability density function describes a spectrum of a plurality of m-carriers, wherein the plurality of m-carriers includes the specified carrier having the specified mobility and density; and determining an electrical transport of a plurality of electrons and holes inside the material of the electronic device by observing a variation of the probability density function with any of the specified mobility and density of the specified carrier.
摘要:
Ferromagnetic Group III-V semiconductor/non-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.
摘要:
The present device relates to a sensor capable of detecting changes in the electromagnetic field it generates when in proximity to either conductive or nonconductive materials. This occurs by way of oscillating a transmit coil with an electro motive force at a resonant frequency thus creating an electromagnetic field. The magnetic field passes through a target of either conductive or nonconductive material and is then intercepted by a receive coil which likewise oscillates at a resonant frequency, which when in proximity to the transmit coil and transmit coils resonant frequency produces an enhanced signal by way of the interaction of the respective resonant frequencies and receive coil output.
摘要:
Method and system for estimating a concentration of free electrons with a selected spin polarization in a semiconductor material. A static magnetic field and an electromagnetic field are impressed on the semiconductor, and free electrons are injected (through diffusion or tunneling) into the semiconductor material from a ferromagnetic material. Motion of the injected, spin-polarized electrons, within the semiconductor gives rise to a Hall voltage across the semiconductor. This voltage is measured at one or more spaced apart locations and analyzed to detect presence of, and estimate a concentration of, free electrons with a selected spin at at least one location within the semiconductor. Effects of an imposed stress, temperature, illumination or electromagnetic field on the semiconductor can be determined.
摘要:
A measurement apparatus includes an Epstein frame, an alternating power supply, a power analyzer, and an oscilloscope. Electromagnetic coupling modeling on an Epstein frame is performed based on a vector model of a magnetic circuit, where an iron core of the Epstein frame is formed by laminating a silicon steel sheet to be measured, and an excitation coil and a detection coil with the same turns number are wound around the iron core. The measurement process is to first obtain a reference B-H curve that only considers a nonlinear reluctance of the iron core, and then to derive a B-H curve considering an eddy current effect in a magnetic field at any frequency from the reference B-H curve. The method, applicable to a measurement for B-H curves at middle and high frequencies, may obtain much higher accuracy.
摘要:
The present device relates to a sensor capable of detecting changes in the electromagnetic field it generates when in proximity to either conductive or nonconductive materials. This occurs by way of oscillating a transmit coil with an electro motive force at a resonant frequency thus creating an electromagnetic field. The magnetic field passes through a target of either conductive or nonconductive material and is then intercepted by a receive coil which likewise oscillates at a resonant frequency, which when in proximity to the transmit coil and transmit coils resonant frequency produces an enhanced signal by way of the interaction of the respective resonant frequencies and receive coil output.
摘要:
Methods of use of ferromagnetic Group III-V semiconductor/non-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.
摘要:
A continuous observation apparatus of magnetic flux distribution in which a long sample containing a superconducting material or magnetic material is transferred to an observation position and magnetic flux is observed sequentially at each of certain areas along a longitudinal direction of the sample is provided. A method of continuously observing magnetic flux by which a long sample containing a superconducting material or magnetic material is transferred to an observation position and magnetic flux is observed sequentially at each of certain areas along a longitudinal direction of the sample is also provided.
摘要:
Disclosed are apparatus and method for measuring Hall effect related-values in a semiconductor, such as a mobility, a carrier concentration and a resistivity using a Hall effect. A sample is loaded into an IC socket or a similar target, which is fixed on the inside of a heat insulating material container capable of containing injected liquid nitrogen. The Hall effect related-values are measured using a moving member for moving a pair of permanent magnets to an outside of the heat insulating material container. The measuring equipment has a simple structure, and a measuring operation is simple. A level of an input voltage of a sample is measured depending on a constant current that is supplied by a constant current supplying unit contained in a Hall voltage measurement unit. A measurement error detection unit detects and displays a measurement error of the sample using the level of the measured input voltage. Since the measurement error is detected before measuring the Hall effect, the measurement error can be excluded.