公开(公告)号：US06514850B2

公开(公告)日：2003-02-04

申请号：US09775010

申请日：2001-01-31

Applicant: Li-Qun Xia ,  Huong Thanh Nguyen ,  Ellie Yieh ,  Dan Maydan

Inventor： Li-Qun Xia ,  Huong Thanh Nguyen ,  Ellie Yieh ,  Dan Maydan

IPC: H01L214763

CPC classification number: H01L21/76829 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/3144 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76826

Abstract: Methods of forming an interface in a dielectric material to act as an indicator for terminating an etching process, and products produced thereby.

公开(公告)号：US20050158667A1

公开(公告)日：2005-07-21

申请号：US10761122

申请日：2004-01-20

Applicant: Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul Naik ,  Li-Qun Xia ,  Ellie Yieh

Inventor： Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul Naik ,  Li-Qun Xia ,  Ellie Yieh

IPC: G03F7/00 ,  G03F7/36 ,  G03F7/42 ,  H01L21/02 ,  H01L21/311

CPC classification number: G03F7/427 ,  H01L21/02063 ,  H01L21/31138

Abstract: A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.

Abstract translation: 可以通过氢和水等离子体混合物去除光致抗蚀剂或光致抗蚀剂的残余物。 该方法可以在约150℃至约450℃，优选约250℃的温度范围和约500W至约3000W，优选约1400W的功率范围内进行。

公开(公告)号：US06680164B2

公开(公告)日：2004-01-20

申请号：US10006563

申请日：2001-11-30

Applicant: Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul B. Naik ,  Li-Qun Xia ,  Ellie Yieh

Inventor： Huong Thanh Nguyen ,  Mark Naoshi Kawaguchi ,  Mehul B. Naik ,  Li-Qun Xia ,  Ellie Yieh

IPC: G03F742

CPC classification number: H01L21/02063 ,  G03F7/427 ,  H01L21/31138

Abstract: A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.

Abstract translation: 可以通过氢和水等离子体混合物去除光致抗蚀剂或光致抗蚀剂的残余物。 该方法可以在约150℃至约450℃，优选约250℃的温度范围和约500W至约3000W，优选约1400W的功率范围内进行。

公开(公告)号：US06569257B1

公开(公告)日：2003-05-27

申请号：US09710357

申请日：2000-11-09

Applicant: Huong Thanh Nguyen ,  Michael Barnes ,  Li-Qun Xia ,  Ellie Yieh

Inventor： Huong Thanh Nguyen ,  Michael Barnes ,  Li-Qun Xia ,  Ellie Yieh

IPC: B08B300

CPC classification number: H01J37/32862 ,  C23C16/4405

Abstract: A method for cleaning silicon carbide and/or organosilicate layers from interior surfaces of a process chamber is disclosed. In one aspect, silicon carbide and/or organosilicate layers are cleaned from interior surfaces of a process chamber by treating it with a hydrogen/fluorine-based plasma. In another aspect, silicon carbide and/or organosilicate layer are cleaned from interior surfaces of the process chamber by treating it with a hydrogen-based plasma followed by a fluorine-based plasma. Alternatively, silicon carbide and/or organosilicate layers are cleaned from interior surfaces of the chamber by treating it with a fluorine-based plasma followed by a hydrogen-based plasma.

Abstract translation: 公开了一种从处理室的内表面清洁碳化硅和/或有机硅酸盐层的方法。 在一个方面，通过用氢/氟基等离子体处理碳化硅和/或有机硅酸盐层，从处理室的内表面清洗。 另一方面，通过用基于氢的等离子体处理它，随后用氟基等离子体处理碳化硅和/或有机硅酸盐层，从处理室的内表面清洗。 或者，通过用氟基等离子体处理，然后用氢基等离子体来清洗碳化硅和/或有机硅酸盐层，从室的内表面清洗。

公开(公告)号：US06511920B2

公开(公告)日：2003-01-28

申请号：US09882111

申请日：2001-06-14

Applicant: Huong Thanh Nguyen ,  Yunsang Kim ,  Ellie Yieh ,  Li-Qun Xia

Inventor： Huong Thanh Nguyen ,  Yunsang Kim ,  Ellie Yieh ,  Li-Qun Xia

IPC: H01L2131

CPC classification number: H01L21/76832 ,  H01L21/76813 ,  H01L21/76826 ,  H01L21/76829 ,  H01L22/24 ,  Y10S438/931

Abstract: A method of forming an optical marker layer for etch endpoint determination in integrated circuit fabrication processes is disclosed. The optical marker layer is used in conjunction with organic and/or carbon-containing material layers that are used as bulk insulating materials and barrier materials. The optical marker layer is formed on the bulk insulating material layer and/or the barrier material layer by incorporating an optical marker into the surface thereof. The optical marker is incorporated into the surface of the bulk insulating material layer and/or the barrier material layer by treating such layer with an optical marker-containing gas. The optical marker layer provides an optical marker emission spectrum when it is etched during a subsequent patterning step.

Abstract translation: 公开了一种在集成电路制造工艺中形成用于蚀刻端点确定的光学标记层的方法。 光学标记层与用作体绝缘材料和阻隔材料的有机和/或含碳材料层结合使用。 通过在其表面上并入光学标记物，在体绝缘材料层和/或阻挡材料层上形成光学标记层。 通过用含有光学标记的气体处理该层，将光学标记物结合到体绝缘材料层和/或阻挡材料层的表面中。 当在随后的图案化步骤中蚀刻时，光学标记层提供光学标记发射光谱。

公开(公告)号：US20080132087A1

公开(公告)日：2008-06-05

申请号：US12013232

申请日：2008-01-11

Applicant: Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

Inventor： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

IPC: H01L21/31

CPC classification number: H01L21/02126 ,  C23C16/0218 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02071 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3146 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76837 ,  Y10S438/931

Abstract: A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

Abstract translation: 一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。 该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。 致密化通常在还原环境中进行，同时加热基底。 致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

公开(公告)号：US07160821B2

公开(公告)日：2007-01-09

申请号：US10765361

申请日：2004-01-27

Applicant: Tzu-Fang Huang ,  Yung-Cheng Lu ,  Li-Qun Xia ,  Ellie Yieh ,  Wai-Fan Yau ,  David W. Cheung ,  Ralf B. Willecke ,  Kuowei Liu ,  Ju-Hyung Lee ,  Farhad K. Moghadam ,  Yeming Jim Ma

Inventor： Tzu-Fang Huang ,  Yung-Cheng Lu ,  Li-Qun Xia ,  Ellie Yieh ,  Wai-Fan Yau ,  David W. Cheung ,  Ralf B. Willecke ,  Kuowei Liu ,  Ju-Hyung Lee ,  Farhad K. Moghadam ,  Yeming Jim Ma

IPC: H01L21/02 ,  H01L21/469

CPC classification number: H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76829 ,  H01L21/76835 ,  H01L2221/1031

Abstract: A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.

Abstract translation: 氧化硅层通过有机硅化合物的等离子体增强分解产生，以沉积碳原子量至少为1％的膜。 可以引入任选的载气，以便以小于或等于有机硅化合物的流速的流速促进沉积过程。 可以通过暂时增加有机硅化合物的氧化而在氧化硅层附近形成富氧表面。

公开(公告)号：US07074708B2

公开(公告)日：2006-07-11

申请号：US10789209

申请日：2004-02-27

Applicant: Frederic Gaillard ,  Li-Qun Xia ,  Tian-Hoe Lim ,  Ellie Yieh ,  Wai-Fan Yau ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Lu

Inventor： Frederic Gaillard ,  Li-Qun Xia ,  Tian-Hoe Lim ,  Ellie Yieh ,  Wai-Fan Yau ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Lu

IPC: H01L21/4763

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/314 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76828

Abstract: A method for processing a substrate including depositing a dielectric layer containing silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.

Abstract translation: 一种用于处理衬底的方法，包括通过化学气相沉积在衬底上沉积含有硅，氧和碳的电介质层，其中所述电介质层的碳含量至少为原子量的1％，介电常数小于约 并且在电介质层上沉积含硅和碳的层。 通过使烷基硅烷在相对惰性气体的等离子体中反应而进一步沉积非晶质氢化碳化硅层，沉积了具有三个或更多个甲基的有机硅化合物沉积的电介质层的介电常数显着降低。

公开(公告)号：US06936309B2

公开(公告)日：2005-08-30

申请号：US10115832

申请日：2002-04-02

Applicant: Lihua Li ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Ellie Yieh

Inventor： Lihua Li ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Ellie Yieh

IPC: C23C16/40 ,  C23C16/56 ,  H01L21/316 ,  C08J7/18 ,  B05D3/06 ,  C08F2/52 ,  H05H1/46

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31633

Abstract: A method for depositing a low dielectric constant film having an improved hardness and elastic modulus is provided. In one aspect, the method comprises depositing a low dielectric constant film having silicon, carbon, and hydrogen, and then treating the deposited film with a plasma of helium, hydrogen, or a mixture thereof at conditions sufficient to increase the hardness of the film.

Abstract translation: 提供了一种沉积具有改进的硬度和弹性模量的低介电常数膜的方法。 一方面，该方法包括沉积具有硅，碳和氢的低介电常数膜，然后在足以提高膜硬度的条件下用氦，氢或其混合物的等离子体处理沉积膜。

公开(公告)号：US06890850B2

公开(公告)日：2005-05-10

申请号：US10196498

申请日：2002-07-15

Applicant: Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

Inventor： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

IPC: C23C16/42 ,  C23C16/30 ,  C23C16/40 ,  C23C16/56 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

Abstract: Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

Abstract translation: 提供了用于沉积氧掺杂介电层的方法。 氧掺杂介电层可用于阻挡层或硬掩模。 在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理 并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。 氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。