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公开(公告)号：US10018996B2
公开(公告)日：2018-07-10
申请号：US12692000
申请日：2010-01-22
申请人： Lars Bomholt , Jim Chalmers , Wolfgang Fichtner
发明人： Lars Bomholt , Jim Chalmers , Wolfgang Fichtner
IPC分类号： G06G7/48 , G05B19/418 , G06F17/50 , G03F7/20
CPC分类号： G05B19/41885 , G03F7/705 , G05B2219/32017 , G05B2219/45031 , G06F17/5009 , G06F2217/80 , Y02P90/26 , Y02P90/265
摘要： Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.
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公开(公告)号：US08090464B2
公开(公告)日：2012-01-03
申请号：US12208279
申请日：2008-09-10
申请人： Lars Bomholt , Jim Chalmers , Wolfgang Fichtner
发明人： Lars Bomholt , Jim Chalmers , Wolfgang Fichtner
IPC分类号： G06F19/00
CPC分类号： G05B19/41885 , G03F7/705 , G05B2219/32017 , G05B2219/45031 , G06F17/5009 , G06F2217/80 , Y02P90/26
摘要： Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.
摘要翻译： 粗略描述，通过使用TCAD和TCAD衍生的模型来增强制造过程。 开发了该过程的TCAD仿真模型，其根据多个过程输入参数预测将使用该过程制造的产品的性能参数的值。 根据过程模型确定计算的参数子集（包括过程输入参数或产品性能参数或两者）的估计值，预测值或期望值，并进一步根据实际估计值或期望值 参数子集（再次是过程输入参数或产品性能参数或两者）。 该确定优选地使用该过程的过程紧凑模型来进行，其本身根据模拟模型而开发。
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公开(公告)号：US07792595B1
公开(公告)日：2010-09-07
申请号：US11139110
申请日：2005-05-27
申请人： Lars Bomholt , Jim Chalmers , Wolfgang Fichtner
发明人： Lars Bomholt , Jim Chalmers , Wolfgang Fichtner
IPC分类号： G05B13/02
CPC分类号： G05B19/41885 , G03F7/705 , G05B2219/32017 , G05B2219/45031 , G06F17/5009 , G06F2217/80 , Y02P90/26
摘要： Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.
摘要翻译： 粗略描述，通过使用TCAD和TCAD衍生的模型来增强制造过程。 开发了该过程的TCAD仿真模型，其根据多个过程输入参数预测将使用该过程制造的产品的性能参数的值。 根据过程模型确定计算的参数子集（包括过程输入参数或产品性能参数或两者）的估计值，预测值或期望值，并进一步根据实际估计值或期望值 参数子集（再次是过程输入参数或产品性能参数或两者）。 该确定优选地使用该过程的过程紧凑模型来进行，其本身根据模拟模型而开发。
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公开(公告)号：US20100121474A1
公开(公告)日：2010-05-13
申请号：US12692000
申请日：2010-01-22
申请人： Lars Bomholt , Jim Chalmers , Wolfgang Fichtner
发明人： Lars Bomholt , Jim Chalmers , Wolfgang Fichtner
CPC分类号： G05B19/41885 , G03F7/705 , G05B2219/32017 , G05B2219/45031 , G06F17/5009 , G06F2217/80 , Y02P90/26
摘要： Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.
摘要翻译： 粗略描述，通过使用TCAD和TCAD衍生的模型来增强制造过程。 开发了该过程的TCAD仿真模型，其根据多个过程输入参数预测将使用该过程制造的产品的性能参数的值。 根据过程模型确定计算的参数子集（包括过程输入参数或产品性能参数或两者）的估计值，预测值或期望值，并进一步根据实际估计值或所需值 参数子集（再次是过程输入参数或产品性能参数或两者）。 该确定优选地使用该过程的过程紧凑模型来进行，其本身根据模拟模型而开发。
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5.发明申请公开(公告)号：US20090005894A1
公开(公告)日：2009-01-01
申请号：US12208279
申请日：2008-09-10
申请人： Lars BOMHOLT , Jim Chalmers , Wolfgang Fichtner
发明人： Lars BOMHOLT , Jim Chalmers , Wolfgang Fichtner
CPC分类号： G05B19/41885 , G03F7/705 , G05B2219/32017 , G05B2219/45031 , G06F17/5009 , G06F2217/80 , Y02P90/26
摘要： Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.
摘要翻译： 粗略描述，通过使用TCAD和TCAD衍生的模型来增强制造过程。 开发了该过程的TCAD仿真模型，其根据多个过程输入参数预测将使用该过程制造的产品的性能参数的值。 根据过程模型确定计算的参数子集（包括过程输入参数或产品性能参数或两者）的估计值，预测值或期望值，并进一步根据实际估计值或所需值 参数子集（再次是过程输入参数或产品性能参数或两者）。 该确定优选地使用该过程的过程紧凑模型来进行，其本身根据模拟模型而开发。
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公开(公告)号：US06534998B1
公开(公告)日：2003-03-18
申请号：US09716381
申请日：2000-11-21
IPC分类号： G01R3108
CPC分类号： H01L29/7395 , H03K17/08128
摘要： Disclosed is a semiconductor device capable of stabilizing a gate voltage at high voltage and high current, protecting the device from breakdown by preventing current nonuniformity and oscillations and the like, thereby improving reliability, and a method for controlling the semiconductor device. The semiconductor device comprises an n-type base layer, a p-type emitter layer, which is formed on a surface of the n-type base layer, a collector electrode, formed on a surface of the p-type emitter layer, a p-type base layer, formed on a surface on the n-type base layer which is opposite to the p-type emitter layer, an n-type source layer, formed in a surface of the p-type base layer, an emitter electrode, formed on the n-type source layer and the p-type base layer, and a gate electrode, contacting the n-type source layer, the p-type base layer and the n-type base layer, with a gate insulating film interposed therebetween, wherein when a voltage is applied between the collector electrode and the emitter electrode, the capacitance of the gate electrode is always a positive value or zero.
摘要翻译： 公开了一种能够在高电压和高电流下稳定栅极电压的半导体器件，通过防止电流不均匀性和振荡等来保护器件免于击穿，从而提高可靠性，以及用于控制半导体器件的方法。 半导体器件包括n型基极层，形成在n型基极层的表面上的p型发射极层，形成在p型发射极层的表面上的集电极，p 型基底层，形成在与p型发射极层相对的n型基底层的表面上，形成在p型基底层的表面中的n型源极层，发射极电极， 形成在n型源极层和p型基极层上的栅极电极和与n型源极层，p型基极层和n型基极层接触的栅极电极，其间插入有栅极绝缘膜 其中当在集电极和发射极之间施加电压时，栅电极的电容总是为正值或零。
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公开(公告)号：US6153896A
公开(公告)日：2000-11-28
申请号：US41792
申请日：1998-03-13
IPC分类号： H01L27/04 , H01L21/822 , H01L29/739 , H01L29/78 , H03K17/0812
CPC分类号： H01L29/7395 , H03K17/08128
摘要： Disclosed is a semiconductor device capable of stabilizing a gate voltage at high voltage and high current, protecting the device from breakdown by preventing current nonuniformity and oscillations and the like, thereby improving reliability, and a method for controlling the semiconductor device. The semiconductor device comprises an n-type base layer, a p-type emitter layer, which is formed on a surface of the n-type base layer, a collector electrode, formed on a surface of the p-type emitter layer, a p-type base layer, formed on a surface on the n-type base layer which is opposite to the p-type emitter layer, an n-type source layer, formed in a surface of the p-type base layer, an emitter electrode, formed on the n-type source layer and the p-type base layer, and a gate electrode, contacting the n-type source layer, the p-type base layer and the n-type base layer, with a gate insulating film interposed therebetween, wherein when a voltage is applied between the collector electrode and the emitter electrode, the capacitance of the gate electrode is always a positive value or zero.
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