Method and system for enhancing the yield in semiconductor manufacturing
    2.
    发明授权
    Method and system for enhancing the yield in semiconductor manufacturing 有权
    提高半导体制造产量的方法和系统

    公开(公告)号:US08090464B2

    公开(公告)日:2012-01-03

    申请号:US12208279

    申请日:2008-09-10

    IPC分类号: G06F19/00

    摘要: Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.

    摘要翻译: 粗略描述,通过使用TCAD和TCAD衍生的模型来增强制造过程。 开发了该过程的TCAD仿真模型,其根据多个过程输入参数预测将使用该过程制造的产品的性能参数的值。 根据过程模型确定计算的参数子集(包括过程输入参数或产品性能参数或两者)的估计值,预测值或期望值,并进一步根据实际估计值或期望值 参数子集(再次是过程输入参数或产品性能参数或两者)。 该确定优选地使用该过程的过程紧凑模型来进行,其本身根据模拟模型而开发。

    Method and system for enhancing the yield in semiconductor manufacturing
    3.
    发明授权
    Method and system for enhancing the yield in semiconductor manufacturing 有权
    提高半导体制造产量的方法和系统

    公开(公告)号:US07792595B1

    公开(公告)日:2010-09-07

    申请号:US11139110

    申请日:2005-05-27

    IPC分类号: G05B13/02

    摘要: Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.

    摘要翻译: 粗略描述,通过使用TCAD和TCAD衍生的模型来增强制造过程。 开发了该过程的TCAD仿真模型,其根据多个过程输入参数预测将使用该过程制造的产品的性能参数的值。 根据过程模型确定计算的参数子集(包括过程输入参数或产品性能参数或两者)的估计值,预测值或期望值,并进一步根据实际估计值或期望值 参数子集(再次是过程输入参数或产品性能参数或两者)。 该确定优选地使用该过程的过程紧凑模型来进行,其本身根据模拟模型而开发。

    Method and System for Enhancing the Yield In Semiconductor Manufacturing
    4.
    发明申请
    Method and System for Enhancing the Yield In Semiconductor Manufacturing 有权
    提高半导体制造产量的方法和系统

    公开(公告)号:US20100121474A1

    公开(公告)日:2010-05-13

    申请号:US12692000

    申请日:2010-01-22

    IPC分类号: G05B13/04 G06G7/66 G06F17/11

    摘要: Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.

    摘要翻译: 粗略描述,通过使用TCAD和TCAD衍生的模型来增强制造过程。 开发了该过程的TCAD仿真模型,其根据多个过程输入参数预测将使用该过程制造的产品的性能参数的值。 根据过程模型确定计算的参数子集(包括过程输入参数或产品性能参数或两者)的估计值,预测值或期望值,并进一步根据实际估计值或所需值 参数子集(再次是过程输入参数或产品性能参数或两者)。 该确定优选地使用该过程的过程紧凑模型来进行,其本身根据模拟模型而开发。

    METHOD AND SYSTEM FOR ENHANCING THE YIELD IN SEMICONDUCTOR MANUFACTURING
    5.
    发明申请
    METHOD AND SYSTEM FOR ENHANCING THE YIELD IN SEMICONDUCTOR MANUFACTURING 有权
    用于增强半导体制造中的电感的方法和系统

    公开(公告)号:US20090005894A1

    公开(公告)日:2009-01-01

    申请号:US12208279

    申请日:2008-09-10

    IPC分类号: G06F19/00 G06G7/66

    摘要: Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.

    摘要翻译: 粗略描述,通过使用TCAD和TCAD衍生的模型来增强制造过程。 开发了该过程的TCAD仿真模型,其根据多个过程输入参数预测将使用该过程制造的产品的性能参数的值。 根据过程模型确定计算的参数子集(包括过程输入参数或产品性能参数或两者)的估计值,预测值或期望值,并进一步根据实际估计值或所需值 参数子集(再次是过程输入参数或产品性能参数或两者)。 该确定优选地使用该过程的过程紧凑模型来进行,其本身根据模拟模型而开发。