知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

9 条记录 (耗时 0.012 秒)

    Method and system for enhancing the yield in semiconductor manufacturing
    2.
    发明授权
    Method and system for enhancing the yield in semiconductor manufacturing 有权
    提高半导体制造产量的方法和系统

    公开(公告)号：US08090464B2

    公开(公告)日：2012-01-03

    申请号：US12208279

    申请日：2008-09-10

    申请人： Lars Bomholt ,  Jim Chalmers ,  Wolfgang Fichtner

    发明人： Lars Bomholt ,  Jim Chalmers ,  Wolfgang Fichtner

    IPC分类号： G06F19/00

    CPC分类号： G05B19/41885 ,  G03F7/705 ,  G05B2219/32017 ,  G05B2219/45031 ,  G06F17/5009 ,  G06F2217/80 ,  Y02P90/26

    摘要： Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.

    摘要翻译： 粗略描述，通过使用TCAD和TCAD衍生的模型来增强制造过程。 开发了该过程的TCAD仿真模型，其根据多个过程输入参数预测将使用该过程制造的产品的性能参数的值。 根据过程模型确定计算的参数子集（包括过程输入参数或产品性能参数或两者）的估计值，预测值或期望值，并进一步根据实际估计值或期望值 参数子集（再次是过程输入参数或产品性能参数或两者）。 该确定优选地使用该过程的过程紧凑模型来进行，其本身根据模拟模型而开发。

    METHODS FOR MANUFACTURING INTEGRATED CIRCUIT DEVICES HAVING FEATURES WITH REDUCED EDGE CURVATURE
    5.
    发明申请
    METHODS FOR MANUFACTURING INTEGRATED CIRCUIT DEVICES HAVING FEATURES WITH REDUCED EDGE CURVATURE 有权
    具有降低边缘曲线特征的集成电路装置的制造方法

    公开(公告)号：US20130065380A1

    公开(公告)日：2013-03-14

    申请号：US13350523

    申请日：2012-01-13

    申请人： Victor Moroz ,  Lars Bomholt

    发明人： Victor Moroz ,  Lars Bomholt

    IPC分类号： H01L21/20 ,  H01L21/302

    CPC分类号： H01L29/045 ,  G06F17/5045 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/308 ,  H01L29/0676

    摘要： A structure, such as an integrated circuit device, is described that includes a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in etching the line. Techniques are described for processing a line of crystalline phase material which has already been etched using the mask element, in a manner which straightens an etched sidewall surface of the line. The straightened sidewall surface does not carry the sidewall surface variations introduced by photolithographic processes, or other patterning processes, involved in forming the mask element and etching the line.

    摘要翻译： 描述了一种诸如集成电路器件的结构，其包括具有临界尺寸的材料线，其在基本上小于在蚀刻线中使用的掩模元件（例如图案化的抗蚀剂元件）的分布内变化。 描述了用于处理已经使用掩模元件蚀刻的一系列晶相材料的技术，其以直线化该线的蚀刻侧壁表面的方式。 拉直的侧壁表面不承载由形成掩模元件并蚀刻线的光刻工艺或其它图案化工艺引入的侧壁表面变化。

    Method and system for enhancing the yield in semiconductor manufacturing
    7.
    发明授权
    Method and system for enhancing the yield in semiconductor manufacturing 有权
    提高半导体制造产量的方法和系统

    公开(公告)号：US07792595B1

    公开(公告)日：2010-09-07

    申请号：US11139110

    申请日：2005-05-27

    申请人： Lars Bomholt ,  Jim Chalmers ,  Wolfgang Fichtner

    发明人： Lars Bomholt ,  Jim Chalmers ,  Wolfgang Fichtner

    IPC分类号： G05B13/02

    CPC分类号： G05B19/41885 ,  G03F7/705 ,  G05B2219/32017 ,  G05B2219/45031 ,  G06F17/5009 ,  G06F2217/80 ,  Y02P90/26

    摘要： Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.

    摘要翻译： 粗略描述，通过使用TCAD和TCAD衍生的模型来增强制造过程。 开发了该过程的TCAD仿真模型，其根据多个过程输入参数预测将使用该过程制造的产品的性能参数的值。 根据过程模型确定计算的参数子集（包括过程输入参数或产品性能参数或两者）的估计值，预测值或期望值，并进一步根据实际估计值或期望值 参数子集（再次是过程输入参数或产品性能参数或两者）。 该确定优选地使用该过程的过程紧凑模型来进行，其本身根据模拟模型而开发。

    Method and System for Enhancing the Yield In Semiconductor Manufacturing
    8.
    发明申请
    Method and System for Enhancing the Yield In Semiconductor Manufacturing 有权
    提高半导体制造产量的方法和系统

    公开(公告)号：US20100121474A1

    公开(公告)日：2010-05-13

    申请号：US12692000

    申请日：2010-01-22

    申请人： Lars Bomholt ,  Jim Chalmers ,  Wolfgang Fichtner

    发明人： Lars Bomholt ,  Jim Chalmers ,  Wolfgang Fichtner

    IPC分类号： G05B13/04 ,  G06G7/66 ,  G06F17/11

    CPC分类号： G05B19/41885 ,  G03F7/705 ,  G05B2219/32017 ,  G05B2219/45031 ,  G06F17/5009 ,  G06F2217/80 ,  Y02P90/26

    摘要： Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.

    摘要翻译： 粗略描述，通过使用TCAD和TCAD衍生的模型来增强制造过程。 开发了该过程的TCAD仿真模型，其根据多个过程输入参数预测将使用该过程制造的产品的性能参数的值。 根据过程模型确定计算的参数子集（包括过程输入参数或产品性能参数或两者）的估计值，预测值或期望值，并进一步根据实际估计值或所需值 参数子集（再次是过程输入参数或产品性能参数或两者）。 该确定优选地使用该过程的过程紧凑模型来进行，其本身根据模拟模型而开发。

    METHOD AND SYSTEM FOR ENHANCING THE YIELD IN SEMICONDUCTOR MANUFACTURING
    9.
    发明申请
    METHOD AND SYSTEM FOR ENHANCING THE YIELD IN SEMICONDUCTOR MANUFACTURING 有权
    用于增强半导体制造中的电感的方法和系统

    公开(公告)号：US20090005894A1

    公开(公告)日：2009-01-01

    申请号：US12208279

    申请日：2008-09-10

    申请人： Lars BOMHOLT ,  Jim Chalmers ,  Wolfgang Fichtner

    发明人： Lars BOMHOLT ,  Jim Chalmers ,  Wolfgang Fichtner

    IPC分类号： G06F19/00 ,  G06G7/66

    CPC分类号： G05B19/41885 ,  G03F7/705 ,  G05B2219/32017 ,  G05B2219/45031 ,  G06F17/5009 ,  G06F2217/80 ,  Y02P90/26

    摘要： Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.

    摘要翻译： 粗略描述，通过使用TCAD和TCAD衍生的模型来增强制造过程。 开发了该过程的TCAD仿真模型，其根据多个过程输入参数预测将使用该过程制造的产品的性能参数的值。 根据过程模型确定计算的参数子集（包括过程输入参数或产品性能参数或两者）的估计值，预测值或期望值，并进一步根据实际估计值或所需值 参数子集（再次是过程输入参数或产品性能参数或两者）。 该确定优选地使用该过程的过程紧凑模型来进行，其本身根据模拟模型而开发。