公开(公告)号：US11688763B2

公开(公告)日：2023-06-27

申请号：US16950420

申请日：2020-11-17

Applicant: Littelfuse, Inc.

Inventor： Ader Shen ,  Ting-Fung Chang ,  James Lu ,  Wayne Lin

IPC: H01L29/06 ,  H01L21/74 ,  H01L21/76 ,  H01L21/306 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/763 ,  H01L21/768 ,  H01L23/535 ,  H01L29/861

CPC classification number: H01L29/0642 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/32055 ,  H01L21/743 ,  H01L21/76 ,  H01L21/763 ,  H01L21/76877 ,  H01L23/535 ,  H01L29/8611

Abstract: A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.

公开(公告)号：US20170373142A1

公开(公告)日：2017-12-28

申请号：US15190469

申请日：2016-06-23

Applicant: Littelfuse, Inc.

Inventor： Ader Shen ,  Ting-Fung Chang ,  James Lu ,  Wayne Lin

IPC: H01L29/06 ,  H01L21/768 ,  H01L21/763 ,  H01L21/324 ,  H01L21/3205 ,  H01L23/535 ,  H01L21/306

Abstract: A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.

公开(公告)号：US20210091178A1

公开(公告)日：2021-03-25

申请号：US16950420

申请日：2020-11-17

Applicant: Littelfuse, Inc.

Inventor： Ader Shen ,  Ting-Fung Chang ,  James Lu ,  Wayne Lin

IPC: H01L29/06 ,  H01L21/74 ,  H01L21/76 ,  H01L21/306 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/763 ,  H01L21/768 ,  H01L23/535

Abstract: A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.

公开(公告)号：US10943975B2

公开(公告)日：2021-03-09

申请号：US16457500

申请日：2019-06-28

Applicant: Littelfuse, Inc.

Inventor： Ader Shen ,  Ting-Fung Chang ,  James Lu ,  Wayne Lin

IPC: H01L21/74 ,  H01L29/06 ,  H01L21/76 ,  H01L21/306 ,  H01L21/3205 ,  H01L21/324 ,  H01L21/763 ,  H01L21/768 ,  H01L23/535 ,  H01L29/861

Abstract: A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.

公开(公告)号：US20190326390A1

公开(公告)日：2019-10-24

申请号：US16457500

申请日：2019-06-28

Applicant: Littelfuse, Inc.

Inventor： Ader Shen ,  Ting-Fung Chang ,  James Lu ,  Wayne Lin

IPC: H01L29/06 ,  H01L21/306 ,  H01L23/535 ,  H01L21/76 ,  H01L21/324 ,  H01L21/74 ,  H01L21/763 ,  H01L21/768 ,  H01L21/3205

Abstract: A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.

公开(公告)号：US10074642B2

公开(公告)日：2018-09-11

申请号：US14407264

申请日：2013-07-03

Applicant: LITTELFUSE, INC.

Inventor： Ader Shen ,  Ethan Kuo ,  Ting-Fung Chang

IPC: H01L27/02 ,  H02H9/04 ,  H02H9/00

CPC classification number: H01L27/0248 ,  H01L27/0255 ,  H01L27/0262 ,  H02H9/005 ,  H02H9/04 ,  H02H9/043 ,  H02H9/044

Abstract: A circuit protection component including a crowbar device for protecting electronic devices from transients is generally disclosed. The circuit protection component may include a steering diode bridge and a crowbar device electrically connected to the steering diode bridge. The crowbar device may have a base and an emitter formed on a first layer, the first layer defining a breakdown voltage, which when exceeded allows current to pass under the emitter and out the device through a hole formed in the emitter.

公开(公告)号：US20150116873A1

公开(公告)日：2015-04-30

申请号：US14407264

申请日：2013-07-03

Applicant: LITTELFUSE, INC.

Inventor： Ader Shen ,  Ethan Kuo ,  Ting-Fung Cchang

IPC: H01L27/02 ,  H02H9/00 ,  H02H9/04

CPC classification number: H01L27/0248 ,  H01L27/0255 ,  H01L27/0262 ,  H02H9/005 ,  H02H9/04 ,  H02H9/043 ,  H02H9/044

Abstract: A circuit protection component including a crowbar device for protecting electronic devices from transients is generally disclosed. The circuit protection component may include a steering diode bridge and a crowbar device electrically connected to the steering diode bridge. The crowbar device may have a base and an emitter formed on a first layer, the first layer defining a breakdown voltage, which when exceeded allows current to pass under the emitter and out the device through a hole formed in the emitter.

Abstract translation: 通常公开了包括用于保护电子设备免于瞬变的撬棍装置的电路保护组件。 电路保护组件可以包括电连接到转向二极管桥的转向二极管桥和短路器装置。 所述短路器装置可以具有形成在第一层上的基极和发射极，所述第一层限定击穿电压，当超过允许电流在发射极之下时，电流通过形成在发射极中的孔而流过器件。