公开(公告)号：US20240112893A1

公开(公告)日：2024-04-04

申请号：US18534182

申请日：2023-12-08

Applicant: Lam Research Corporation

Inventor： Feng WANG ,  Keith GAFF ,  Christopher KIMBALL

IPC: H01J37/32 ,  H01J37/244 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32715 ,  H01J37/244 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32568 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833 ,  H01J2237/002 ,  H01J2237/3321 ,  H01L21/68742

Abstract: An electrostatic chuck for a substrate processing system is provided. The electrostatic chuck includes: a top plate configured to electrostatically clamp to a substrate and formed of ceramic; an intermediate layer disposed below the top plate; and a baseplate disposed below the intermediate layer and formed of ceramic. The intermediate layer bonds the top plate to the baseplate.

公开(公告)号：US20220148903A1

公开(公告)日：2022-05-12

申请号：US17429434

申请日：2020-01-27

Applicant: LAM RESEARCH CORPORATION

Inventor： Feng WANG ,  Keith GAFF ,  Christopher KIMBALL ,  Darrell EHRLICH

IPC: H01L21/683 ,  H01J37/32 ,  C04B37/00 ,  C04B41/00 ,  C04B41/45

Abstract: An electrostatic chuck for a substrate processing system includes a monolithic body made of ceramic. A plurality of first electrodes are arranged in the monolithic body adjacent to a top surface of the monolithic body and that are configured to selectively receive a chucking signal. A gas channel is formed in the monolithic body and is configured to supply back side gas to the top surface. Coolant channels are formed in the monolithic body and are configured to receive fluid to control a temperature of the monolithic body.

公开(公告)号：US20180166312A1

公开(公告)日：2018-06-14

申请号：US15894670

申请日：2018-02-12

Applicant: Lam Research Corporation

Inventor： Christopher KIMBALL ,  Keith GAFF ,  Feng WANG

IPC: H01L21/683 ,  H01L21/66 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01J37/00 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32816 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68785 ,  H01L22/26

Abstract: An edge ring for use in a plasma processing chamber with a chuck is provided. An edge ring body has a first surface to be placed over and facing the chuck, wherein the first surface forms a ring around an aperture. A first elastomer ring is integrated to the first surface and extending around the aperture.

公开(公告)号：US20230127806A1

公开(公告)日：2023-04-27

申请号：US17914499

申请日：2020-03-27

Applicant: LAM RESEARCH CORPORATION

Inventor： Anthony John RICCI ,  Keith GAFF

IPC: H01J37/32

Abstract: A substrate processing system includes: a substrate support within a processing chamber to vertically support a substrate; a temperature probe including: a first temperature sensor to measure a first temperature of the substrate support; a second temperature sensor to measure a second temperature of the substrate support; a third temperature sensor to measure a third temperature of the substrate support; and a fourth temperature sensor to measure a fourth temperature of the substrate support; a temperature module to: in a first state, determine a substrate support temperature of the substrate support based on the first, second, third, and fourth temperatures; in a second state, determine the substrate support temperature based on only three of the first, second, third, and fourth temperatures; and a temperature control module configured to control at least one of heating and cooling of the substrate support based on the substrate support temperature.

公开(公告)号：US20180277412A1

公开(公告)日：2018-09-27

申请号：US15988581

申请日：2018-05-24

Applicant: Lam Research Corporation

Inventor： Christopher KIMBALL ,  Keith GAFF ,  Alexander MATYUSHKIN ,  Zhigang CHEN ,  Keith COMENDANT

IPC: H01L21/683 ,  H01J37/32

Abstract: An electrostatic chuck assembly for processing a semiconductor substrate is provided. The electrostatic chuck assembly includes a first layer, a baseplate, a second layer, and at least one annular gasket. The first layer includes ceramic material and a first radio frequency (RF) electrode. The first RF electrode is embedded in the ceramic material. The second layer is disposed between the first layer and the baseplate. The at least one annular gasket extends along an upper surface of the baseplate and through the second layer. The at least one annular gasket electrically couples the upper surface of the baseplate to the first RF electrode. RF power passes from the baseplate to the first RF electrode through the at least one annular gasket.

公开(公告)号：US20220380894A1

公开(公告)日：2022-12-01

申请号：US17880855

申请日：2022-08-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Keith GAFF ,  Devin RAMDUTT ,  Ann ERICKSON

IPC: C23C16/44 ,  H01L21/67 ,  H01L21/687 ,  C23C16/505 ,  C23C16/46

Abstract: A method is provided and includes: determining a temperature distribution pattern across a substrate or a support plate of a substrate support; determining, based on the temperature distribution pattern, a number of masks to apply to a top surface of the support plate, where the number of masks is greater than or equal to two; and determining patterns of the masks based on the temperature distribution pattern; and applying the masks over the top surface. The method further includes: performing a first machining process to remove a portion of the support plate unprotected by the masks to form first mesas and first recessed areas between the first mesas; removing a first mask from the support plate; performing a second machining process to form second recessed areas and at least one of second mesas or a first seal band area; and removing a second mask from the support plate.

公开(公告)号：US20210166965A1

公开(公告)日：2021-06-03

申请号：US17175315

申请日：2021-02-12

Applicant: Lam Research Corporation

Inventor： Christopher KIMBALL ,  Keith GAFF ,  Feng WANG

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/687 ,  H01L21/66

Abstract: A method for electrostatically clamping an edge ring in a plasma processing chamber with an electrostatic ring clamp with at least one ring backside temperature channel for providing a flow of gas to the edge ring is provided. A vacuum is provided to the at least one ring backside temperature channel Pressure in the backside temperature channel is measured. An electrostatic ring clamping voltage is provided when the pressure in the backside temperature channel reaches a threshold maximum pressure. The vacuum to the backside temperature channel is discontinued. Pressure in the backside temperature channel is measured. If pressure in the backside temperature channel rises faster than a threshold rate, then sealing failure is indicated. If pressure in the backside temperature channel does not rise faster than the threshold rate, a plasma process is continued, using the backside temperature channel to regulate a temperature of the edge ring.