公开(公告)号：US20180240649A1

公开(公告)日：2018-08-23

申请号：US15436414

申请日：2017-02-17

Applicant: Lam Research Corporation

Inventor： Jeremy SMITH ,  Eric PAPE ,  Devin RAMDUTT

IPC: H01J37/32 ,  C23C28/04 ,  C23C28/00 ,  C23C16/40 ,  C23C16/02 ,  C23C16/455 ,  C23C18/12 ,  C23C18/04 ,  C23C4/134 ,  C23C4/11 ,  B05D1/02 ,  B05D1/18 ,  B05D1/28 ,  B05D3/00 ,  B05D1/36 ,  C23C4/18

CPC classification number: H01J37/32495 ,  C23C4/11 ,  C23C4/134 ,  C23C4/18 ,  C23C16/4404 ,  C23C18/04 ,  C23C18/1245 ,  C23C18/1254 ,  C23C28/042 ,  C23C28/044 ,  H01J37/32082

Abstract: A method for forming a protective coating for a component of plasma processing chamber is provided. A first ceramic coating is plasma sprayed over a surface of the component, wherein the first ceramic coating has pores. A sealant is applied over the first ceramic coating wherein sealant fills the pores of the first ceramic coating. The sealant is cured. A second ceramic coating is deposited over the first ceramic coating and sealant, wherein the second ceramic coating is thinner than and more dense than the first ceramic coating, wherein the depositing the second ceramic coating is by at least one of aerosol depositing or atomic layer deposition or sol-gel deposition.

公开(公告)号：US20220380894A1

公开(公告)日：2022-12-01

申请号：US17880855

申请日：2022-08-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Keith GAFF ,  Devin RAMDUTT ,  Ann ERICKSON

IPC: C23C16/44 ,  H01L21/67 ,  H01L21/687 ,  C23C16/505 ,  C23C16/46

Abstract: A method is provided and includes: determining a temperature distribution pattern across a substrate or a support plate of a substrate support; determining, based on the temperature distribution pattern, a number of masks to apply to a top surface of the support plate, where the number of masks is greater than or equal to two; and determining patterns of the masks based on the temperature distribution pattern; and applying the masks over the top surface. The method further includes: performing a first machining process to remove a portion of the support plate unprotected by the masks to form first mesas and first recessed areas between the first mesas; removing a first mask from the support plate; performing a second machining process to form second recessed areas and at least one of second mesas or a first seal band area; and removing a second mask from the support plate.