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1.
公开(公告)号:US20230245862A1
公开(公告)日:2023-08-03
申请号:US18013347
申请日:2022-06-15
Applicant: LAM RESEARCH CORPORATION
Inventor: Anthony John RICCI , Ramon Liwanag BUAN , Wayne Edward RICHTER , Christopher J. PENA , Marissa Elena Ortiz AMAYA
IPC: H01J37/32
CPC classification number: H01J37/32449 , H01J37/32834 , H01J37/32899 , H01J37/32357 , H01J2237/182 , H01J2237/186 , H01J2237/334 , H01J2237/24585
Abstract: A gas delivery system for substrate processing tool includes a first gas box configured to supply a first gas mixture including one or more gases selected from a first set of N gases to a first substrate processing chamber, where N is an integer greater than one. A second gas box is configured to selectively supply a second gas mixture including one or more gases selected from a second set of M gases to a second substrate processing chamber, where M is an integer greater than one. A third gas box is configured to supply a third gas to the first substrate processing chamber at a first concentration and to supply the third gas to the second substrate processing chamber at a second concentration. The third gas is incompatible with one or more gases in the first set of N gases and with one or more gas in the second set of M gases.
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公开(公告)号:US20230127806A1
公开(公告)日:2023-04-27
申请号:US17914499
申请日:2020-03-27
Applicant: LAM RESEARCH CORPORATION
Inventor: Anthony John RICCI , Keith GAFF
IPC: H01J37/32
Abstract: A substrate processing system includes: a substrate support within a processing chamber to vertically support a substrate; a temperature probe including: a first temperature sensor to measure a first temperature of the substrate support; a second temperature sensor to measure a second temperature of the substrate support; a third temperature sensor to measure a third temperature of the substrate support; and a fourth temperature sensor to measure a fourth temperature of the substrate support; a temperature module to: in a first state, determine a substrate support temperature of the substrate support based on the first, second, third, and fourth temperatures; in a second state, determine the substrate support temperature based on only three of the first, second, third, and fourth temperatures; and a temperature control module configured to control at least one of heating and cooling of the substrate support based on the substrate support temperature.
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