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16 条记录 (耗时 0.014 秒)

    PLASMA SUPPRESSION BEHIND A SHOWERHEAD THROUGH THE USE OF INCREASED PRESSURE
    2.
    发明申请
    PLASMA SUPPRESSION BEHIND A SHOWERHEAD THROUGH THE USE OF INCREASED PRESSURE 有权

    公开(公告)号：US20170260627A1

    公开(公告)日：2017-09-14

    申请号：US15066550

    申请日：2016-03-10

    申请人： Lam Research Corporation

    发明人： Patrick Girard Breiling ,  Ramesh Chandrasekharan ,  Edmund Minshall ,  Colin Smith ,  Andrew Duvall ,  Karl Leeser

    IPC分类号： C23C16/455 ,  C23C16/50

    CPC分类号： C23C16/4408 ,  C23C16/45536 ,  C23C16/45565

    摘要： A substrate processing system includes a showerhead including a stem portion and a head portion. The stem portion is in fluid communication with a process gas source, and the head portion is arranged to provide process gases from the process gas source to a reaction volume of a processing chamber below the showerhead to generate plasma in the reaction volume. A suppressor is arranged above the head portion of the showerhead, extends from the stem portion toward sidewalls of the processing chamber, and is sealed against the sidewalls of the processing chamber or sealed against an enclosure surrounding the suppressor. The suppressor, the sidewalls, and a top surface of the processing chamber, the suppressor and the enclosure, or the suppressor, the enclosure, and the top surface define a partitioned volume of the processing chamber above the showerhead. The partitioned volume is in fluid communication with a purge gas source.

    Method and apparatus for backside deposition reduction by control of wafer support to achieve edge seal
    5.
    发明授权
    Method and apparatus for backside deposition reduction by control of wafer support to achieve edge seal 有权
    用于通过控制晶片支撑来实现边缘密封的背面沉积减少的方法和装置

    公开(公告)号：US09428833B1

    公开(公告)日：2016-08-30

    申请号：US14726055

    申请日：2015-05-29

    申请人： Lam Research Corporation

    发明人： Andrew Duvall ,  Chloe Baldasseroni

    IPC分类号： H01L21/31 ,  C23C16/455 ,  C23C16/52 ,  C23C16/458 ,  H01L21/02 ,  H01L21/285 ,  H01L21/67

    CPC分类号： H01L21/67 ,  C23C16/4409 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/4586 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32715 ,  H01J37/32853 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

    摘要： Method and apparatus for reducing backside deposition by controlling one or more wafer supports are disclosed. A processing chamber, such as a processing chamber for atomic layer deposition, can include a pedestal and one or more wafer supports configured to extend from the pedestal. A wafer can be provided over the pedestal, the one or more wafer supports can contact the backside of the wafer to support the wafer, and the one or more wafer supports can be positioned to a height to cause an outer edge of the wafer to sag. The outer edge of the wafer can sag to substantially contact the pedestal or a carrier ring surrounding the pedestal. This can create an edge seal to limit access by process gases to the backside of the wafer during a deposition process.

    摘要翻译： 公开了通过控制一个或多个晶片支撑件来减少背面沉积的方法和装置。 诸如用于原子层沉积的处理室的处理室可以包括基座和被配置为从基座延伸的一个或多个晶片支撑件。 晶片可以设置在基座上方，一个或多个晶片支撑件可以接触晶片的背面以支撑晶片，并且一个或多个晶片支撑件可以被定位到一定高度，以使晶片的外边缘下垂 。 晶片的外边缘可以下垂以基本上接触基座或围绕基座的承载环。 这可以产生边缘密封，以在沉积过程中限制通过工艺气体进入晶片背面的边缘。

    Plasma suppression behind a showerhead through the use of increased pressure
    7.
    发明授权
    Plasma suppression behind a showerhead through the use of increased pressure 有权

    公开(公告)号：US09758868B1

    公开(公告)日：2017-09-12

    申请号：US15066550

    申请日：2016-03-10

    申请人： Lam Research Corporation

    发明人： Patrick Girard Breiling ,  Ramesh Chandrasekharan ,  Edmund Minshall ,  Colin Smith ,  Andrew Duvall ,  Karl Leeser

    IPC分类号： C23C16/455 ,  C23C16/50

    CPC分类号： C23C16/4408 ,  C23C16/45536 ,  C23C16/45565

    摘要： A substrate processing system includes a showerhead including a stem portion and a head portion. The stem portion is in fluid communication with a process gas source, and the head portion is arranged to provide process gases from the process gas source to a reaction volume of a processing chamber below the showerhead to generate plasma in the reaction volume. A suppressor is arranged above the head portion of the showerhead, extends from the stem portion toward sidewalls of the processing chamber, and is sealed against the sidewalls of the processing chamber or sealed against an enclosure surrounding the suppressor. The suppressor, the sidewalls, and a top surface of the processing chamber, the suppressor and the enclosure, or the suppressor, the enclosure, and the top surface define a partitioned volume of the processing chamber above the showerhead. The partitioned volume is in fluid communication with a purge gas source.

    REDUCING BACKSIDE DEPOSITION AT WAFER EDGE
    10.
    发明申请
    REDUCING BACKSIDE DEPOSITION AT WAFER EDGE 审中-公开
    减少背面沉积在边缘

    公开(公告)号：US20160177444A1

    公开(公告)日：2016-06-23

    申请号：US14578126

    申请日：2014-12-19

    申请人： Lam Research Corporation

    发明人： Chloe Baldasseroni ,  Andrew Duvall ,  Ryan Blaquiere ,  Shankar Swaminathan

    IPC分类号： C23C16/455 ,  C23C16/458

    CPC分类号： C23C16/4585 ,  H01J37/32623 ,  H01L21/68735 ,  H01L21/68785

    摘要： A process chamber for depositing a film on a wafer is provided, including: a pedestal having, a central top surface having a plurality of wafer supports configured to support the wafer at a support level above the central top surface, an annular surface at a step down from the central top surface; a carrier ring configured to be supported by carrier ring supports such that a bottom surface of the carrier ring is at a first vertical separation above the annular surface, the carrier ring having a step down surface defined relative to a top surface; wherein when the carrier ring is seated on the carrier ring supports, then the step down surface of the carrier ring is positioned at a process level that is at a second vertical separation from the support level over the top surface of the pedestal.

    摘要翻译： 提供了一种用于在晶片上沉积膜的处理室，包括：基座，其具有中心顶表面，中心顶表面具有多个晶片支撑件，所述多个晶片支撑件被配置为将晶片支撑在中心顶表面上方的支撑位置处， 从中央顶面下来; 载体环，其被构造成由载体环支撑支撑，使得所述载体环的底表面在所述环形表面上方处于第一垂直间隔，所述载体环具有相对于顶表面限定的台阶面; 其中，当所述承载环位于所述承载环支撑件上时，所述承载环的所述台阶下表面被定位在处于与所述基座的顶表面上方的所述支撑位置垂直分离的处理水平处。