发明申请
US20160079036A1 Systems and Methods for Suppressing Parasitic Plasma and Reducing Within-Wafer Non-Uniformity
有权
抑制寄生等离子体和减少晶片内非均匀性的系统和方法
- 专利标题： Systems and Methods for Suppressing Parasitic Plasma and Reducing Within-Wafer Non-Uniformity
- 专利标题（中）： 抑制寄生等离子体和减少晶片内非均匀性的系统和方法
-
申请号： US14668174申请日： 2015-03-25
-
公开(公告)号： US20160079036A1公开(公告)日： 2016-03-17
- 发明人: Hu Kang , Adrien LaVoie , Shankar Swaminathan , Jun Qian , Chloe Baldasseroni , Frank Pasquale , Andrew Duvall , Ted Minshall , Jennifer Petraglia , Karl Leeser , David Smith , Sesha Varadarajan , Edward Augustyniak , Douglas Keil
- 申请人： LAM RESEARCH CORPORATION
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; C23C16/34 ; C23C16/40 ; C23C16/505 ; C23C16/455
摘要：
A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.
公开/授权文献
信息查询
