公开(公告)号：US20110157074A1

公开(公告)日：2011-06-30

申请号：US12850517

申请日：2010-08-04

Applicant: Kun-Chih Lin ,  Yu-Chang Lo

Inventor： Kun-Chih Lin ,  Yu-Chang Lo

IPC: G06F3/045

CPC classification number: G06F3/044

Abstract: A touch detecting device for a capacitive touch sensor that includes a plurality of sensing units aligned along a predetermined direction, includes a differential detecting module and a processing module. The differential detecting module is configured to detect a capacitance variation between each two adjacent ones of the sensing units so as to generate a sequence of capacitance variations. The processing module is configured to determine a number of transitions corresponding to a number of touched areas on the capacitive touch sensor, where the number of transitions is one or greater. Each of the transitions represents a change from one of a set of the capacitance variations that is positive to one of a succeeding set of the capacitance variations that is negative. A touch detecting method is also disclosed.

Abstract translation: 一种用于电容式触摸传感器的触摸检测装置，包括沿预定方向排列的多个检测单元，包括差分检测模块和处理模块。 差分检测模块被配置为检测每个感测单元中每个两个相邻感测单元之间的电容变化，以便产生电容变化的序列。 处理模块被配置为确定对应于电容式触摸传感器上的多个触摸区域的转换次数，其中转换次数为一个或更多。 每个转换表示从一组电容变化中的一个变为正的电容变化中的一个变为负的变化。 还公开了触摸检测方法。

公开(公告)号：US20100012937A1

公开(公告)日：2010-01-21

申请号：US12269041

申请日：2008-11-12

Applicant: Ming-Hsien Lee ,  Ching-Chieh Shih ,  An-Thung Cho ,  Chia-Tien Peng ,  Kun-Chih Lin

Inventor： Ming-Hsien Lee ,  Ching-Chieh Shih ,  An-Thung Cho ,  Chia-Tien Peng ,  Kun-Chih Lin

IPC: H01L29/04 ,  H01L31/18

CPC classification number: H01L27/14687 ,  G02F2001/13312 ,  G02F2201/58 ,  G06F3/0412 ,  G06F3/042 ,  H01L27/1214 ,  H01L27/14632

Abstract: A method for fabricating a TFT array substrate including the following steps is provided. A substrate having a pixel region and a photosensitive region is provided. A first patterned conductive layer is formed on the substrate, wherein the first patterned conductive layer includes a gate electrode disposed in the pixel region and a first electrode disposed in the photosensitive region, and a photosensitive dielectric layer is formed on the first electrode. A gate insulation layer is formed to cover the gate electrode, the photosensitive dielectric layer and the first electrode. A patterned semiconductor layer is formed on the gate insulation layer above the gate electrode. A source electrode and a drain electrode are formed on the patterned semiconductor layer at two sides of the gate electrode, wherein the gate electrode, the source electrode, and the drain electrode constitute a TFT. A second electrode is formed on the photosensitive dielectric layer.

Abstract translation: 提供了一种制造包括以下步骤的TFT阵列基板的方法。 提供具有像素区域和感光区域的基板。 第一图案化导电层形成在基板上，其中第一图案化导电层包括设置在像素区域中的栅极电极和设置在感光区域中的第一电极，并且在第一电极上形成光敏介电层。 形成栅极绝缘层以覆盖栅电极，光敏介电层和第一电极。 在栅极电极上方的栅极绝缘层上形成有图案化的半导体层。 源电极和漏电极形成在栅电极两侧的图案化半导体层上，其中栅电极，源电极和漏电极构成TFT。 在感光介电层上形成第二电极。

公开(公告)号：US20090283850A1

公开(公告)日：2009-11-19

申请号：US12346857

申请日：2008-12-31

Applicant: An-Thung Cho ,  Chia-Tien Peng ,  Kun-Chih Lin

Inventor： An-Thung Cho ,  Chia-Tien Peng ,  Kun-Chih Lin

IPC: H01L31/0224 ,  H01L21/00

CPC classification number: H01L31/0384 ,  H01L27/14667 ,  H01L27/14692 ,  H01L31/03921 ,  Y02E10/50

Abstract: An optical sensor includes a silicon-rich dielectric photosensitive device and a read-out device. The silicon-rich dielectric photosensitive device includes a first electrode, a second electrode, and a photosensitive silicon-rich dielectric layer disposed therebetween. The photosensitive silicon-rich dielectric layer includes a plurality of nanocrystalline silicon crystals therein. The read-out device is electrically connected to the first electrode of the silicon-rich dielectric photosensitive device for reading out opto-electronic signals transmitted from the photo-sensitive silicon-rich dielectric layer.

Abstract translation: 光学传感器包括富硅介电光敏器件和读出器件。 富含硅的电介质光敏元件包括第一电极，第二电极和位于它们之间的感光性富硅介电层。 感光性富硅介电层在其中包含多个纳米晶体硅晶体。 读出装置电连接到富硅电介质光敏装置的第一电极，用于读出从感光富硅电介质层传输的光电信号。

公开(公告)号：US07608475B2

公开(公告)日：2009-10-27

申请号：US11254303

申请日：2005-10-19

Applicant: Long-Sheng Liao ,  Kun-Chih Lin ,  Chia-Tien Peng

Inventor： Long-Sheng Liao ,  Kun-Chih Lin ,  Chia-Tien Peng

IPC: H01L21/00

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/2205 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

Abstract translation: 用于促进电子迁移率的缓冲层。 缓冲层包括非晶硅层（a-Si）和含氧化物层。 a-Si具有足够高的密度，通过a-Si缓冲层防止衬底中的颗粒扩散到有源层中。 同样，具有导热性的缓冲器为通过受激准分子激光退火（ELA）的无定形有源层重结晶期间的热扩散提供了良好的途径。 因此，结晶硅的晶粒尺寸的均匀性提高，TFT的电子迁移率提高。

公开(公告)号：US20060038173A1

公开(公告)日：2006-02-23

申请号：US11254303

申请日：2005-10-19

Applicant: Long-Sheng Liao ,  Kun-Chih Lin ,  Chia-Tien Peng

Inventor： Long-Sheng Liao ,  Kun-Chih Lin ,  Chia-Tien Peng

IPC: H01L31/0376

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/2205 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

公开(公告)号：US20120286811A1

公开(公告)日：2012-11-15

申请号：US13556212

申请日：2012-07-24

Applicant: Kun-Chih Lin ,  Wen-Chi Wu

Inventor： Kun-Chih Lin ,  Wen-Chi Wu

IPC: G01R27/26

CPC classification number: H03K17/962 ,  G01D5/24 ,  H03K2217/96074 ,  H03K2217/960745

Abstract: A capacitance difference detecting method, comprising: (a) utilizing a voltage control unit to cooperate with a first capacitor to be detected and a second capacitor to be detected to generate a first voltage and a second voltage; and (b) computing a capacitance difference between the first capacitor to be detected and the second capacitor to be detected according to the first voltage, the second voltage and a parameter of the voltage control unit.

Abstract translation: 一种电容差检测方法，包括：（a）利用电压控制单元与待检测的第一电容器和待检测的第二电容器协作以产生第一电压和第二电压; 以及（b）根据第一电压，第二电压和电压控制单元的参数来计算要检测的第一电容器与待检测的第二电容器之间的电容差。

公开(公告)号：US20120204936A1

公开(公告)日：2012-08-16

申请号：US13329099

申请日：2011-12-16

Applicant: Chin-Yao Tsai ,  Yi-Kai Lin ,  I-Heng Tseng ,  Chih-Hsiung Chang ,  Kun-Chih Lin

Inventor： Chin-Yao Tsai ,  Yi-Kai Lin ,  I-Heng Tseng ,  Chih-Hsiung Chang ,  Kun-Chih Lin

IPC: H01L31/052 ,  H01L31/18

CPC classification number: H01L31/02167 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/0468 ,  Y02A30/62 ,  Y02B10/12 ,  Y02E10/50

Abstract: In one aspect of the present invention, a photovoltaic panel includes a substrate, a reflective layer formed on the substrate, a first conductive layer formed on the reflective layer, an active layer formed on the first conductive layer, and a second conductive layer formed on the active layer. The reflective layer has an index of refraction and a thickness such that the reflectance spectrum of the photovoltaic device for light incident on the substrate has a maximum in a selected wavelength range in the visible spectrum.

Abstract translation: 在本发明的一个方面中，光伏面板包括基板，形成在基板上的反射层，形成在反射层上的第一导电层，形成在第一导电层上的有源层，以及形成在第一导电层上的第二导电层 活动层。 反射层具有折射率和厚度，使得入射到基板上的光的光电器件的反射光谱在可见光谱中在选定的波长范围内具有最大值。

公开(公告)号：US08063464B2

公开(公告)日：2011-11-22

申请号：US12541979

申请日：2009-08-17

Applicant: Chien-Sen Weng ,  Yi-Wei Chen ,  Chih-Wei Chao ,  Kun-Chih Lin

Inventor： Chien-Sen Weng ,  Yi-Wei Chen ,  Chih-Wei Chao ,  Kun-Chih Lin

IPC: H01L31/075

CPC classification number: H01L31/035272 ,  G02F1/1362 ,  H01L31/028 ,  H01L31/105 ,  H01L31/18

Abstract: A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes.

Abstract translation: 公开了一种光电检测器。 光检测器具有基板，设置在基板上的半导体层，覆盖在半导体层上的绝缘层，覆盖在绝缘层上的层间电介质层，以及形成在层间电介质层的一部分上的两个电极。 半导体层具有第一掺杂区域，第二掺杂区域和位于第一掺杂区域和第二掺杂区域之间的本征区域。 层间绝缘层具有至少三个孔以暴露绝缘层的一部分，第一掺杂区的一部分和第二掺杂区。 电极通过两个孔连接到第一掺杂区和第二掺杂区。

公开(公告)号：US20090302330A1

公开(公告)日：2009-12-10

申请号：US12541979

申请日：2009-08-17

Applicant: Chien-Sen Weng ,  Yi-Wei Chen ,  Chih-Wei Chao ,  Kun-Chih Lin

Inventor： Chien-Sen Weng ,  Yi-Wei Chen ,  Chih-Wei Chao ,  Kun-Chih Lin

IPC: H01L33/00

CPC classification number: H01L31/035272 ,  G02F1/1362 ,  H01L31/028 ,  H01L31/105 ,  H01L31/18

Abstract: A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes.

Abstract translation: 公开了一种光电检测器。 光检测器具有基板，设置在基板上的半导体层，覆盖在半导体层上的绝缘层，覆盖在绝缘层上的层间电介质层，以及形成在层间电介质层的一部分上的两个电极。 半导体层具有第一掺杂区域，第二掺杂区域和位于第一掺杂区域和第二掺杂区域之间的本征区域。 层间绝缘层具有至少三个孔以暴露绝缘层的一部分，第一掺杂区的一部分和第二掺杂区。 电极通过两个孔连接到第一掺杂区和第二掺杂区。

公开(公告)号：US06922243B2

公开(公告)日：2005-07-26

申请号：US10410557

申请日：2003-04-07

Applicant: Kun-Chih Lin ,  Long-Sheng Liao ,  Chen-Chou Hsu

Inventor： Kun-Chih Lin ,  Long-Sheng Liao ,  Chen-Chou Hsu

IPC: G01N21/21 ,  G01N21/95 ,  G01J4/00

CPC classification number: G01N21/211 ,  G01N2021/213 ,  G01N2021/9513

Abstract: A method of inspecting the grain size of a polysilicon film. A substrate covered by an amorphous silicon layer is provided. Next, the amorphous silicon layer is annealed by a laser beam with a predetermined laser energy density to transfer it to a polysilicon layer. Thereafter, the polysilicon layer is measured by a spectrometer under a predetermined photon energy range to achieve an optical parameter. Finally, the optical parameter is quantized to achieve a determining index, thereby monitoring the grain size of the polysilicon layer.

Abstract translation: 检查多晶硅膜的晶粒尺寸的方法。 提供了由非晶硅层覆盖的衬底。 接下来，通过具有预定激光能量密度的激光束对非晶硅层进行退火，将其转移到多晶硅层。 此后，通过光谱仪在预定的光子能量范围内测量多晶硅层以实现光学参数。 最后，对光学参数进行量化以获得确定指标，从而监测多晶硅层的晶粒尺寸。