公开(公告)号：US20120286811A1

公开(公告)日：2012-11-15

申请号：US13556212

申请日：2012-07-24

Applicant: Kun-Chih Lin ,  Wen-Chi Wu

Inventor： Kun-Chih Lin ,  Wen-Chi Wu

IPC: G01R27/26

CPC classification number: H03K17/962 ,  G01D5/24 ,  H03K2217/96074 ,  H03K2217/960745

Abstract: A capacitance difference detecting method, comprising: (a) utilizing a voltage control unit to cooperate with a first capacitor to be detected and a second capacitor to be detected to generate a first voltage and a second voltage; and (b) computing a capacitance difference between the first capacitor to be detected and the second capacitor to be detected according to the first voltage, the second voltage and a parameter of the voltage control unit.

Abstract translation: 一种电容差检测方法，包括：（a）利用电压控制单元与待检测的第一电容器和待检测的第二电容器协作以产生第一电压和第二电压; 以及（b）根据第一电压，第二电压和电压控制单元的参数来计算要检测的第一电容器与待检测的第二电容器之间的电容差。

公开(公告)号：US09136841B2

公开(公告)日：2015-09-15

申请号：US13561076

申请日：2012-07-29

Applicant: Kun-Chih Lin ,  Wen-Chi Wu

Inventor： Kun-Chih Lin ,  Wen-Chi Wu

IPC: G01R27/26 ,  H03K17/96 ,  G01D5/24

CPC classification number: H03K17/962 ,  G01D5/24 ,  H03K2217/96074 ,  H03K2217/960745

Abstract: A capacitance difference detecting circuit with a control circuit, a first capacitor, a second capacitor, a voltage control unit and a computing device. The control circuit generates a control signal according to a first voltage and a second voltage. The voltage control unit cooperates with the first capacitor to be detected and the second capacitor to be detected, according to the control signal, to generate the first voltage and the second voltage. The computing device computes a capacitance difference between the first capacitor to be detected and the second capacitor to be detected according to the first voltage, the second voltage and a parameter of the voltage control unit.

Abstract translation: 一种具有控制电路，第一电容器，第二电容器，电压控制单元和计算装置的电容差检测电路。 控制电路根据第一电压和第二电压产生控制信号。 电压控制单元根据控制信号与要检测的第一电容器和待检测的第二电容器协作以产生第一电压和第二电压。 计算装置根据第一电压，第二电压和电压控制单元的参数来计算待检测的第一电容器和待检测的第二电容器之间的电容差。

公开(公告)号：US20120286812A1

公开(公告)日：2012-11-15

申请号：US13561076

申请日：2012-07-29

Applicant: Kun-Chih Lin ,  Wen-Chi Wu

Inventor： Kun-Chih Lin ,  Wen-Chi Wu

IPC: G01R27/26

CPC classification number: H03K17/962 ,  G01D5/24 ,  H03K2217/96074 ,  H03K2217/960745

Abstract: A capacitance difference detecting circuit, which comprises: a control circuit, for generating a control signal according to a first voltage and a second voltage; a first capacitor to be detected; a second capacitor to be detected; a voltage control unit, for cooperating with the first capacitor to be detected and the second capacitor to be detected, according to the control signal, to generate the first voltage and the second voltage; and a computing device, for computing a capacitance difference between the first capacitor to be detected and the second capacitor to be detected according to the first voltage, the second voltage and a parameter of the voltage control unit.

Abstract translation: 一种电容差检测电路，包括：控制电路，用于根据第一电压和第二电压产生控制信号; 要检测的第一电容器; 要检测的第二电容器; 根据控制信号，与要检测的第一电容器和待检测的第二电容器配合的电压控制单元，以产生第一电压和第二电压; 以及计算装置，用于根据第一电压，第二电压和电压控制单元的参数来计算要检测的第一电容器和待检测的第二电容器之间的电容差。

公开(公告)号：US20110115502A1

公开(公告)日：2011-05-19

申请号：US12703732

申请日：2010-02-10

Applicant: Kun-Chih Lin ,  Wen-Chi Wu

Inventor： Kun-Chih Lin ,  Wen-Chi Wu

IPC: G01R27/26

CPC classification number: H03K17/962 ,  G01D5/24 ,  H03K2217/96074 ,  H03K2217/960745

Abstract: A capacitance difference detecting circuit, which comprises: a control circuit, for generating a control signal according to a first voltage and a second voltage; a first capacitor to be detected; a second capacitor to be detected; a first constant capacitor, having a terminal coupled to the first terminal of the first capacitor to be detected and the first input terminal; a second constant capacitor, having a terminal coupled to the first terminal of the second capacitor to be detected and the second input terminal; a voltage control unit, cooperating with the first capacitor to be detected, the second capacitor to be detected, the first constant capacitor and the second constant capacitor to control the first voltage and the second voltage. The voltage control unit is an adjustable capacitor and a capacitance value of the adjustable capacitor is controlled by the control signal.

Abstract translation: 一种电容差检测电路，包括：控制电路，用于根据第一电压和第二电压产生控制信号; 要检测的第一电容器; 要检测的第二电容器; 第一恒定电容器，具有耦合到待检测的第一电容器的第一端子和第一输入端子的端子; 第二恒定电容器，具有耦合到待检测的第二电容器的第一端子的端子和第二输入端子; 与待检测的第一电容器，待检测的第二电容器，第一恒定电容器和第二恒定电容器配合的电压控制单元，以控制第一电压和第二电压。 电压控制单元是可调电容器，可调电容器的电容值由控制信号控制。

公开(公告)号：US08264244B2

公开(公告)日：2012-09-11

申请号：US12703732

申请日：2010-02-10

Applicant: Kun-Chih Lin ,  Wen-Chi Wu

Inventor： Kun-Chih Lin ,  Wen-Chi Wu

IPC: G01R27/26

CPC classification number: H03K17/962 ,  G01D5/24 ,  H03K2217/96074 ,  H03K2217/960745

Abstract: A capacitance difference detecting circuit includes a control circuit, for generating a control signal according to a first voltage and a second voltage; a first capacitor to be detected; a second capacitor to be detected; a first constant capacitor, having a terminal coupled to the first terminal of the first capacitor to be detected and the first input terminal; a second constant capacitor, having a terminal coupled to the first terminal of the second capacitor to be detected and the second input terminal; a voltage control unit, cooperating with the first capacitor to be detected, the second capacitor to be detected, the first constant capacitor and the second constant capacitor to control the first voltage and the second voltage. The voltage control unit is an adjustable capacitor and a capacitance value of the adjustable capacitor is controlled by the control signal.

Abstract translation: 电容差检测电路包括用于根据第一电压和第二电压产生控制信号的控制电路; 要检测的第一电容器; 要检测的第二电容器; 第一恒定电容器，具有耦合到待检测的第一电容器的第一端子和第一输入端子的端子; 第二恒定电容器，具有耦合到待检测的第二电容器的第一端子的端子和第二输入端子; 与待检测的第一电容器，待检测的第二电容器，第一恒定电容器和第二恒定电容器配合的电压控制单元，以控制第一电压和第二电压。 电压控制单元是可调电容器，可调电容器的电容值由控制信号控制。

公开(公告)号：US20100012937A1

公开(公告)日：2010-01-21

申请号：US12269041

申请日：2008-11-12

Applicant: Ming-Hsien Lee ,  Ching-Chieh Shih ,  An-Thung Cho ,  Chia-Tien Peng ,  Kun-Chih Lin

Inventor： Ming-Hsien Lee ,  Ching-Chieh Shih ,  An-Thung Cho ,  Chia-Tien Peng ,  Kun-Chih Lin

IPC: H01L29/04 ,  H01L31/18

CPC classification number: H01L27/14687 ,  G02F2001/13312 ,  G02F2201/58 ,  G06F3/0412 ,  G06F3/042 ,  H01L27/1214 ,  H01L27/14632

Abstract: A method for fabricating a TFT array substrate including the following steps is provided. A substrate having a pixel region and a photosensitive region is provided. A first patterned conductive layer is formed on the substrate, wherein the first patterned conductive layer includes a gate electrode disposed in the pixel region and a first electrode disposed in the photosensitive region, and a photosensitive dielectric layer is formed on the first electrode. A gate insulation layer is formed to cover the gate electrode, the photosensitive dielectric layer and the first electrode. A patterned semiconductor layer is formed on the gate insulation layer above the gate electrode. A source electrode and a drain electrode are formed on the patterned semiconductor layer at two sides of the gate electrode, wherein the gate electrode, the source electrode, and the drain electrode constitute a TFT. A second electrode is formed on the photosensitive dielectric layer.

Abstract translation: 提供了一种制造包括以下步骤的TFT阵列基板的方法。 提供具有像素区域和感光区域的基板。 第一图案化导电层形成在基板上，其中第一图案化导电层包括设置在像素区域中的栅极电极和设置在感光区域中的第一电极，并且在第一电极上形成光敏介电层。 形成栅极绝缘层以覆盖栅电极，光敏介电层和第一电极。 在栅极电极上方的栅极绝缘层上形成有图案化的半导体层。 源电极和漏电极形成在栅电极两侧的图案化半导体层上，其中栅电极，源电极和漏电极构成TFT。 在感光介电层上形成第二电极。

公开(公告)号：US20090283850A1

公开(公告)日：2009-11-19

申请号：US12346857

申请日：2008-12-31

Applicant: An-Thung Cho ,  Chia-Tien Peng ,  Kun-Chih Lin

Inventor： An-Thung Cho ,  Chia-Tien Peng ,  Kun-Chih Lin

IPC: H01L31/0224 ,  H01L21/00

CPC classification number: H01L31/0384 ,  H01L27/14667 ,  H01L27/14692 ,  H01L31/03921 ,  Y02E10/50

Abstract: An optical sensor includes a silicon-rich dielectric photosensitive device and a read-out device. The silicon-rich dielectric photosensitive device includes a first electrode, a second electrode, and a photosensitive silicon-rich dielectric layer disposed therebetween. The photosensitive silicon-rich dielectric layer includes a plurality of nanocrystalline silicon crystals therein. The read-out device is electrically connected to the first electrode of the silicon-rich dielectric photosensitive device for reading out opto-electronic signals transmitted from the photo-sensitive silicon-rich dielectric layer.

Abstract translation: 光学传感器包括富硅介电光敏器件和读出器件。 富含硅的电介质光敏元件包括第一电极，第二电极和位于它们之间的感光性富硅介电层。 感光性富硅介电层在其中包含多个纳米晶体硅晶体。 读出装置电连接到富硅电介质光敏装置的第一电极，用于读出从感光富硅电介质层传输的光电信号。

公开(公告)号：US07608475B2

公开(公告)日：2009-10-27

申请号：US11254303

申请日：2005-10-19

Applicant: Long-Sheng Liao ,  Kun-Chih Lin ,  Chia-Tien Peng

Inventor： Long-Sheng Liao ,  Kun-Chih Lin ,  Chia-Tien Peng

IPC: H01L21/00

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/2205 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

Abstract translation: 用于促进电子迁移率的缓冲层。 缓冲层包括非晶硅层（a-Si）和含氧化物层。 a-Si具有足够高的密度，通过a-Si缓冲层防止衬底中的颗粒扩散到有源层中。 同样，具有导热性的缓冲器为通过受激准分子激光退火（ELA）的无定形有源层重结晶期间的热扩散提供了良好的途径。 因此，结晶硅的晶粒尺寸的均匀性提高，TFT的电子迁移率提高。

公开(公告)号：US20060038173A1

公开(公告)日：2006-02-23

申请号：US11254303

申请日：2005-10-19

Applicant: Long-Sheng Liao ,  Kun-Chih Lin ,  Chia-Tien Peng

Inventor： Long-Sheng Liao ,  Kun-Chih Lin ,  Chia-Tien Peng

IPC: H01L31/0376

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/2205 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

Abstract: A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.

公开(公告)号：US20120204936A1

公开(公告)日：2012-08-16

申请号：US13329099

申请日：2011-12-16

Applicant: Chin-Yao Tsai ,  Yi-Kai Lin ,  I-Heng Tseng ,  Chih-Hsiung Chang ,  Kun-Chih Lin

Inventor： Chin-Yao Tsai ,  Yi-Kai Lin ,  I-Heng Tseng ,  Chih-Hsiung Chang ,  Kun-Chih Lin

IPC: H01L31/052 ,  H01L31/18

CPC classification number: H01L31/02167 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/0468 ,  Y02A30/62 ,  Y02B10/12 ,  Y02E10/50

Abstract: In one aspect of the present invention, a photovoltaic panel includes a substrate, a reflective layer formed on the substrate, a first conductive layer formed on the reflective layer, an active layer formed on the first conductive layer, and a second conductive layer formed on the active layer. The reflective layer has an index of refraction and a thickness such that the reflectance spectrum of the photovoltaic device for light incident on the substrate has a maximum in a selected wavelength range in the visible spectrum.

Abstract translation: 在本发明的一个方面中，光伏面板包括基板，形成在基板上的反射层，形成在反射层上的第一导电层，形成在第一导电层上的有源层，以及形成在第一导电层上的第二导电层 活动层。 反射层具有折射率和厚度，使得入射到基板上的光的光电器件的反射光谱在可见光谱中在选定的波长范围内具有最大值。