公开(公告)号：US08633555B2

公开(公告)日：2014-01-21

申请号：US13451553

申请日：2012-04-20

Applicant: Kuei-Hung Shen

Inventor： Kuei-Hung Shen

IPC: H01L29/82 ,  H01L21/02 ,  G11C11/22 ,  G11C11/15

CPC classification number: G01R33/098

Abstract: A magnetic sensor suitable for sensing an external magnetic field includes a magnetic tunnel junction (MTJ) device. The MTJ device is used to sense an out-of-plane (Z-axis) component of the external magnetic field at a perpendicular direction to the MTJ device. The MTJ device includes a first pinned magnetic layer, a tunnel layer and a magnetic sensing layer. The first pinned magnetic layer has a pinned magnetization perpendicular to the first pinned magnetic layer. The tunnel layer is disposed on the first pinned magnetic layer. The magnetic sensing layer is disposed on the tunnel layer. The magnetic sensing layer has a critical thickness set to be within a range having a superparamagnetic property, in which an out-of-plane (Z-axis) magnetic sensitivity is larger than an in-plane (X-axis, Y-axis) magnetic sensitivity. The first pinned magnetic layer, the tunnel layer and the magnetic sensing layer are stacked in a forward sequence or a reverse sequence.

Abstract translation: 适用于感测外部磁场的磁传感器包括磁隧道结（MTJ）装置。 MTJ装置用于在与MTJ装置垂直的方向上检测外部磁场的平面外（Z轴）分量。 MTJ装置包括第一固定磁性层，隧道层和磁感应层。 第一钉扎磁性层具有垂直于第一固定磁性层的钉扎磁化。 隧道层设置在第一钉扎磁性层上。 磁感应层设置在隧道层上。 磁感应层的临界厚度被设定在具有超顺磁性的范围内，其中外平面（Z轴）磁敏度大于平面内（X轴，Y轴） 磁敏感。 第一钉扎磁性层，隧道层和磁感测层以正向或反向顺序堆叠。

公开(公告)号：US08467222B2

公开(公告)日：2013-06-18

申请号：US13284970

申请日：2011-10-30

Applicant: Kuei-Hung Shen ,  Ching-Hsiang Tsai

Inventor： Kuei-Hung Shen ,  Ching-Hsiang Tsai

IPC: G11C19/00

CPC classification number: G11C19/0808 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0841

Abstract: A reader for magnetic shift register is provided. The reader includes a magnetic reference layer, a tunneling layer, a magnetic canceling layer and an isolated layer. The magnetic reference layer and the magnetic canceling layer are respectively configured at different sides of a magnetic track for providing anti-parallel magnetic fields. The magnetic reference layer overlaps the magnetic canceling layer in a perpendicular direction of the magnetic track. The magnetic reference layer electrically connects to a readout circuit. The magnetic canceling layer is floating. The tunneling layer is configured between the magnetic reference layer and the magnetic track for providing a magnetic tunnel junction (MTJ). The isolated layer is configured between the magnetic canceling layer and the magnetic track for avoiding a current in the magnetic track from tunneling to the magnetic canceling layer.

Abstract translation: 提供了一种用于磁移位寄存器的读卡器。 读取器包括磁参考层，隧道层，磁消除层和隔离层。 磁参考层和磁消除层分别配置在用于提供反平行磁场的磁道的不同侧。 磁性参考层在磁迹的垂直方向与磁性消除层重叠。 磁参考层电连接到读出电路。 磁性消除层是浮动的。 隧道层配置在磁参考层和磁轨之间，用于提供磁隧道结（MTJ）。 隔离层配置在磁消除层和磁道之间，以避免磁道中的电流从隧道到磁消除层。

公开(公告)号：US20070249083A1

公开(公告)日：2007-10-25

申请号：US11819063

申请日：2007-06-25

Applicant: Chien-Ming Li ,  Wen-Han Wang ,  Kuei-Hung Shen

Inventor： Chien-Ming Li ,  Wen-Han Wang ,  Kuei-Hung Shen

IPC: H01L31/0376

CPC classification number: G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/003 ,  G11C13/0069 ,  G11C2013/008 ,  G11C2013/009 ,  G11C2213/78 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/165

Abstract: A multilevel phase-change memory, operating method and manufacturing method thereof. The phase-change memory includes two phase-change layers and electrodes, which are configured in a parallel structure to form a memory cell. A voltage-drive mode is employed to control and drive the memory such that multilevel memory states may be achieved by imposing different voltage levels. The provided multilevel phase-change memory has more bits and higher capacity than that of the memory with a single phase-change layer.

Abstract translation: 多级相变存储器，其操作方法及其制造方法。 相变存储器包括两个相变层和电极，其被配置成并联结构以形成存储单元。 使用电压驱动模式来控制和驱动存储器，使得可以通过施加不同的电压电平来实现多电平存储器状态。 所提供的多电平相变存储器具有比具有单个相变层的存储器更多的位和更高的容量。

公开(公告)号：US20070172964A1

公开(公告)日：2007-07-26

申请号：US11308903

申请日：2006-05-24

Applicant: Cheng-Tyng Yen ,  Wei-Chuan Chen ,  Kuei-Hung Shen

Inventor： Cheng-Tyng Yen ,  Wei-Chuan Chen ,  Kuei-Hung Shen

IPC: H01L21/00

CPC classification number: H01L43/12

Abstract: A method of forming a self-aligned contact via for a MRAM is disclosed. A first conductive layer, a pinned layer, a tunneling barrier layer, a free layer, a capping layer and a first dielectric layer are formed sequentially over a substrate has formed lots of transistors and interconects. A portion of the first dielectric layer and the capping layer are removed until a surface of the free layer is exposed. A portion of the pinned layer, the tunneling barrier layer and the free layer are removed to form a MRAM device. A second dielectric layer is formed over the magnetic random access memory device. A planarization process is performed to form a planar surface of the second dielectric layer. The first dielectric layer and a portion of the second dielectric layer are removed to form a self-aligned contact opening. A second conductive layer is filled into the self-aligned contact opening.

Abstract translation: 公开了一种形成用于MRAM的自对准接触通孔的方法。 在衬底上顺序地形成第一导电层，钉扎层，隧道势垒层，自由层，覆盖层和第一介电层，形成了许多晶体管和相互间的关系。 去除第一电介质层和覆盖层的一部分直到暴露自由层的表面。 钉扎层的一部分，隧道势垒层和自由层被去除以形成MRAM器件。 第二电介质层形成在磁性随机存取存储器件上。 进行平面化处理以形成第二电介质层的平坦表面。 去除第一电介质层和第二电介质层的一部分以形成自对准的接触开口。 将第二导电层填充到自对准接触开口中。

公开(公告)号：US09196379B2

公开(公告)日：2015-11-24

申请号：US13338285

申请日：2011-12-28

Applicant: Kuei-Hung Shen

Inventor： Kuei-Hung Shen

IPC: H01L29/82 ,  G11C19/08 ,  G11C11/14 ,  H01L21/00

CPC classification number: G11C19/0841 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1675

Abstract: A magnetic shift register includes a first supporting layer, a second supporting layer, a first pinning material layer, and at least one magnetic memory track. The first supporting layer has trenches on a first surface extending along a first direction. The second supporting layer is filled in the trenches, wherein the first support layer and the second support layer have at least a portion substantially equal in height. The first pinning material layer is disposed between the first supporting layer and the second supporting layer, wherein a plurality of end surfaces of the first pinning material layer are exposed on the first surface. The magnetic memory track extending along a second direction on the first surface is disposed over the first support layer, the first pinning material layer, and the second support layer, wherein the second direction is not the same or perpendicular to the first direction.

Abstract translation: 磁移位寄存器包括第一支撑层，第二支撑层，第一钉扎材料层和至少一个磁存储器轨道。 第一支撑层在沿着第一方向延伸的第一表面上具有沟槽。 第二支撑层填充在沟槽中，其中第一支撑层和第二支撑层具有至少部分高度基本相等的部分。 第一钉扎材料层设置在第一支撑层和第二支撑层之间，其中第一钉扎材料层的多个端面暴露在第一表面上。 沿着第一表面上的第二方向延伸的磁存储器轨道设置在第一支撑层，第一钉扎材料层和第二支撑层之上，其中第二方向不相同或垂直于第一方向。

公开(公告)号：US20130207209A1

公开(公告)日：2013-08-15

申请号：US13447283

申请日：2012-04-16

Applicant: Yung-Hung Wang ,  Kuei-Hung Shen ,  Ding-Yeong Wang ,  Shan-Yi Yang

Inventor： Yung-Hung Wang ,  Kuei-Hung Shen ,  Ding-Yeong Wang ,  Shan-Yi Yang

IPC: H01L29/82

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286

Abstract: A top-pinned magnetic tunnel junction device with perpendicular magnetization, including a bottom electrode, a non-ferromagnetic spacer, a free layer, a tunneling barrier, a synthetic antiferromagnetic reference layer and a top electrode, is provided. The non-ferromagnetic spacer is located on the bottom electrode. The free layer is located on the non-ferromagnetic spacer. The tunnel insulator is located on the free layer. The synthetic antiferromagnetic reference layer is located on the tunneling barrier. The synthetic antiferromagnetic reference layer includes a top reference layer located on the tunneling barrier, a middle reference layer located on the bottom reference layer and a bottom reference layer located on the tunneling barrier. The magnetization of the top reference layer is larger than that of the bottom reference layer. The top electrode is located on the synthetic antiferromagnetic reference layer.

Abstract translation: 提供了具有垂直磁化的顶钉磁隧道结装置，包括底电极，非铁磁隔离件，自由层，隧道势垒，合成反铁磁参考层和顶电极。 非铁磁隔离物位于底部电极上。 自由层位于非铁磁间隔物上。 隧道绝缘子位于自由层上。 合成反铁磁参考层位于隧道势垒上。 合成反铁磁参考层包括位于隧道势垒上的顶部参考层，位于底部参考层上的中间参考层和位于隧道势垒上的底部参考层。 顶部参考层的磁化强度大于底部参考层的磁化强度。 顶部电极位于合成反铁磁参考层上。

公开(公告)号：US08164939B2

公开(公告)日：2012-04-24

申请号：US12710373

申请日：2010-02-23

Applicant: Chien-Chung Hung ,  Kuei-Hung Shen ,  Ching-Hsiang Tsai

Inventor： Chien-Chung Hung ,  Kuei-Hung Shen ,  Ching-Hsiang Tsai

IPC: G11C19/00

CPC classification number: G11C19/0808

Abstract: A magnetic shift register memory includes a magnetic track and a reference magnetic region. The magnetic track has multiple magnetic domains. Each of the magnetic domains stores one bit data. One end of the magnetic domains is set with a first data injection domain for storing a first data, and a second data injection domain is located adjacent to the first data injection domain. The reference magnetic region corresponding to the second data injection region is implemented at a side of the magnetic track for storing a second data.

Abstract translation: 磁移位寄存器包括磁轨和参考磁区。 磁道具有多个磁畴。 每个磁畴存储一位数据。 磁畴的一端设置有用于存储第一数据的第一数据注入域，并且第二数据注入域位于与第一数据注入域相邻的位置。 对应于第二数据注入区域的参考磁区域被实现在用于存储第二数据的磁道的一侧。

公开(公告)号：US20060077741A1

公开(公告)日：2006-04-13

申请号：US11182866

申请日：2005-07-18

Applicant: Wen-Han Wang ,  Chien-Ming Li ,  Kuei-Hung Shen

Inventor： Wen-Han Wang ,  Chien-Ming Li ,  Kuei-Hung Shen

IPC: G11C7/00

CPC classification number: G11C13/0004 ,  G11C11/56 ,  G11C11/5678 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

Abstract: A multilevel phase-change memory, manufacturing method and status transferring method thereof. The phase-change memory includes two phase-change layers and electrodes, which are configured in a series structure to form a memory cell. A current-drive mode is employed to control and drive the memory such that multilevel memory states may be achieved by imposing different current levels. The provided multilevel phase-change memory has more bits and higher capacity than that of the memory with a single phase-change layer. Furthermore, the series structure may reduce the cell area and the device volume.

Abstract translation: 多级相变存储器，其制造方法和状态转移方法。 相变存储器包括两个相变层和电极，其被构造成串联结构以形成存储单元。 采用电流驱动模式来控制和驱动存储器，使得可以通过施加不同的电流电平来实现多电平存储器状态。 所提供的多电平相变存储器具有比具有单个相变层的存储器更多的位和更高的容量。 此外，串联结构可以减小单元面积和器件体积。

公开(公告)号：US20130168788A1

公开(公告)日：2013-07-04

申请号：US13600795

申请日：2012-08-31

Applicant: Yung-Hung Wang ,  Sheng-Huang Huang ,  Kuei-Hung Shen ,  Keng-Ming Kuo

Inventor： Yung-Hung Wang ,  Sheng-Huang Huang ,  Kuei-Hung Shen ,  Keng-Ming Kuo

IPC: H01L43/06

CPC classification number: G01R33/098

Abstract: A tunneling magneto-resistor reference unit for sensing a magnetic field includes a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. The first MTJ device has a first pinned layer having a first pinned magnetization at a pinned direction, and a first free layer having a first free magnetization parallel to the pinned direction in a zero magnetic field. The second MTJ device has a second pinned layer having a second pinned magnetization at the pinned direction, and a second free layer having a second free magnetization anti-parallel to the pinned direction in a zero magnetic field. Major axes of the first and second MTJ devices have an angle of 45 degrees to a direction of an external magnetic field when sensed.

Abstract translation: 用于感测磁场的隧道磁阻电阻器参考单元包括并联连接的第一MTJ（磁性隧道结）装置和第二MTJ装置。 第一MTJ装置具有在销钉方向上具有第一钉扎磁化的第一固定层和在零磁场中具有平行于钉扎方向的第一自由磁化的第一自由层。 第二MTJ装置具有在钉扎方向上具有第二钉扎磁化的第二钉扎层和在零磁场中具有与销钉方向反平行的第二自由磁化的第二自由层。 第一和第二MTJ装置的主轴在感测时具有与外部磁场方向成45度的角度。

公开(公告)号：US20130168787A1

公开(公告)日：2013-07-04

申请号：US13451553

申请日：2012-04-20

Applicant: Kuei-Hung Shen

Inventor： Kuei-Hung Shen

IPC: H01L29/82

CPC classification number: G01R33/098

Abstract: A magnetic sensor suitable for sensing an external magnetic field includes a magnetic tunnel junction (MTJ) device. The MTJ device is used to sense an out-of-plane (Z-axis) component of the external magnetic field at a perpendicular direction to the MTJ device. The MTJ device includes a first pinned magnetic layer, a tunnel layer and a magnetic sensing layer. The first pinned magnetic layer has a pinned magnetization perpendicular to the first pinned magnetic layer. The tunnel layer is disposed on the first pinned magnetic layer. The magnetic sensing layer is disposed on the tunnel layer. The magnetic sensing layer has a critical thickness to be at a superparamagnetic range, in which an out-of-plane (Z-axis) magnetic sensitivity is larger than an in-plane (X-axis, Y-axis) magnetic sensitivity. The first pinned magnetic layer, the tunnel layer and the magnetic sensing layer are stacked in a forward sequence or a reverse sequence.

Abstract translation: 适用于感测外部磁场的磁传感器包括磁隧道结（MTJ）装置。 MTJ装置用于在与MTJ装置垂直的方向上检测外部磁场的平面外（Z轴）分量。 MTJ装置包括第一固定磁性层，隧道层和磁感应层。 第一钉扎磁性层具有垂直于第一固定磁性层的钉扎磁化。 隧道层设置在第一钉扎磁性层上。 磁感应层设置在隧道层上。 磁感应层具有超平面磁场范围的临界厚度，其中外平面（Z轴）磁敏感度大于平面内（X轴，Y轴）磁敏感度。 第一钉扎磁性层，隧道层和磁感测层以正向或反向顺序堆叠。