公开(公告)号：US08164939B2

公开(公告)日：2012-04-24

申请号：US12710373

申请日：2010-02-23

Applicant: Chien-Chung Hung ,  Kuei-Hung Shen ,  Ching-Hsiang Tsai

Inventor： Chien-Chung Hung ,  Kuei-Hung Shen ,  Ching-Hsiang Tsai

IPC: G11C19/00

CPC classification number: G11C19/0808

Abstract: A magnetic shift register memory includes a magnetic track and a reference magnetic region. The magnetic track has multiple magnetic domains. Each of the magnetic domains stores one bit data. One end of the magnetic domains is set with a first data injection domain for storing a first data, and a second data injection domain is located adjacent to the first data injection domain. The reference magnetic region corresponding to the second data injection region is implemented at a side of the magnetic track for storing a second data.

Abstract translation: 磁移位寄存器包括磁轨和参考磁区。 磁道具有多个磁畴。 每个磁畴存储一位数据。 磁畴的一端设置有用于存储第一数据的第一数据注入域，并且第二数据注入域位于与第一数据注入域相邻的位置。 对应于第二数据注入区域的参考磁区域被实现在用于存储第二数据的磁道的一侧。

公开(公告)号：US08130531B2

公开(公告)日：2012-03-06

申请号：US12690093

申请日：2010-01-19

Applicant: Ching-Hsiang Tsai ,  Kuei-Hung Shen ,  Chien-Chung Hung

Inventor： Ching-Hsiang Tsai ,  Kuei-Hung Shen ,  Chien-Chung Hung

IPC: G11C19/00

CPC classification number: G11C19/0841 ,  G11C11/14

Abstract: A magnetic memory structure includes a memory track which has consecutive magnetic domains. Each of the magnetic domains has memory capacity of one bit. A first domain-wall injecting layer intersects and connects a terminal of the memory track and constantly stores a first binary data. A second domain-wall injecting layer against the first domain-wall injecting layer intersects and connects the terminal of the memory track and constantly stores a second binary data different from the first binary data. The memory track and one of the first domain-wall injecting layer and the second domain-wall injecting layer together form a domain wall.

Abstract translation: 磁存储器结构包括具有连续磁畴的存储器轨道。 每个磁畴具有一位的存储容量。 第一域壁注入层与存储器轨道的端子相交并连接，并且不断地存储第一二进制数据。 针对第一畴壁注入层的第二畴壁注入层与存储轨道的端子相交并连接，并且不断地存储与第一二进制数据不同的第二二进制数据。 存储器轨道和第一域壁注入层和第二域壁注入层中的一个一起形成畴壁。

公开(公告)号：US20110157955A1

公开(公告)日：2011-06-30

申请号：US12710373

申请日：2010-02-23

Applicant: Chien-Chung Hung ,  Kuei-Hung Shen ,  Ching-Hsiang Tsai

Inventor： Chien-Chung Hung ,  Kuei-Hung Shen ,  Ching-Hsiang Tsai

IPC: G11C19/00

CPC classification number: G11C19/0808

Abstract: A magnetic shift register memory includes a magnetic track and a reference magnetic region. The magnetic track has multiple magnetic domains. Each of the magnetic domains stores one bit data. One end of the magnetic domains is set with a first data injection domain for storing a first data, and a second data injection domain is located adjacent to the first data injection domain. The reference magnetic region corresponding to the second data injection region is implemented at a side of the magnetic track for storing a second data.

Abstract translation: 磁移位寄存器包括磁轨和参考磁区。 磁道具有多个磁畴。 每个磁畴存储一位数据。 磁畴的一端设置有用于存储第一数据的第一数据注入域，并且第二数据注入域位于与第一数据注入域相邻的位置。 对应于第二数据注入区域的参考磁区域被实现在用于存储第二数据的磁道的一侧。

公开(公告)号：US20110090730A1

公开(公告)日：2011-04-21

申请号：US12690093

申请日：2010-01-19

Applicant: Ching-Hsiang Tsai ,  Kuei-Hung Shen ,  Chien-Chung Hung

Inventor： Ching-Hsiang Tsai ,  Kuei-Hung Shen ,  Chien-Chung Hung

IPC: G11C19/00

CPC classification number: G11C19/0841 ,  G11C11/14

Abstract: A magnetic memory structure includes a memory track which has consecutive magnetic domains. Each of the magnetic domains has memory capacity of one bit. A first domain-wall injecting layer intersects and connects a terminal of the memory track and constantly stores a first binary data. A second domain-wall injecting layer against the first domain-wall injecting layer intersects and connects the terminal of the memory track and constantly stores a second binary data different from the first binary data. The memory track and one of the first domain-wall injecting layer and the second domain-wall injecting layer together form a domain wall.

Abstract translation: 磁存储器结构包括具有连续磁畴的存储器轨道。 每个磁畴具有一位的存储容量。 第一域壁注入层与存储器轨道的端子相交并连接，并且不断地存储第一二进制数据。 针对第一畴壁注入层的第二畴壁注入层与存储轨道的端子相交并连接，并且不断地存储与第一二进制数据不同的第二二进制数据。 存储器轨道和第一域壁注入层和第二域壁注入层中的一个一起形成畴壁。

公开(公告)号：US08467222B2

公开(公告)日：2013-06-18

申请号：US13284970

申请日：2011-10-30

Applicant: Kuei-Hung Shen ,  Ching-Hsiang Tsai

Inventor： Kuei-Hung Shen ,  Ching-Hsiang Tsai

IPC: G11C19/00

CPC classification number: G11C19/0808 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0841

Abstract: A reader for magnetic shift register is provided. The reader includes a magnetic reference layer, a tunneling layer, a magnetic canceling layer and an isolated layer. The magnetic reference layer and the magnetic canceling layer are respectively configured at different sides of a magnetic track for providing anti-parallel magnetic fields. The magnetic reference layer overlaps the magnetic canceling layer in a perpendicular direction of the magnetic track. The magnetic reference layer electrically connects to a readout circuit. The magnetic canceling layer is floating. The tunneling layer is configured between the magnetic reference layer and the magnetic track for providing a magnetic tunnel junction (MTJ). The isolated layer is configured between the magnetic canceling layer and the magnetic track for avoiding a current in the magnetic track from tunneling to the magnetic canceling layer.

Abstract translation: 提供了一种用于磁移位寄存器的读卡器。 读取器包括磁参考层，隧道层，磁消除层和隔离层。 磁参考层和磁消除层分别配置在用于提供反平行磁场的磁道的不同侧。 磁性参考层在磁迹的垂直方向与磁性消除层重叠。 磁参考层电连接到读出电路。 磁性消除层是浮动的。 隧道层配置在磁参考层和磁轨之间，用于提供磁隧道结（MTJ）。 隔离层配置在磁消除层和磁道之间，以避免磁道中的电流从隧道到磁消除层。

公开(公告)号：US20130033917A1

公开(公告)日：2013-02-07

申请号：US13284970

申请日：2011-10-30

Applicant: Kuei-Hung Shen ,  Ching-Hsiang Tsai

Inventor： Kuei-Hung Shen ,  Ching-Hsiang Tsai

IPC: G11C19/00

CPC classification number: G11C19/0808 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0841

Abstract: A reader for magnetic shift register is provided. The reader includes a magnetic reference layer, a tunneling layer, a magnetic canceling layer and an isolated layer. The magnetic reference layer and the magnetic canceling layer are respectively configured at different sides of a magnetic track for providing anti-parallel magnetic fields. The magnetic reference layer overlaps the magnetic canceling layer in a perpendicular direction of the magnetic track. The magnetic reference layer electrically connects to a readout circuit. The magnetic canceling layer is floating. The tunneling layer is configured between the magnetic reference layer and the magnetic track for providing a magnetic tunnel junction (MTJ). The isolated layer is configured between the magnetic canceling layer and the magnetic track for avoiding a current in the magnetic track from tunneling to the magnetic canceling layer.

Abstract translation: 提供了一种用于磁移位寄存器的读卡器。 读取器包括磁参考层，隧道层，磁消除层和隔离层。 磁参考层和磁消除层分别配置在用于提供反平行磁场的磁道的不同侧。 磁性参考层在磁迹的垂直方向与磁性消除层重叠。 磁参考层电连接到读出电路。 磁性消除层是浮动的。 隧道层配置在磁参考层和磁轨之间，用于提供磁隧道结（MTJ）。 隔离层配置在磁消除层和磁道之间，以避免磁道中的电流从隧道到磁消除层。

公开(公告)号：US07843719B2

公开(公告)日：2010-11-30

申请号：US12365847

申请日：2009-02-04

Applicant: Chien-Chung Hung ,  Kuei-Hung Shen

Inventor： Chien-Chung Hung ,  Kuei-Hung Shen

IPC: G11C11/00

CPC classification number: G11C19/0841 ,  G11C11/14

Abstract: A magnetic shift register memory includes at least a magnetic memory track, in which multiple domain walls separate the memory track into multiple magnetic domains to serve as magnetic memory cells. A fixed number of the magnetic memory cells forms a memory unit to store a burst data. A read/write device is implemented between the memory units to read or write the burst data to the magnetic memory cells passing the read/write device. A flag unit records a flag value for each memory track or each memory unit to indicate whether the burst data is located at a first side or a second side of the read/write device. A current unit provides an operation current to the magnetic memory track according to the flag value to move the domain walls to pass the read/write device. After the read/write device reads or writes the burst data, the flag value is updated.

Abstract translation: 磁移位寄存器存储器至少包括磁存储器轨道，其中多个畴壁将存储器轨道分离成多个磁畴以用作磁存储器单元。 固定数量的磁存储单元形成存储单元以存储突发数据。 在存储器单元之间实现读/写设备，以将突发数据读取或写入到通过读/写设备的磁存储单元。 标志单元记录每个存储器轨道或每个存储器单元的标志值，以指示突发数据是位于读/写设备的第一侧还是第二侧。 当前单元根据标志值向磁存储器轨道提供操作电流以移动畴壁以通过读/写设备。 在读/写设备读/写突发数据之后，更新标志值。

公开(公告)号：US20100118583A1

公开(公告)日：2010-05-13

申请号：US12365847

申请日：2009-02-04

Applicant: Chien-Chung Hung ,  Kuei-Hung Shen

Inventor： Chien-Chung Hung ,  Kuei-Hung Shen

IPC: G11C19/00 ,  G11C11/416

CPC classification number: G11C19/0841 ,  G11C11/14

Abstract: A magnetic shift register memory includes at least a magnetic memory track, in which multiple domain walls separate the memory track into multiple magnetic domains to serve as magnetic memory cells. A fixed number of the magnetic memory cells forms a memory unit to store a burst data. A read/write device is implemented between the memory units to read or write the burst data to the magnetic memory cells passing the read/write device. A flag unit records a flag value for each memory track or each memory unit to indicate whether the burst data is located at a first side or a second side of the read/write device. A current unit provides an operation current to the magnetic memory track according to the flag value to move the domain walls to pass the read/write device. After the read/write device reads or writes the burst data, the flag value is updated.

Abstract translation: 磁移位寄存器存储器至少包括磁存储器轨道，其中多个畴壁将存储器轨道分离成多个磁畴以用作磁存储器单元。 固定数量的磁存储单元形成存储单元以存储突发数据。 在存储器单元之间实现读/写设备，以将突发数据读取或写入到通过读/写设备的磁存储单元。 标志单元记录每个存储器轨道或每个存储器单元的标志值，以指示突发数据是位于读/写设备的第一侧还是第二侧。 当前单元根据标志值向磁存储器轨道提供操作电流以移动畴壁以通过读/写设备。 在读/写设备读/写突发数据之后，更新标志值。

公开(公告)号：US08633555B2

公开(公告)日：2014-01-21

申请号：US13451553

申请日：2012-04-20

Applicant: Kuei-Hung Shen

Inventor： Kuei-Hung Shen

IPC: H01L29/82 ,  H01L21/02 ,  G11C11/22 ,  G11C11/15

CPC classification number: G01R33/098

Abstract: A magnetic sensor suitable for sensing an external magnetic field includes a magnetic tunnel junction (MTJ) device. The MTJ device is used to sense an out-of-plane (Z-axis) component of the external magnetic field at a perpendicular direction to the MTJ device. The MTJ device includes a first pinned magnetic layer, a tunnel layer and a magnetic sensing layer. The first pinned magnetic layer has a pinned magnetization perpendicular to the first pinned magnetic layer. The tunnel layer is disposed on the first pinned magnetic layer. The magnetic sensing layer is disposed on the tunnel layer. The magnetic sensing layer has a critical thickness set to be within a range having a superparamagnetic property, in which an out-of-plane (Z-axis) magnetic sensitivity is larger than an in-plane (X-axis, Y-axis) magnetic sensitivity. The first pinned magnetic layer, the tunnel layer and the magnetic sensing layer are stacked in a forward sequence or a reverse sequence.

Abstract translation: 适用于感测外部磁场的磁传感器包括磁隧道结（MTJ）装置。 MTJ装置用于在与MTJ装置垂直的方向上检测外部磁场的平面外（Z轴）分量。 MTJ装置包括第一固定磁性层，隧道层和磁感应层。 第一钉扎磁性层具有垂直于第一固定磁性层的钉扎磁化。 隧道层设置在第一钉扎磁性层上。 磁感应层设置在隧道层上。 磁感应层的临界厚度被设定在具有超顺磁性的范围内，其中外平面（Z轴）磁敏度大于平面内（X轴，Y轴） 磁敏感。 第一钉扎磁性层，隧道层和磁感测层以正向或反向顺序堆叠。

公开(公告)号：US20070249083A1

公开(公告)日：2007-10-25

申请号：US11819063

申请日：2007-06-25

Applicant: Chien-Ming Li ,  Wen-Han Wang ,  Kuei-Hung Shen

Inventor： Chien-Ming Li ,  Wen-Han Wang ,  Kuei-Hung Shen

IPC: H01L31/0376

CPC classification number: G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/003 ,  G11C13/0069 ,  G11C2013/008 ,  G11C2013/009 ,  G11C2213/78 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/165

Abstract: A multilevel phase-change memory, operating method and manufacturing method thereof. The phase-change memory includes two phase-change layers and electrodes, which are configured in a parallel structure to form a memory cell. A voltage-drive mode is employed to control and drive the memory such that multilevel memory states may be achieved by imposing different voltage levels. The provided multilevel phase-change memory has more bits and higher capacity than that of the memory with a single phase-change layer.

Abstract translation: 多级相变存储器，其操作方法及其制造方法。 相变存储器包括两个相变层和电极，其被配置成并联结构以形成存储单元。 使用电压驱动模式来控制和驱动存储器，使得可以通过施加不同的电压电平来实现多电平存储器状态。 所提供的多电平相变存储器具有比具有单个相变层的存储器更多的位和更高的容量。