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公开(公告)号：US11005004B2
公开(公告)日：2021-05-11
申请号：US16158783
申请日：2018-10-12
Inventor： Yong-Hoon Cho , Youngchul Sim , Kie Young Woo
Abstract: Provided is a micro light emitting diode (LED) structure including an n-type semiconductor substrate layer, a light emitting structure layer formed on the n-type semiconductor substrate layer, and a p-type semiconductor layer formed on the light emitting structure layer, wherein the light emitting structure layer includes an arrangement of light emitting structures in which active layers including In and Ga are formed on tops thereof, wherein the light emitting structure layer forms at least three distinctive regions each including a single light emitting structure or a plurality of light emitting structures, the distinctive regions configured to emit light of at least two different wavelengths, the distinctive regions are controllable to emit light individually, and the distinctive regions are different in at least one of sizes of base faces, heights, and center-to-center distances of the lighting emitting structures of the regions.
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公开(公告)号：US10586887B2
公开(公告)日：2020-03-10
申请号：US16036556
申请日：2018-07-16
Inventor： Yong-Hoon Cho , Hwanseop Yeo , JongHoi Cho
IPC: H01L33/06 , H01L33/00 , H01L33/08 , H01L33/24 , H01L33/38 , G06F21/31 , H01L33/32 , G06N10/00 , H01L27/15
Abstract: Disclosed are a deterministic quantum emitter operating at room temperature in an optical communication wavelength using the intersubband transition of a nitride-based semiconductor quantum dot, a method of fabricating the same, and an operating method thereof. A method of fabricating a quantum emitter includes forming a three-dimensional (3-D) structure in a substrate, forming an n type-doped thin film at the upper part of the 3-D structure, forming a quantum dot over the n type-doped thin film, regrowing the 3-D structure in order to use the 3-D structure as an optical structure, depositing a metal thin film at a vertex of the 3-D structure, and connecting electrodes to an n type-doped area and the metal thin film, respectively. A carrier may be captured in the quantum dot by applying a voltage to the connected electrodes. The quantum emitter may be driven by optically exciting the quantum dot.
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公开(公告)号：US20150002844A1
公开(公告)日：2015-01-01
申请号：US14137967
申请日：2013-12-20
Inventor： Yongkeun Park , Jung-Hoon Park , Yong-Hoon Cho , Chunghyun Park
IPC: G01N21/49
CPC classification number: G01N21/4788 , G01N21/45 , G01N21/49 , G01N2021/479 , G01N2201/0675 , G01Q60/18 , G01Q60/22
Abstract: An apparatus for manipulating surface near-field light resulting from light emitted from a light source that passes through a scattering layer is disclosed. Also, a method of finding a phase of incident light to cause constructive interference at a target spot using light scattering to manipulate the surface near-field.
Abstract translation: 公开了一种用于操纵从通过散射层的光源发射的光产生的表面近场光的装置。 此外，发现入射光的相位以使用光散射在目标点造成建设性干扰以操纵表面近场的方法。
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公开(公告)号：US20190027645A1
公开(公告)日：2019-01-24
申请号：US16036556
申请日：2018-07-16
Inventor： Yong-Hoon Cho , Hwanseop Yeo , JongHoi Cho
CPC classification number: H01L33/06 , G06F21/31 , G06N10/00 , H01L27/153 , H01L33/007 , H01L33/0075 , H01L33/08 , H01L33/24 , H01L33/32 , H01L33/387 , H01L2933/0016
Abstract: Disclosed are a deterministic quantum emitter operating at room temperature in an optical communication wavelength using the intersubband transition of a nitride-based semiconductor quantum dot, a method of fabricating the same, and an operating method thereof. A method of fabricating a quantum emitter includes forming a three-dimensional (3-D) structure in a substrate, forming an n type-doped thin film at the upper part of the 3-D structure, forming a quantum dot over the n type-doped thin film, regrowing the 3-D structure in order to use the 3-D structure as an optical structure, depositing a metal thin film at a vertex of the 3-D structure, and connecting electrodes to an n type-doped area and the metal thin film, respectively. A carrier may be captured in the quantum dot by applying a voltage to the connected electrodes. The quantum emitter may be driven by optically exciting the quantum dot.
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Patent Agency Ranking
公开(公告)号：US11990559B2
公开(公告)日：2024-05-21
申请号：US17025527
申请日：2020-09-18
Inventor： Yong-Hoon Cho , Young Chul Sim
IPC: H01L33/00 , H01L25/075
CPC classification number: H01L33/0095 , H01L25/0753 , H01L2933/0058 , H01L2933/0066
Abstract: A method of manufacturing a micro-light emitting diode (LED)-based display, and a micro-LED-based display are provided. The method includes forming a micro-LED partitioned in the unit of a plurality of sub-pixels on a semiconductor substrate, planarizing the micro-LED by forming a planarization layer on at least a portion of the micro-LED, forming a via hole in the planarization layer, and integrating the micro-LED and a thin-film transistor (TFT) for an operation of the sub-pixels by arranging and depositing the TFT on the planarized micro-LED.
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6.发明申请公开(公告)号：US20190123235A1
公开(公告)日：2019-04-25
申请号：US16158783
申请日：2018-10-12
Inventor： Yong-Hoon Cho , Youngchul Sim , Kie Young Woo
Abstract: Provided is a micro light emitting diode (LED) structure including an n-type semiconductor substrate layer, a light emitting structure layer formed on the n-type semiconductor substrate layer, and a p-type semiconductor layer formed on the light emitting structure layer, wherein the light emitting structure layer includes an arrangement of light emitting structures in which active layers including In and Ga are formed on tops thereof, wherein the light emitting structure layer forms at least three distinctive regions each including a single light emitting structure or a plurality of light emitting structures, the distinctive regions configured to emit light of at least two different wavelengths, the distinctive regions are is controllable to emit light individually, and the distinctive regions are different in at least one of sizes of base faces, heights, and center-to-center distances of the lighting emitting structures of the regions.
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公开(公告)号：US09857302B2
公开(公告)日：2018-01-02
申请号：US15009608
申请日：2016-01-28
Inventor： Yongkeun Park , Jung-Hoon Park , Yong-Hoon Cho , Chunghyun Park
CPC classification number: G01N21/4788 , G01N21/45 , G01N21/49 , G01N2021/479 , G01N2201/0675 , G01Q60/18 , G01Q60/22
Abstract: An apparatus for manipulating surface near-field light resulting from light emitted from a light source that passes through a scattering layer is disclosed. Also, a method of finding a phase of incident light to cause constructive interference at a target spot using light scattering to manipulate the surface near-field.
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公开(公告)号：US20160146731A1
公开(公告)日：2016-05-26
申请号：US15009608
申请日：2016-01-28
Inventor： Yongkeun Park , Jung-Hoon Park , Yong-Hoon Cho , Chunghyun Park
CPC classification number: G01N21/4788 , G01N21/45 , G01N21/49 , G01N2021/479 , G01N2201/0675 , G01Q60/18 , G01Q60/22
Abstract: An apparatus for manipulating surface near-field light resulting from light emitted from a light source that passes through a scattering layer is disclosed. Also, a method of finding a phase of incident light to cause constructive interference at a target spot using light scattering to manipulate the surface near-field.
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公开(公告)号：US09279764B2
公开(公告)日：2016-03-08
申请号：US14137967
申请日：2013-12-20
Inventor： Yongkeun Park , Jung-Hoon Park , Yong-Hoon Cho , Chunghyun Park
CPC classification number: G01N21/4788 , G01N21/45 , G01N21/49 , G01N2021/479 , G01N2201/0675 , G01Q60/18 , G01Q60/22
Abstract: An apparatus for manipulating surface near-field light resulting from light emitted from a light source that passes through a scattering layer is disclosed. Also, a method of finding a phase of incident light to cause constructive interference at a target spot using light scattering to manipulate the surface near-field.
Abstract translation: 公开了一种用于操纵从通过散射层的光源发射的光产生的表面近场光的装置。 此外，发现入射光的相位以使用光散射在目标点造成建设性干扰以操纵表面近场的方法。
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