公开(公告)号：US09129811B2

公开(公告)日：2015-09-08

申请号：US14132071

申请日：2013-12-18

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Byung Jin Cho ,  Jeong Hun Mun

IPC: H01L21/20 ,  H01L21/02 ,  H01L29/16 ,  H01L45/00

CPC classification number: H01L21/02664 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02658 ,  H01L29/1606 ,  H01L45/1616

Abstract: This invention relates to a method and board for forming a graphene layer, and more particularly, to a method of forming a high-quality graphene layer using high pressure annealing and to a board used therein. The method of forming the graphene layer includes forming a reaction barrier layer on a substrate layer, forming a metal catalyst layer which functions as a catalyst for forming the graphene layer on the reaction barrier layer, subjecting a board including a stack of the layers to high pressure annealing, and growing the graphene layer on the metal catalyst layer. This board is subjected to high pressure annealing before growth of the graphene layer, and the reaction barrier layer is formed using a material having high adhesion energy to the metal catalyst layer so as to suppress migration of metal catalyst atoms.

Abstract translation: 本发明涉及用于形成石墨烯层的方法和板，更具体地说，涉及一种使用高压退火形成高品质石墨烯层的方法及其中使用的板。 形成石墨烯层的方法包括在基材层上形成反应阻挡层，形成用作在反应阻挡层上形成石墨烯层的催化剂的金属催化剂层，使包含层叠体的基板高 并且在金属催化剂层上生长石墨烯层。 该板在石墨烯层生长之前进行高压退火，并且使用对金属催化剂层具有高粘附能的材料形成反应阻挡层，以便抑制金属催化剂原子的迁移。

公开(公告)号：US09428829B2

公开(公告)日：2016-08-30

申请号：US14132121

申请日：2013-12-18

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Byung Jin Cho ,  Jeong Hun Mun

IPC: C23C16/26 ,  C23C16/40 ,  C01B31/04 ,  C23C14/02

CPC classification number: C23C16/26 ,  C01B32/186 ,  C23C14/024 ,  C23C14/025 ,  Y10T428/30 ,  Y10T428/31678

Abstract: A method of forming a high-quality graphene layer including forming a board layer; forming a stress reduction layer on the board layer; forming a metal catalyst layer on the stress reduction layer, the metal catalyst layer functioning as a catalyst for forming the graphene layer; and growing a graphene layer on the metal catalyst layer. The stress reduction layer reduces the stress of the metal thin film, thus, improving crystallinity and surface roughness of the metal thin film, and thereby effectively forming a high-quality graphene layer.

Abstract translation: 一种形成高质量石墨烯层的方法，包括形成板层; 在所述基板层上形成应力减小层; 在所述应力还原层上形成金属催化剂层，所述金属催化剂层用作形成所述石墨烯层的催化剂; 并在金属催化剂层上生长石墨烯层。 应力降低层降低金属薄膜的应力，从而提高金属薄膜的结晶度和表面粗糙度，有效地形成高品质的石墨烯层。

公开(公告)号：US20140299975A1

公开(公告)日：2014-10-09

申请号：US14132071

申请日：2013-12-18

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Byung Jin Cho ,  Jeong Hun Mun

IPC: H01L21/02 ,  H01L29/16

CPC classification number: H01L21/02664 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02658 ,  H01L29/1606 ,  H01L45/1616

Abstract: This invention relates to a method and board for forming a graphene layer, and more particularly, to a method of forming a high-quality graphene layer using high pressure annealing and to a board used therein. The method of forming the graphene layer includes forming a reaction barrier layer on a substrate layer, forming a metal catalyst layer which functions as a catalyst for forming the graphene layer on the reaction barrier layer, subjecting a board including a stack of the layers to high pressure annealing, and growing the graphene layer on the metal catalyst layer. This board is subjected to high pressure annealing before growth of the graphene layer, and the reaction barrier layer is formed using a material having high adhesion energy to the metal catalyst layer so as to suppress migration of metal catalyst atoms.

Abstract translation: 本发明涉及用于形成石墨烯层的方法和板，更具体地说，涉及一种使用高压退火形成高品质石墨烯层的方法及其中使用的板。 形成石墨烯层的方法包括在基材层上形成反应阻挡层，形成用作在反应阻挡层上形成石墨烯层的催化剂的金属催化剂层，使包含层叠层的基板高 并且在金属催化剂层上生长石墨烯层。 该板在石墨烯层生长之前进行高压退火，并且使用对金属催化剂层具有高粘附能的材料形成反应阻挡层，以便抑制金属催化剂原子的迁移。

公开(公告)号：US20140295080A1

公开(公告)日：2014-10-02

申请号：US14132121

申请日：2013-12-18

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Byung Jin Cho ,  Jeong Hun Mun

IPC: C23C16/26

CPC classification number: C23C16/26 ,  C01B32/186 ,  C23C14/024 ,  C23C14/025 ,  Y10T428/30 ,  Y10T428/31678

Abstract: This invention relates to a board and method for forming a graphene layer, and more particularly, to a board for use in forming a graphene layer, which has a structure able to improve properties of the graphene layer formed thereon, and to a method of forming a high-quality graphene layer using the same. The board of the invention includes a board layer, a metal catalyst layer formed on the board layer and functioning as a catalyst for forming the graphene layer, and a stress reduction layer disposed between the board layer and the metal catalyst layer so as to reduce stress of the metal catalyst layer, wherein the stress reduction layer able to reduce stress of the metal thin film is provided, thus improving crystallinity and surface roughness of the metal thin film, thereby effectively forming a high-quality graphene layer.

Abstract translation: 本发明涉及一种用于形成石墨烯层的板和方法，更具体地，涉及一种用于形成石墨烯层的板，其具有能够改善其上形成的石墨烯层的性能的结构，以及形成方法 使用其的高品质石墨烯层。 本发明的电路板包括：基板层，形成在电路板层上的金属催化剂层，用作用于形成石墨烯层的催化剂，以及设置在电路板层和金属催化剂层之间的应力降低层，以减少应力 的金属催化剂层，其中提供能够降低金属薄膜的应力的应力降低层，从而提高金属薄膜的结晶度和表面粗糙度，从而有效地形成高质量的石墨烯层。