公开(公告)号：US10084128B2

公开(公告)日：2018-09-25

申请号：US15426719

申请日：2017-02-07

Applicant: Korea Advanced Institute of Science And Technology ,  CENTER FOR INTEGRATED SMART SENSORS FOUNDATION

Inventor： Yang-Kyu Choi ,  Jun-Young Park ,  Chang-Hoon Jeon

IPC: H01L29/06 ,  H03H9/24 ,  H01L29/775 ,  H01L21/762 ,  H01L27/088 ,  G11C16/04 ,  H01L27/11 ,  H01L21/74 ,  H01L29/78 ,  H01L29/792 ,  H01L45/00 ,  H01L29/423 ,  H03K17/687

CPC classification number: H01L45/1206 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/42376 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L45/1226 ,  H03K17/687

Abstract: Provided is a method for increasing a driving current of a junctionless transistor that includes: a substrate; a source region and a drain region which are formed on the substrate and are doped with the same type of dopant; a nanowire channel region which connects the source region and the drain source and is doped with the same type dopant as that of the source region and the drain region; a gate insulation layer which is formed to surround the nanowire channel region; and a gate electrode which is formed on the gate insulation layer and is formed to surround the nanowire channel region. An amount of current flowing through the nanowire channel region is increased by joule heat generated by applying a voltage to the source region and the drain region.

公开(公告)号：US20180102477A1

公开(公告)日：2018-04-12

申请号：US15426719

申请日：2017-02-07

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Yang-Kyu Choi ,  Jun-Young Park ,  Chang-Hoon Jeon

IPC: H01L45/00 ,  H01L29/06 ,  H01L29/423 ,  H03K17/687

CPC classification number: H01L45/1206 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/42376 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L35/00 ,  H01L45/1226 ,  H03K17/687

Abstract: Provided is a method for increasing a driving current of a junctionless transistor that includes: a substrate; a source region and a drain region which are formed on the substrate and are doped with the same type of dopant; a nanowire channel region which connects the source region and the drain source and is doped with the same type dopant as that of the source region and the drain region; a gate insulation layer which is formed to surround the nanowire channel region; and a gate electrode which is formed on the gate insulation layer and is formed to surround the nanowire channel region. An amount of current flowing through the nanowire channel region is increased by joule heat generated by applying a voltage to the source region and the drain region.