摘要:
A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH3, N2, and SiH4, and H2 gas or a mixture of H2 and He. The first region is deposited by setting the flow-rate ratio NH3/SiH4 in a range from 11 to 14 and the second region is deposited by setting the flow-rate ratio NH3/SiH4 to be equal to or less than 4. It is thus possible to provide a thin-film transistor having excellent characteristics and high reliability, a method of manufacturing the same, and a display device including the thin-film transistor mounted thereon.
摘要:
An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.
摘要:
An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.
摘要:
A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.
摘要:
A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.
摘要:
A linear light source includes an LED, an LED drive circuit substrate disposed on a frame, a flexible substrate on which an electric supply pattern is formed and to which the LED is attached at one end and the LED drive circuit is attached at the other end, a linear light guide and a heat sink. The one end of the flexible substrate is attached to the heat sink. A face of the heat sink covered by the LED and a face of the one end of the flexible substrate are perpendicular to the light guide and to a substrate face of the LED drive circuit substrate, while a face of the other end of the flexible substrate is parallel to the light guide and a substrate face of the LED drive circuit substrate. A bent portion is formed between the two ends of the flexible substrate.
摘要:
The lamp lighting circuit prevents a malfunction in which a lamp is tuned on momentarily during an initial stage of the power input. When the power source is lit, the malfunction prevention circuit prevents the activation of the oscillation circuit and/or the driving circuit 3a until when the output control circuit 5 starts normal operation and outputs the output control signal that controls the lighting/non-lighting of the lamp. When a lamp lighting command is input to the output control circuit, the output of the oscillation circuit is transmitted to the power control element via a driving circuit, and the power control element is driven. Consequently a voltage is generated on the secondary side coil of a boosting transformer so that the lamp 1 is lit.
摘要:
An ellipticine derivative of the formula [I]: ##STR1## wherein R is a substituted lower alkyl group, a substituted or unsubstituted lower alkoxy group or a heteromonocyclic group, or a pharmaceutically acceptable salt thereof, which show excellent antitumor activity, less side effects, less toxicity and/or high solubility in water and are useful as antitumor agent, and a process for preparing the same.
摘要:
A welding condition monitoring device for monitoring the welding state of a welding work portion by taking an image thereof by an image sensor having a wide dynamic range and capable of taking an image covering a very bright welding portion and relatively dark portion. The monitoring device selectively emphasizes the outputs of the image sensor for any of luminance areas of the image taken by the image sensor using a sensor output characteristic table and can provide an image clearly showing both the very bright welding portion and the dark bead portion with a sufficient contrast allowing an observer to reliably recognize the objects in the image.
摘要:
A rare gas discharge lamp lighting apparatus has a power supply, a transformer, a switching element which is in series connected to the power supply and a primary side of the transformer, a rare gas discharge lamp connected on a secondary side of the transformer, and an input terminal for inputting a lamp lighting signal, a controlling circuit for outputting a controlling signal to the switching circuit by calculating at least one of output voltage, output current and output power, and an operating voltage input terminal to which voltage is impressed to initiate an operation of the controlling circuit based on the lamp lighting signal, wherein a delay element is provided between the input terminal and the operating voltage input terminal.