公开(公告)号：US08507915B2

公开(公告)日：2013-08-13

申请号：US13307787

申请日：2011-11-30

申请人： Karen A. Nummy ,  Chengwen Pei ,  Werner A. Rausch ,  Geng Wang

发明人： Karen A. Nummy ,  Chengwen Pei ,  Werner A. Rausch ,  Geng Wang

IPC分类号： H01L29/94

CPC分类号： H01L21/4846 ,  H01L21/82 ,  H01L27/10867 ,  H01L29/66181 ,  H01L29/66636 ,  H01L29/945

摘要： A trench is formed in a semiconductor substrate, and is filled with a node dielectric layer and at least one conductive material fill portion that functions as an inner electrode. The at least one conductive material fill portion includes a doped polycrystalline semiconductor fill portion. A gate stack for an access transistor is formed on the semiconductor substrate, and a gate spacer is formed around the gate stack. A source/drain trench is formed between an outer sidewall of the gate spacer and a sidewall of the doped polycrystalline semiconductor fill portion. An epitaxial source region and a polycrystalline semiconductor material portion are simultaneously formed by a selective epitaxy process such that the epitaxial source region and the polycrystalline semiconductor material portion contact each other without a gap therebetween. The polycrystalline semiconductor material portion provides a robust low resistance conductive path between the source region and the inner electrode.

公开(公告)号：US20130134490A1

公开(公告)日：2013-05-30

申请号：US13307787

申请日：2011-11-30

申请人： Karen A. Nummy ,  Chengwen Pei ,  Werner A. Rausch ,  Geng Wang

发明人： Karen A. Nummy ,  Chengwen Pei ,  Werner A. Rausch ,  Geng Wang

IPC分类号： H01L29/94 ,  H01L21/8242

CPC分类号： H01L21/4846 ,  H01L21/82 ,  H01L27/10867 ,  H01L29/66181 ,  H01L29/66636 ,  H01L29/945

摘要： A trench is formed in a semiconductor substrate, and is filled with a node dielectric layer and at least one conductive material fill portion that functions as an inner electrode. The at least one conductive material fill portion includes a doped polycrystalline semiconductor fill portion. A gate stack for an access transistor is formed on the semiconductor substrate, and a gate spacer is formed around the gate stack. A source/drain trench is formed between an outer sidewall of the gate spacer and a sidewall of the doped polycrystalline semiconductor fill portion. An epitaxial source region and a polycrystalline semiconductor material portion are simultaneously formed by a selective epitaxy process such that the epitaxial source region and the polycrystalline semiconductor material portion contact each other without a gap therebetween. The polycrystalline semiconductor material portion provides a robust low resistance conductive path between the source region and the inner electrode.

公开(公告)号：US20120083092A1

公开(公告)日：2012-04-05

申请号：US13323033

申请日：2011-12-12

申请人： Herbert L. Ho ,  Naoyoshi Kusaba ,  Karen A. Nummy ,  Carl J. Radens ,  Ravi M. Todi ,  Geng Wang

发明人： Herbert L. Ho ,  Naoyoshi Kusaba ,  Karen A. Nummy ,  Carl J. Radens ,  Ravi M. Todi ,  Geng Wang

IPC分类号： H01L21/02

CPC分类号： H01L27/10823 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/10829 ,  H01L27/1087 ,  H01L27/10897 ,  H01L27/1203 ,  H01L29/0653 ,  H01L29/66181

摘要： A method for forming a memory device in a semiconductor on insulator substrate is provided, in which a protective oxide that is present on the sidewalls of the trench protects the first semiconductor layer, i.e., SOI layer, of the semiconductor on insulator substrate during bottle etching of the trench. In one embodiment, the protective oxide reduces back channel effects of the transistors to the memory devices in the trench that are formed in the semiconductor on insulator substrate. In another embodiment, a thermal oxidation process increases the thickness of the buried dielectric layer of a bonded semiconductor on insulator substrate by oxidizing the bonded interface between the buried dielectric layer and at least one semiconductor layers of the semiconductor on insulator substrate. The increased thickness of the buried dielectric layer may reduce back channel effects in devices formed on the substrate having trench memory structures.

摘要翻译： 提供了一种在半导体绝缘体衬底上形成存储器件的方法，其中存在于沟槽的侧壁上的保护氧化物在瓶蚀刻期间保护半导体绝缘体衬底上的第一半导体层即SOI层 的沟槽。 在一个实施例中，保护氧化物减少晶体管对形成在绝缘体上半导体衬底上的沟槽中的存储器件的反向沟道效应。 在另一个实施例中，热氧化工艺通过氧化掩埋介电层和绝缘体上半导体衬底的至少一个半导体层之间的键合界面来增加绝缘体衬底上键合的半导体的掩埋介电层的厚度。 掩埋介电层的增加的厚度可以减少在具有沟槽存储器结构的衬底上形成的器件中的反向沟道效应。

公开(公告)号：US09059320B2

公开(公告)日：2015-06-16

申请号：US13408187

申请日：2012-02-29

申请人： Herbert L. Ho ,  Naoyoshi Kusaba ,  Karen A. Nummy ,  Carl J. Radens ,  Ravi M. Todi ,  Geng Wang

发明人： Herbert L. Ho ,  Naoyoshi Kusaba ,  Karen A. Nummy ,  Carl J. Radens ,  Ravi M. Todi ,  Geng Wang

IPC分类号： H01L27/108 ,  H01L29/94 ,  H01L21/84 ,  H01L21/762 ,  H01L29/66

CPC分类号： H01L27/10823 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/10829 ,  H01L27/1087 ,  H01L27/10897 ,  H01L27/1203 ,  H01L29/0653 ,  H01L29/66181

摘要： A memory device is provided including a semiconductor on insulator (SOI) substrate including a first semiconductor layer atop a buried dielectric layer, wherein the buried dielectric layer is overlying a second semiconductor layer. A capacitor is present in a trench, wherein the trench extends from an upper surface of the first semiconductor layer through the buried dielectric layer and extends into the second semiconductor layer. A protective oxide is present in a void that lies adjacent the first semiconductor layer, and a pass transistor is present atop the semiconductor on insulator substrate in electrical communication with the capacitor.

摘要翻译： 提供了一种存储器件，其包括绝缘体上半导体（SOI）衬底，其包括位于掩埋介电层顶部的第一半导体层，其中所述掩埋介电层覆盖在第二半导体层上。 电容器存在于沟槽中，其中沟槽从第一半导体层的上表面延伸穿过埋入介质层并延伸到第二半导体层。 保护性氧化物存在于位于第一半导体层附近的空隙中，并且传导晶体管存在于与电容器电连通的绝缘体上半导体衬底上。

公开(公告)号：US08168507B2

公开(公告)日：2012-05-01

申请号：US12545116

申请日：2009-08-21

申请人： Herbert L. Ho ,  Naoyoshi Kusaba ,  Karen A. Nummy ,  Carl J. Radens ,  Ravi M. Todi ,  Geng Wang

发明人： Herbert L. Ho ,  Naoyoshi Kusaba ,  Karen A. Nummy ,  Carl J. Radens ,  Ravi M. Todi ,  Geng Wang

IPC分类号： H01L21/20

CPC分类号： H01L27/10823 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/10829 ,  H01L27/1087 ,  H01L27/10897 ,  H01L27/1203 ,  H01L29/0653 ,  H01L29/66181

摘要： A method for forming a memory device in a semiconductor on insulator substrate is provided, in which a protective oxide that is present on the sidewalls of the trench protects the first semiconductor layer, i.e., SOI layer, of the semiconductor on insulator substrate during bottle etching of the trench. In one embodiment, the protective oxide reduces back channel effects of the transistors to the memory devices in the trench that are formed in the semiconductor on insulator substrate. In another embodiment, a thermal oxidation process increases the thickness of the buried dielectric layer of a bonded semiconductor on insulator substrate by oxidizing the bonded interface between the buried dielectric layer and at least one semiconductor layers of the semiconductor on insulator substrate. The increased thickness of the buried dielectric layer may reduce back channel effects in devices formed on the substrate having trench memory structures.

摘要翻译： 提供了一种在半导体绝缘体衬底上形成存储器件的方法，其中存在于沟槽的侧壁上的保护氧化物在瓶蚀刻期间保护半导体绝缘体衬底上的第一半导体层即SOI层 的沟槽。 在一个实施例中，保护氧化物减少晶体管对形成在绝缘体上半导体衬底上的沟槽中的存储器件的反向沟道效应。 在另一个实施例中，热氧化工艺通过氧化掩埋介电层和绝缘体上半导体衬底的至少一个半导体层之间的键合界面来增加绝缘体衬底上键合的半导体的掩埋介电层的厚度。 掩埋介电层的增加的厚度可以减少在具有沟槽存储器结构的衬底上形成的器件中的反向沟道效应。

公开(公告)号：US20120175694A1

公开(公告)日：2012-07-12

申请号：US13408187

申请日：2012-02-29

申请人： Herbert L. Ho ,  Naoyoshi Kusaba ,  Karen A. Nummy ,  Carl J. Radens ,  Ravi M. Todi ,  Geng Wang

发明人： Herbert L. Ho ,  Naoyoshi Kusaba ,  Karen A. Nummy ,  Carl J. Radens ,  Ravi M. Todi ,  Geng Wang

IPC分类号： H01L27/108

CPC分类号： H01L27/10823 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/10829 ,  H01L27/1087 ,  H01L27/10897 ,  H01L27/1203 ,  H01L29/0653 ,  H01L29/66181

摘要： A memory device is provided including a semiconductor on insulator (SOI) substrate including a first semiconductor layer atop a buried dielectric layer, wherein the buried dielectric layer is overlying a second semiconductor layer. A capacitor is present in a trench, wherein the trench extends from an upper surface of the first semiconductor layer through the buried dielectric layer and extends into the second semiconductor layer. A protective oxide is present in a void that lies adjacent the first semiconductor layer, and a pass transistor is present atop the semiconductor on insulator substrate in electrical communication with the capacitor.

摘要翻译： 提供了一种存储器件，其包括绝缘体上半导体（SOI）衬底，其包括位于掩埋介电层顶部的第一半导体层，其中所述掩埋介电层覆盖在第二半导体层上。 电容器存在于沟槽中，其中沟槽从第一半导体层的上表面延伸穿过埋入介质层并延伸到第二半导体层。 保护性氧化物存在于位于第一半导体层附近的空隙中，并且传导晶体管存在于与电容器电连通的绝缘体上半导体衬底上。

公开(公告)号：US08298907B2

公开(公告)日：2012-10-30

申请号：US13323033

申请日：2011-12-12

申请人： Herbert L. Ho ,  Naoyoshi Kusaba ,  Karen A. Nummy ,  Carl J. Radens ,  Ravi M. Todi ,  Geng Wang

发明人： Herbert L. Ho ,  Naoyoshi Kusaba ,  Karen A. Nummy ,  Carl J. Radens ,  Ravi M. Todi ,  Geng Wang

IPC分类号： H01L21/20

CPC分类号： H01L27/10823 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/10829 ,  H01L27/1087 ,  H01L27/10897 ,  H01L27/1203 ,  H01L29/0653 ,  H01L29/66181

摘要： A method for forming a memory device in a semiconductor on insulator substrate is provided, in which a protective oxide that is present on the sidewalls of the trench protects the first semiconductor layer, i.e., SOI layer, of the semiconductor on insulator substrate during bottle etching of the trench. In one embodiment, the protective oxide reduces back channel effects of the transistors to the memory devices in the trench that are formed in the semiconductor on insulator substrate. In another embodiment, a thermal oxidation process increases the thickness of the buried dielectric layer of a bonded semiconductor on insulator substrate by oxidizing the bonded interface between the buried dielectric layer and at least one semiconductor layers of the semiconductor on insulator substrate. The increased thickness of the buried dielectric layer may reduce back channel effects in devices formed on the substrate having trench memory structures.

摘要翻译： 提供了一种在半导体绝缘体衬底上形成存储器件的方法，其中存在于沟槽的侧壁上的保护氧化物在瓶蚀刻期间保护半导体绝缘体衬底上的第一半导体层即SOI层 的沟槽。 在一个实施例中，保护氧化物减少晶体管对形成在绝缘体上半导体衬底上的沟槽中的存储器件的反向沟道效应。 在另一个实施例中，热氧化工艺通过氧化掩埋介电层和绝缘体上半导体衬底的至少一个半导体层之间的键合界面来增加绝缘体衬底上键合的半导体的掩埋介电层的厚度。 掩埋介电层的增加的厚度可以减少在具有沟槽存储器结构的衬底上形成的器件中的反向沟道效应。

公开(公告)号：US20110042731A1

公开(公告)日：2011-02-24

申请号：US12545116

申请日：2009-08-21

申请人： Herbert L. Ho ,  Naoyoshi Kusaba ,  Karen A. Nummy ,  Carl J. Radens ,  Ravi M. Todi ,  Geng Wang

发明人： Herbert L. Ho ,  Naoyoshi Kusaba ,  Karen A. Nummy ,  Carl J. Radens ,  Ravi M. Todi ,  Geng Wang

IPC分类号： H01L27/108 ,  H01L21/28 ,  H01L21/8242

CPC分类号： H01L27/10823 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/10829 ,  H01L27/1087 ,  H01L27/10897 ,  H01L27/1203 ,  H01L29/0653 ,  H01L29/66181

摘要： A method for forming a memory device in a semiconductor on insulator substrate is provided, in which a protective oxide that is present on the sidewalls of the trench protects the first semiconductor layer, i.e., SOI layer, of the semiconductor on insulator substrate during bottle etching of the trench. In one embodiment, the protective oxide reduces back channel effects of the transistors to the memory devices in the trench that are formed in the semiconductor on insulator substrate. In another embodiment, a thermal oxidation process increases the thickness of the buried dielectric layer of a bonded semiconductor on insulator substrate by oxidizing the bonded interface between the buried dielectric layer and at least one semiconductor layers of the semiconductor on insulator substrate. The increased thickness of the buried dielectric layer may reduce back channel effects in devices formed on the substrate having trench memory structures.

摘要翻译： 提供了一种在半导体绝缘体衬底上形成存储器件的方法，其中存在于沟槽的侧壁上的保护氧化物在瓶蚀刻期间保护半导体绝缘体衬底上的第一半导体层即SOI层 的沟槽。 在一个实施例中，保护氧化物减少晶体管对形成在绝缘体上半导体衬底上的沟槽中的存储器件的反向沟道效应。 在另一个实施例中，热氧化工艺通过氧化掩埋介电层和绝缘体上半导体衬底的至少一个半导体层之间的键合界面来增加绝缘体衬底上键合的半导体的掩埋介电层的厚度。 掩埋介电层的增加的厚度可以减少在具有沟槽存储器结构的衬底上形成的器件中的反向沟道效应。

公开(公告)号：US09076817B2

公开(公告)日：2015-07-07

申请号：US13198152

申请日：2011-08-04

申请人： Chengwen Pei ,  Geng Wang ,  Yanli Zhang

发明人： Chengwen Pei ,  Geng Wang ,  Yanli Zhang

IPC分类号： H01L29/66 ,  H01L29/51

CPC分类号： H01L29/6656 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636

摘要： A pair of horizontal-step-including trenches are formed in a semiconductor layer by forming a pair of first trenches having a first depth around a gate structure on the semiconductor layer, forming a disposable spacer around the gate structure to cover proximal portions of the first trenches, and by forming a pair of second trenches to a second depth greater than the first depth. The disposable spacer is removed, and selective epitaxy is performed to form an integrated epitaxial source and source extension region and an integrated epitaxial drain and drain extension region. A replacement gate structure can be formed after deposition and planarization of a planarization dielectric layer and subsequent removal of the gate structure and laterally expand the gate cavity over expitaxial source and drain extension regions. Alternately, a contact-level dielectric layer can be deposited directly on the integrated epitaxial regions and contact via structures can be formed therein.

摘要翻译： 通过在半导体层上形成围绕栅极结构的第一深度的一对第一沟槽，在半导体层中形成一对水平台阶包含的沟槽，在栅极结构周围形成一次性间隔物，以覆盖第一 并且通过形成大于第一深度的第二深度的一对第二沟槽。 去除一次性间隔物，并进行选择性外延以形成集成的外延源和源极延伸区域以及集成的外延漏极和漏极延伸区域。 可以在平坦化介电层的沉积和平坦化之后形成替代栅极结构，并且随后去除栅极结构并且在外延源极和漏极延伸区域上横向扩展栅极腔。 或者，可以将接触电介质层直接沉积在集成的外延区上，并且可以在其中形成接触通孔结构。

公开(公告)号：US08691697B2

公开(公告)日：2014-04-08

申请号：US12943956

申请日：2010-11-11

申请人： Roger A. Booth, Jr. ,  Kangguo Cheng ,  Joseph Ervin ,  Chengwen Pei ,  Ravi M. Todi ,  Geng Wang

发明人： Roger A. Booth, Jr. ,  Kangguo Cheng ,  Joseph Ervin ,  Chengwen Pei ,  Ravi M. Todi ,  Geng Wang

IPC分类号： H01L21/302 ,  B44C1/22

CPC分类号： H01L21/31056 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139

摘要： A method includes forming patterned lines on a substrate having a predetermined pitch. The method further includes forming spacer sidewalls on sidewalls of the patterned lines. The method further includes forming material in a space between the spacer sidewalls of adjacent patterned lines. The method further includes forming another patterned line from the material by protecting the material in the space between the spacer sidewalls of adjacent patterned lines while removing the spacer sidewalls. The method further includes transferring a pattern of the patterned lines and the another patterned line to the substrate.

摘要翻译： 一种方法包括在具有预定间距的基底上形成图案线。 该方法还包括在图案化线的侧壁上形成间隔壁。 该方法还包括在相邻图案线的间隔壁侧壁之间的空间中形成材料。 该方法还包括通过在相邻图案化线的间隔壁侧壁之间的空间中保护材料同时去除间隔壁侧壁而从该材料形成另一图案化线。 该方法还包括将图案化线和另一图案化线的图案转移到衬底。