公开(公告)号：US20160049289A1

公开(公告)日：2016-02-18

申请号：US14925805

申请日：2015-10-28

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshihiro OGAWA ,  Tatsuhiko KOIDE ,  Shinsuke KIMURA ,  Hisashi OKUCHI ,  Hiroshi TOMITA

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/0206 ,  H01L21/02043 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/67028

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.

Abstract translation: 在一个实施例中，处理半导体衬底的表面的设备包括基板保持和旋转单元，第一至第四供电单元和去除单元。 基板保持旋转单元保持在其表面上形成有凸起图案并使半导体基板旋转的半导体基板。 第一供给单元向半导体基板的表面供给化学品，以清洁半导体基板。 第二供给单元向半导体基板的表面供给纯水，以冲洗半导体基板。 第三供给单元向半导体基板的表面供给防水剂，以在凸形图案的表面上形成防水保护膜。 为了冲洗半导体衬底，第四供应单元将用纯水或酸性水稀释的酒精提供给半导体衬底的表面。 去除单元除去留下凸起图案的防水保护膜。

公开(公告)号：US20160005604A1

公开(公告)日：2016-01-07

申请号：US14481008

申请日：2014-09-09

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yasuhito YOSHIMIZU ,  Mitsuhiro OMURA ,  Hisashi OKUCHI ,  Satoshi WAKATSUKI ,  Tsubasa IMAMURA

IPC: H01L21/033

CPC classification number: H01L21/0338 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/32051 ,  H01L21/32139 ,  H01L21/76816

Abstract: According to an embodiment, a manufacturing method of a semiconductor device includes: forming a first film on a processing target by using a first material; forming a second film on the first film by using a second material; selectively removing the second and first films to provide an opening pierced in the second and first films; selectively forming a metal film on an inner surface of the opening in the first film; and processing the processing target by using the metal film as a mask.

Abstract translation: 根据实施例，半导体器件的制造方法包括：通过使用第一材料在处理对象上形成第一膜; 通过使用第二材料在所述第一膜上形成第二膜; 选择性地去除第二和第一膜以提供在第二和第一膜中刺穿的开口; 在第一膜的开口的内表面上选择性地形成金属膜; 并且通过使用金属膜作为掩模来处理处理目标。

公开(公告)号：US20130249062A1

公开(公告)日：2013-09-26

申请号：US13787269

申请日：2013-03-06

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yasuhito YOSHIMIZU ,  Hisashi OKUCHI ,  Hiroshi TOMITA

IPC: H01L21/02 ,  H01L23/24

CPC classification number: H01L21/02304 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76837 ,  H01L23/24 ,  H01L27/11568 ,  H01L29/66833 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming an embedded film comprises depositing a first layer on a second layer that is disposed on a substrate and includes a material different from materials included in the first layer, forming an aperture through the first layer and into the second layer, the aperture having a side surface that includes an exposed portion of the first layer and an exposed portion of the second layer, bringing a material that includes organic molecules into contact with the exposed portion of the first layer and the exposed portion of the second layer to form a monomolecular film that covers the side surface, and forming the embedded film in the aperture with a material having a high enough affinity to the monomolecular film to substantially fill the aperture.

Abstract translation: 形成嵌入膜的方法包括在布置在基底上的第二层上沉积第一层，并且包括与包含在第一层中的材料不同的材料，形成穿过第一层并进入第二层的孔，孔 具有包括所述第一层的暴露部分和所述第二层的暴露部分的侧表面，使包含有机分子的材料与所述第一层的暴露部分和所述第二层的暴露部分接触形成 覆盖侧表面的单分子膜，并且用具有与单分子膜足够高的亲和力的材料在孔中形成嵌入膜以基本上填充孔。

公开(公告)号：US20140020721A1

公开(公告)日：2014-01-23

申请号：US13941836

申请日：2013-07-15

Applicant: Tokyo Electron Limited ,  Kabushiki Kaisha Toshiba

Inventor： Hidekazu HAYASHI ,  Yohei SATO ,  Hisashi OKUCHI ,  Hiroshi TOMITA ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII ,  Takayuki TOSHIMA

IPC: H01L21/02

CPC classification number: H01L21/02101 ,  B08B7/0021 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/67109

Abstract: A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container. Thereafter, a fluid in the state of a high-pressure fluid or a gas is discharged from the processing container to obtain the substrate in the dried state.

Abstract translation: 一种基材处理方法和装置，用于在将基材输送到处理容器中时防止基材的防干燥含氟有机溶剂的蒸发，并且可以防止处理容器中的含氟有机溶剂的分解。 其表面被第一含氟有机溶剂覆盖的基材被携带到处理容器中。 通过形成第一含氟有机溶剂和第二含氟有机溶剂的混合物的高压流体气氛，第一含氟有机溶剂的沸点低于第一氟 在处理容器中，例如， 通过将第二含氟有机溶剂的高压流体供给到处理容器中。 此后，将处于高压流体或气体状态的流体从处理容器排出，从而获得处于干燥状态的基板。

公开(公告)号：US20140065555A1

公开(公告)日：2014-03-06

申请号：US13787281

申请日：2013-03-06

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yasuhito YOSHIMIZU ,  Hiroshi TOMITA ,  Hisashi OKUCHI

IPC: G03F7/20

CPC classification number: G03F7/20 ,  G03F7/165 ,  G03F7/40

Abstract: According to one embodiment, a manufacturing method includes forming a desired pattern containing an uneven pattern on a substrate, subjecting the surface of the desired pattern to a water repellent treatment, forming a resist film on the desired pattern, performing an exposure treatment to expose the uneven pattern, rinsing the substrate with water, and drying the substrate.

Abstract translation: 根据一个实施例，一种制造方法包括在衬底上形成包含不均匀图案的期望图案，对期望图案的表面进行拒水处理，在期望图案上形成抗蚀剂膜，进行曝光处理以使曝光 不均匀图案，用水冲洗基板，并干燥基板。