Phosphor in inorganic binder for LED applications
    1.
    发明授权
    Phosphor in inorganic binder for LED applications 有权
    无机粘合剂中的荧光粉用于LED应用

    公开(公告)号:US09537047B2

    公开(公告)日:2017-01-03

    申请号:US15132123

    申请日:2016-04-18

    Abstract: A method for fabricating an LED/phosphor structure is described where an array of blue light emitting diode (LED) dies are mounted on a submount wafer. A phosphor powder is mixed with an organic polymer binder, such as an acrylate or nitrocellulose. The liquid or paste mixture is then deposited over the LED dies or other substrate as a substantially uniform layer. The organic binder is then removed by being burned away in air, or being subject to an O2 plasma process, or dissolved, leaving a porous layer of phosphor grains sintered together. The porous phosphor layer is impregnated with a sol-gel (e.g., a sol-gel of TEOS or MTMS) or liquid glass (e.g., sodium silicate or potassium silicate), also known as water glass, which saturates the porous structure. The structure is then heated to cure the inorganic glass binder, leaving a robust glass binder that resists yellowing, among other desirable properties.

    Abstract translation: 描述了一种用于制造LED /磷光体结构的方法,其中蓝色发光二极管(LED)裸片的阵列安装在底座晶片上。 荧光粉与有机聚合物粘合剂如丙烯酸酯或硝化纤维素混合。 然后将液体或糊状混合物沉积在LED管芯或其它基底上,作为基本均匀的层。 然后通过在空气中燃烧或进行O 2等离子体处理或溶解而除去有机粘合剂,留下烧结在一起的多孔磷光体颗粒层。 多孔磷光体层用溶胶 - 凝胶(例如TEOS或MTMS的溶胶 - 凝胶)或饱和多孔结构饱和的液体玻璃(例如硅酸钠或硅酸钾)(也称为水玻璃)浸渍。 然后将该结构加热以固化无机玻璃粘合剂,留下坚固的玻璃粘合剂,其耐受黄变等性能。

    Light emitting device with an optical element and a reflector
    2.
    发明申请
    Light emitting device with an optical element and a reflector 审中-公开
    具有光学元件和反射器的发光器件

    公开(公告)号:US20160087174A1

    公开(公告)日:2016-03-24

    申请号:US14891332

    申请日:2014-05-15

    Abstract: A structure according to embodiments of the invention includes a semiconductor light emitting device and an optical element disposed over the semiconductor light emitting device. The semiconductor light emitting device is disposed in a recess in the optical element. A reflector is disposed on a bottom surface of the optical element. A method according to embodiments of the invention includes disposing a semiconductor light emitting device on a substrate and forming a reflector adjacent the semiconductor light emitting device. An optical element is formed over the semiconductor light emitting device. The semiconductor light emitting device is removed from the substrate.

    Abstract translation: 根据本发明的实施例的结构包括半导体发光器件和设置在半导体发光器件上的光学元件。 半导体发光器件设置在光学元件的凹部中。 反射器设置在光学元件的底表面上。 根据本发明的实施例的方法包括将半导体发光器件设置在衬底上并形成邻近半导体发光器件的反射器。 在半导体发光器件上形成光学元件。 从衬底去除半导体发光器件。

    Wavelength converted light emitting device with small source size

    公开(公告)号:US10090444B2

    公开(公告)日:2018-10-02

    申请号:US15318143

    申请日:2015-06-05

    Abstract: A lighting structure according to embodiments of the invention includes a semiconductor light emitting device and a flat wavelength converting element attached to the semiconductor light emitting device. The flat wavelength converting element includes a wavelength converting layer for absorbing light emitted by the semiconductor light emitting device and emitting light of a different wavelength. The flat wavelength converting element further includes a transparent layer. The wavelength converting layer is formed on the transparent layer.

    WAVELENGTH CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE
    6.
    发明申请
    WAVELENGTH CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    波长转换半导体发光器件

    公开(公告)号:US20160322540A1

    公开(公告)日:2016-11-03

    申请号:US15104196

    申请日:2014-12-16

    Abstract: A structure according to embodiments of the invention includes a light emitting device for emitting light having a first peak wavelength. A wavelength converting layer is disposed in a path of light emitted by the light emitting device. The wavelength converting layer absorbs light emitted by the light emitting device and emits light having a second peak wavelength. The wavelength converting layer includes a mixture of a wavelength converting material, a transparent material, and an adhesive material, wherein the adhesive material is no more than 15% of the weight of the wavelength converting layer.

    Abstract translation: 根据本发明的实施例的结构包括用于发射具有第一峰值波长的光的发光器件。 波长转换层设置在由发光器件发射的光的路径中。 波长转换层吸收由发光器件发射的光并发射具有第二峰值波长的光。 波长转换层包括波长转换材料,透明材料和粘合材料的混合物,其中粘合材料不超过波长转换层的重量的15%。

    Phosphor in water glass for LEDS
    8.
    发明授权
    Phosphor in water glass for LEDS 有权
    LED水晶玻璃荧光粉

    公开(公告)号:US09379291B2

    公开(公告)日:2016-06-28

    申请号:US14362411

    申请日:2012-12-05

    Abstract: The invention provides a lighting unit comprising a light source and a light conversion layer, wherein the light source is configured to provide light source light and comprises a light emitting diode (LED), wherein the light conversion layer comprises an alkali silicate matrix containing a particulate luminescent material, and wherein the light conversion layer is configured to convert at least part of the light source light into luminescent material light.

    Abstract translation: 本发明提供了一种包括光源和光转换层的照明单元,其中所述光源被配置为提供光源光并且包括发光二极管(LED),其中所述光转换层包括含有颗粒的碱性硅酸盐基质 发光材料,并且其中所述光转换层被配置为将所述光源光的至少一部分转换成发光材料光。

    METHOD OF SEPARATING A WAFER OF SEMICONDUCTOR DEVICES
    10.
    发明申请
    METHOD OF SEPARATING A WAFER OF SEMICONDUCTOR DEVICES 有权
    分离半导体器件的方法

    公开(公告)号:US20150140711A1

    公开(公告)日:2015-05-21

    申请号:US14399323

    申请日:2013-05-08

    Abstract: A method according to embodiments of the invention includes providing a wafer comprising a semiconductor structure grown on a growth substrate. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. The wafer includes trenches defining individual semiconductor devices. The trenches extend through an entire thickness of the semiconductor structure to reveal the growth substrate. The method further includes forming a thick conductive layer on the semiconductor structure. The thick conductive layer is configured to support the semiconductor structure when the growth substrate is removed. The method further includes removing the growth substrate.

    Abstract translation: 根据本发明的实施例的方法包括提供包括在生长衬底上生长的半导体结构的晶片。 半导体结构包括设置在n型区域和p型区域之间的发光层。 晶片包括限定各个半导体器件的沟槽。 沟槽延伸穿过半导体结构的整个厚度以露出生长衬底。 该方法还包括在半导体结构上形成厚的导电层。 当导电层被去除时,厚的导电层构造成支撑半导体结构。 该方法还包括去除生长衬底。

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