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公开(公告)号：US10211187B2
公开(公告)日：2019-02-19
申请号：US15326484
申请日：2015-07-18
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Floris Maria Hermansz Crompvoets , Norbertus Antonius Maria Sweegers , Hugo Johan Cornelissen , Marc Andre de Samber
IPC: H01L25/075 , H01L33/46 , H01L33/50 , H01L33/60 , F21K9/90 , H01L33/58 , F21Y115/10
Abstract: A light source includes first and second semiconductor diode structures adapted to generate light, a light output section at least partially overlapping both of the first and the second semiconductor diode structures and being adapted to output light from the first and the second semiconductor diode structures, and a light reflecting structure at least partially enclosing side surfaces of the first and the second semiconductor diode structures and the light output section and being adapted to reflect light from the first and the second semiconductor diode structures towards the light output section. The area of the light output section is less than the combined area of the first and the second semiconductor diode structures.
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公开(公告)号：US20170207202A1
公开(公告)日：2017-07-20
申请号：US15326484
申请日：2015-07-18
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Floris Maria Hermansz Crompvoets , Norbertus Antonius Maria Sweegers , Hugo Johan Cornelissen , Marc Andre de Samber
IPC: H01L25/075 , F21K9/90 , H01L33/46 , H01L33/50 , H01L33/60
CPC classification number: H01L25/0753 , F21K9/90 , F21Y2115/10 , H01L33/46 , H01L33/504 , H01L33/58 , H01L33/60 , H01L2924/0002 , H01L2933/0025 , H01L2933/0058 , H01L2924/00
Abstract: Proposed is a light source comprising: first and second semiconductor diode structures adapted to generate light, the first and second semiconductor diode structures being laterally adjacent to each other; a light output section at least partially overlapping both of the first and second semiconductor diode structures and adapted to output light from the first and second semiconductor diode structures; and a light reflecting structure at least partially enclosing side surfaces of the first and second semiconductor diode structures and the light output section and adapted to reflect light from the semiconductor diode structures towards the light output section. The area of the light output section is less than the combined area of the first and second semiconductor diode structures.
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公开(公告)号：US11005017B2
公开(公告)日：2021-05-11
申请号：US15506663
申请日：2015-08-26
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Floris Maria Hermansz Crompvoets , Benno Spinger , Pascal Jean Henri Bloemen , Norbertus Antonius Maria Sweegers , Marc André De Samber
Abstract: There is proposed a light source comprising: a semiconductor diode structure adapted to generate light; and an optical enhancement section above the semiconductor diode structure and adapted to output light from the semiconductor diode structure. A partially-reflective layer covers at least a portion of the top of the optical enhancement section and is adapted to reflect a portion of the output light towards the optical enhancement section. The partially-reflective layer has a light transmittance characteristic that varies laterally.
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公开(公告)号：US09991238B2
公开(公告)日：2018-06-05
申请号：US15325693
申请日：2015-07-17
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Floris Maria Hermansz Crompvoets , Norbertus Antonius Maria Sweegers , Hugo Johan Cornelissen , Marc Andre de Samber
IPC: H01L31/00 , H01L25/075 , H01L33/60 , F21V8/00
CPC classification number: H01L25/0756 , F21Y2107/60 , G02B6/0006 , G02B6/0008 , G02B6/08 , H01L25/0753 , H01L33/60 , H01L2924/0002 , H01L2924/00
Abstract: Proposed is a light source comprising first and second LED light sources. Each of the first and second LED light sources have: a semiconductor diode structure adapted to generate light; and a light output section above the semiconductor diode structure adapted to output light from the semiconductor diode structure in a light output direction, the area of the light output section being less than the area of the semiconductor diode structure. The second LED light source is arranged above and at least partially overlapping the first LED light source with non-aligned light output sections with respect to the light output direction.
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公开(公告)号：US10164161B2
公开(公告)日：2018-12-25
申请号：US15520782
申请日：2015-10-20
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Norbertus Antonius Maria Sweegers , Floris Maria Hermansz Crompvoets , Marc Andre De Samber
Abstract: A light emitting arrangement is suggested for generating directional projections of light with sharply defined beam profile. Light from a top-emitting solid state light source (12), having reflective side-coating (34), is pre-collimated via a beam-shaping optic (16), before being propagated through a secondary collimating funnel (18), capturing any light rays with still too great an escape angle. Chip-scale package dimensions may be achieved through the use of a thin-film side-coating and undersized phosphor layers. Substrate level process flow further allows for parallel processing of a plurality of devices.
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Patent Agency Ranking
公开(公告)号：US10026884B2
公开(公告)日：2018-07-17
申请号：US15557087
申请日：2016-03-03
Applicant: KONINKLIJKE PHILIPS N.V.
IPC: H01L33/00 , H01L33/64 , H01L33/62 , H01L33/50 , F21V19/00 , H01L25/075 , F21K9/232 , F21Y115/10
Abstract: A light emitting device such as luminaire includes one or more light emitting device chips mounted on a board. The light emitting device chips have electrical contacts and are flip chip mounted to board with the electrical contacts connected to contact pads. Sidewall metallizations on the sidewalls of the light emitting device chips are connected by metal heat transfer elements to heat dissipation regions of board. The metal heat transfer elements may be of solder which may be deposited using equipment conventionally used for attaching surface mount devices.
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7.发明授权公开(公告)号：US09882091B2
公开(公告)日：2018-01-30
申请号：US15036879
申请日：2014-11-06
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Sander Petrus Martinus Noijen , Roy Antoin Bastiaan Engelen , Norbertus Antonius Maria Sweegers , Marc Andre de Samber
CPC classification number: H01L33/38 , H01L33/0095 , H01L33/382 , H01L33/387 , H01L2933/0016
Abstract: A solid state light emitting device includes a light emitting stack (20), a metallization (30), comprising a guard layer (36) of metal, and a dielectric layer (50) over the guard layer (36) of the metallization. During subsequent processing delamination and/or cracking may occur at the edges of the devices, sometimes referred to as die edge defects. To address these defects a plurality of stress-relief elements (62, 64) and/or anchor elements may be provided in an edge region of the metallization and/or dielectric layer for reducing delamination. The stress-relief elements (62, 64) are formed by regions of reduced thickness or increased thickness in the guard layer (36).
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公开(公告)号：US09698323B2
公开(公告)日：2017-07-04
申请号：US14917217
申请日：2014-08-28
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Stephen Andrew Stockman , Marc Andre de Samber , Oleg Borisovich Shchekin , Norbertus Antonius Maria Sweegers , Ashim Shatil Haque , Yourii Martynov
CPC classification number: H01L33/60 , H01L33/0075 , H01L33/0095 , H01L33/486 , H01L33/50 , H01L33/502 , H01L33/58 , H01L33/62 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058
Abstract: A hollow frame is configured to surround the periphery of a substantially self-supporting flip-chip light emitting device. The frame may be shaped to also contain a wavelength conversion element above the light emitting surface of the light emitting device. The lower surface of the light emitting device, which is exposed through the hollow frame, includes contact pads coupled to the light emitting element for surface mounting the light emitting module on a printed circuit board or other fixture. The flip-chip light emitting device may include a patterned sapphire substrate (PSS) upon which the light emitting element is grown, the patterned surface providing enhanced light extraction from the light emitting element, through the patterned sapphire substrate.
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公开(公告)号：US20160240755A1
公开(公告)日：2016-08-18
申请号：US14917217
申请日：2014-08-28
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Stephen Andrew Stockman , Marc Andre de Samber , Oleg Borisovich Shchekin , Norbertus Antonius Maria Sweegers , Ashim Shatil Haque , Yourii Martynov
CPC classification number: H01L33/60 , H01L33/0075 , H01L33/0095 , H01L33/486 , H01L33/50 , H01L33/502 , H01L33/58 , H01L33/62 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058
Abstract: A hollow frame is configured to surround the periphery of a substantially self-supporting flip-chip light emitting device. The frame may be shaped to also contain a wavelength conversion element above the light emitting surface of the light emitting device. The lower surface of the light emitting device, which is exposed through the hollow frame, includes contact pads coupled to the light emitting element for surface mounting the light emitting module on a printed circuit board or other fixture. The flip-chip light emitting device may include a patterned sapphire substrate (PSS) upon which the light emitting element is grown, the patterned surface providing enhanced light extraction from the light emitting element, through the patterned sapphire substrate.
Abstract translation: 中空框架构造成围绕基本上自支撑的倒装芯片发光器件的周边。 框架可以被成形为在发光器件的发光表面上方还包含波长转换元件。 通过中空框架露出的发光器件的下表面包括耦合到发光元件的接触焊盘，用于将发光模块表面安装在印刷电路板或其它固定装置上。 倒装芯片发光器件可以包括在其上生长发光元件的图案化蓝宝石衬底（PSS），图案化表面通过图案化蓝宝石衬底从发光元件提供增强的光提取。
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公开(公告)号：US20160240735A1
公开(公告)日：2016-08-18
申请号：US14783780
申请日：2014-03-31
Applicant: Koninklijke Philips N.V.
Inventor： Brendan Jude Moran , Marc Andre de Samber , Grigoriy Basin , Norbertus Antonius Maria Sweegers , Mark Melvin Butterworth , Kenneth Vampola , Clarisse Mazuir
IPC: H01L33/20 , H01L33/32 , H01L33/46 , H01L33/00 , H01L33/56 , H01L33/62 , H01L25/075 , H01L33/06 , H01L33/50
CPC classification number: H01L33/20 , H01L25/0753 , H01L33/007 , H01L33/0079 , H01L33/0095 , H01L33/06 , H01L33/32 , H01L33/44 , H01L33/46 , H01L33/465 , H01L33/502 , H01L33/56 , H01L33/62 , H01L2933/0025 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2933/0091
Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.
Abstract translation: 本发明的实施例包括包含夹在n型区域和p型区域之间的发光层的半导体结构。 生长衬底附着于半导体结构。 生长衬底具有至少一个成角度的侧壁。 反射层设置在成角度的侧壁上。 从半导体结构和生长衬底提取的大部分光通过生长衬底的第一表面提取。
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