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    IN-LINE WAFER EDGE INSPECTION, WAFER PRE-ALIGNMENT, AND WAFER CLEANING
    1.
    发明申请
    IN-LINE WAFER EDGE INSPECTION, WAFER PRE-ALIGNMENT, AND WAFER CLEANING 有权
    在线波形边缘检查，波形预排列和波形清洗

    公开(公告)号：US20150370175A1

    公开(公告)日：2015-12-24

    申请号：US14741866

    申请日：2015-06-17

    Applicant: KLA-Tencor Corporation

    Inventor： Lena Nicolaides ,  Ben-ming Benjamin Tsai ,  Prashant A. Aji ,  Michael Gasvoda ,  Stanley E. Stokowski ,  Guoheng Zhao ,  Youxian Wen ,  Mohan Mahadevan ,  Paul D. Horn ,  Wolfgang Vollrath ,  Isabella T. Lewis

    IPC: G03F7/20 ,  G01N21/95

    CPC classification number: G01N21/9503 ,  G01N2201/06113 ,  G03F7/7085 ,  H01L22/12

    Abstract: Disclosed are methods and apparatus for inspecting and processing semiconductor wafers. The system includes an edge detection system for receiving each wafer that is to undergo a photolithography process. The edge detection system comprises an illumination channel for directing one or more illumination beams towards a side, top, and bottom edge portion that are within a border region of the wafer. The edge detection system also includes a collection module for collecting and sensing output radiation that is scattered or reflected from the edge portion of the wafer and an analyzer module for locating defects in the edge portion and determining whether each wafer is within specification based on the sensed output radiation for such wafer. The photolithography system is configured for receiving from the edge detection system each wafer that has been found to be within specification. The edge detection system is coupled in-line with the photolithography system.

    Abstract translation: 公开了用于检查和处理半导体晶片的方法和装置。 该系统包括边缘检测系统，用于接收将进行光刻工艺的每个晶片。 边缘检测系统包括用于将一个或多个照明光束朝向位于晶片的边界区域内的侧面，顶部和底部边缘部分引导的照明通道。 边缘检测系统还包括用于收集和感测从晶片的边缘部分散射或反射的输出辐射的收集模块和用于定位边缘部分中的缺陷的分析器模块，并且基于所感测到的每个晶片是否在规格范围内 这种晶片的输出辐射。 光刻系统被配置为从边缘检测系统接收已发现在规格范围内的每个晶片。 边缘检测系统与光刻系统成对连接。

    APPARATUS AND METHODS FOR INSPECTING EXTREME ULTRA VIOLET RETICLES
    3.
    发明申请
    APPARATUS AND METHODS FOR INSPECTING EXTREME ULTRA VIOLET RETICLES 有权
    检测超极紫外线反应物的装置和方法

    公开(公告)号：US20150117754A1

    公开(公告)日：2015-04-30

    申请号：US14591181

    申请日：2015-01-07

    Applicant: KLA-Tencor Corporation

    Inventor： Mehran Nasser-Ghodsi ,  Stanley E. Stokowski ,  Mehdi Vaez-Iravani

    IPC: G06T7/00

    CPC classification number: G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148

    Abstract: Disclosed are methods and apparatus for inspecting an extreme ultraviolet (EUV) reticle is disclosed. An inspection tool for detecting electromagnetic waveforms is used to obtain a phase defect map for the EUV reticle before a pattern is formed on the EUV reticle, and the phase defect map identifies a position of each phase defect on the EUV reticle. After the pattern is formed on the EUV reticle, a charged particle tool is used to obtain an image of each reticle portion that is proximate to each position of each phase defect as identified in the phase defect map. The phase defect map and one or images of each reticle portion that is proximate to each position of each phase defect are displayed or stored so as to facilitate analysis of whether to repair or discard the EUV reticle.

    Abstract translation: 公开了用于检查极紫外（EUV）掩模版的方法和装置。 在EUV掩模版上形成图案之前，使用用于检测电磁波的检查工具来获得EUV掩模版的相位缺陷图，并且相位缺陷图识别EUV掩模版上每个相位缺陷的位置。 在EUV掩模版上形成图案之后，使用带电粒子工具来获得在相位缺陷图中所识别的每个相缺陷的每个位置附近的每个掩模版部分的图像。 显示或存储相位缺陷图以及接近每个相位缺陷的每个位置的每个标线片部分的一个或多个图像，以便于分析是否修复或丢弃EUV标线片。

    IMAGE ACQUISITION SYSTEM, IMAGE ACQUISITION METHOD, AND INSPECTION SYSTEM
    6.
    发明申请
    IMAGE ACQUISITION SYSTEM, IMAGE ACQUISITION METHOD, AND INSPECTION SYSTEM 有权
    图像采集系统，图像采集方法和检测系统

    公开(公告)号：US20160048969A1

    公开(公告)日：2016-02-18

    申请号：US14926984

    申请日：2015-10-29

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Guoheng ZHAO ,  Stanley E. Stokowski ,  Andrew HILL ,  Johan DE GREEVE ,  Maarten VAN DER BURGT ,  Karel VAN GILS

    IPC: G06T7/00 ,  H04N5/372

    CPC classification number: G06T7/586 ,  G01B11/0608 ,  G01B11/2513 ,  G01B11/2522 ,  G06T2207/10052 ,  G06T2207/20208 ,  H04N5/37206

    Abstract: The invention relates to an image acquisition system and an image acquisition method, as well as to an inspection system having at least one such image acquisition system. A projector projects a pattern on a surface of a sample, a camera records light intensity information from within at least two detection fields defined by the camera on the surface of the sample. A relative motion between the sample on the one hand and the camera and projector on the other hand is generated. From the acquired at least one image a height profile of the surface of the sample may be inferred. The pattern may comprise a number of sub-patterns related to each other by a phase shift. Alternatively, the pattern may be a fringe pattern.

    Abstract translation: 本发明涉及一种图像获取系统和图像获取方法，以及具有至少一个这样的图像采集系统的检查系统。 投影仪在样品的表面上投影图案，照相机记录来自样品表面上由照相机限定的至少两个检测区域内的光强度信息。 另一方面，生成样品与相机和投影仪之间的相对运动。 从所获取的至少一个图像可以推断出样品表面的高度分布。 该图案可以包括通过相移彼此相关的多个子图案。 或者，图案可以是条纹图案。

    Apparatus and methods for inspecting extreme ultra violet reticles
    7.
    发明授权
    Apparatus and methods for inspecting extreme ultra violet reticles 有权
    用于检查极端紫外线掩模版的装置和方法

    公开(公告)号：US08953869B2

    公开(公告)日：2015-02-10

    申请号：US13905448

    申请日：2013-05-30

    Applicant: KLA-Tencor Corporation

    Inventor： Mehran Nasser-Ghodsi ,  Stanley E. Stokowski ,  Mehdi Vaez-Iravani

    IPC: G06K9/00 ,  G06T7/00

    CPC classification number: G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148

    Abstract: Disclosed are methods and apparatus for inspecting an extreme ultraviolet (EUV) reticle is disclosed. An optical inspection tool is used to obtain a phase defect map for the EUV reticle before a pattern is formed on the EUV reticle, and the phase defect map identifies a position of each phase defect on the EUV reticle. After the pattern is formed on the EUV reticle, a charged particle tool is used to obtain an image of each reticle portion that is proximate to each position of each phase defect as identified in the phase defect map. The phase defect map and one or images of each reticle portion that is proximate to each position of each phase defect are displayed or stored so as to facilitate analysis of whether to repair or discard the EUV reticle.

    Abstract translation: 公开了用于检查极紫外（EUV）掩模版的方法和装置。 在EUV掩模版上形成图案之前，使用光学检查工具获得EUV掩模版的相位缺陷图，并且相位缺陷图识别EUV掩模版上每个相位缺陷的位置。 在EUV掩模版上形成图案之后，使用带电粒子工具来获得在相位缺陷图中所识别的每个相缺陷的每个位置附近的每个掩模版部分的图像。 显示或存储相位缺陷图以及接近每个相位缺陷的每个位置的每个标线片部分的一个或多个图像，以便于分析是否修复或丢弃EUV掩模版。

    Apparatus and methods for inspecting extreme ultra violet reticles
    8.
    发明授权
    Apparatus and methods for inspecting extreme ultra violet reticles 有权

    公开(公告)号：US09679372B2

    公开(公告)日：2017-06-13

    申请号：US14591181

    申请日：2015-01-07

    Applicant: KLA-Tencor Corporation

    Inventor： Mehran Nasser-Ghodsi ,  Stanley E. Stokowski ,  Mehdi Vaez-Iravani

    IPC: G06K9/00 ,  G06T7/00

    CPC classification number: G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148

    Abstract: Disclosed are methods and apparatus for inspecting an extreme ultraviolet (EUV) reticle is disclosed. An inspection tool for detecting electromagnetic waveforms is used to obtain a phase defect map for the EUV reticle before a pattern is formed on the EUV reticle, and the phase defect map identifies a position of each phase defect on the EUV reticle. After the pattern is formed on the EUV reticle, a charged particle tool is used to obtain an image of each reticle portion that is proximate to each position of each phase defect as identified in the phase defect map. The phase defect map and one or images of each reticle portion that is proximate to each position of each phase defect are displayed or stored so as to facilitate analysis of whether to repair or discard the EUV reticle.

    APPARATUS AND METHODS FOR INSPECTING EXTREME ULTRA VIOLET RETICLES
    10.
    发明申请
    APPARATUS AND METHODS FOR INSPECTING EXTREME ULTRA VIOLET RETICLES 有权
    检测超极紫外线反应物的装置和方法

    公开(公告)号：US20130336574A1

    公开(公告)日：2013-12-19

    申请号：US13905448

    申请日：2013-05-30

    Applicant: KLA-Tencor Corporation

    Inventor： Mehran Nasser-Ghodsi ,  Stanley E. Stokowski ,  Mehdi Vaez-Iravani

    IPC: G06T7/00

    CPC classification number: G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148

    Abstract: Disclosed are methods and apparatus for inspecting an extreme ultraviolet (EUV) reticle is disclosed. An optical inspection tool is used to obtain a phase defect map for the EUV reticle before a pattern is formed on the EUV reticle, and the phase defect map identifies a position of each phase defect on the EUV reticle. After the pattern is formed on the EUV reticle, a charged particle tool is used to obtain an image of each reticle portion that is proximate to each position of each phase defect as identified in the phase defect map. The phase defect map and one or images of each reticle portion that is proximate to each position of each phase defect are displayed or stored so as to facilitate analysis of whether to repair or discard the EUV reticle.

    Abstract translation: 公开了用于检查极紫外（EUV）掩模版的方法和装置。 在EUV掩模版上形成图案之前，使用光学检查工具获得EUV掩模版的相位缺陷图，并且相位缺陷图识别EUV掩模版上每个相位缺陷的位置。 在EUV掩模版上形成图案之后，使用带电粒子工具来获得在相位缺陷图中所识别的每个相缺陷的每个位置附近的每个掩模版部分的图像。 显示或存储相位缺陷图以及接近每个相位缺陷的每个位置的每个标线片部分的一个或多个图像，以便于分析是否修复或丢弃EUV掩模版。

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