Abstract:
An apparatus for focusing light in a semi-conductor inspection system, including: a first mirror arranged to reflect extreme ultra-violet (EUV) generated by a plasma source; and a second mirror arranged to focus the EUV light, reflected from the first mirror, onto a first intermediate focus plane. A homogenizing tunnel, including: a first aperture having a first shape and a first size and arranged to receive extreme ultra-violet (EUV) light; a second aperture having a second shape and a second size; and a passageway connecting the first and second apertures and arranged to homogenize the EUV light received by the first aperture. The first shape is different from the second shape or the first size is different from the second size.
Abstract:
Methods and systems for performing single wavelength ellipsometry (SWE) measurements with reduced measurement spot size are presented herein. In one aspect, a pupil stop is located at or near a pupil plane in the collection optical path to reduce sensitivity to target edge diffraction effects. In another aspect, a field stop is located at or near an image plane conjugate to the wafer plane in the collection optical path to reduce sensitivity to undesired optical-structural interactions. In another aspect, a linear polarizer acting on the input beam of the SWE system includes a thin, nanoparticle based polarizer element. The nanoparticle based polarizer element improves illumination beam quality and reduces astigmatism on the wafer plane. The pupil and field stops filter out unwanted light rays before reaching the detector. As a result, measurement spot size is reduced and tool-to-tool matching performance for small measurement targets is greatly enhanced.
Abstract:
An apparatus for inspecting a photomask, comprising an illumination source for generating a light which illuminates a target substrate, objective optics for receiving and projecting the light which is reflected from the target substrate, the objective optics includes a first mirror arranged to receive and reflect the light which is reflected from the target substrate, a second mirror which is arranged to receive and reflect the light which is reflected by the first mirror, a third mirror which is arranged to receive and reflect the light which is reflected by the second mirror, and a segmented mirror which is arranged to receive and reflect the light which is reflected by the third mirror. The segmented mirror includes at least two mirror segments. The apparatus further includes at least one sensor for detecting the light which is projected by the objective optics.
Abstract:
An apparatus for inspecting a photomask, comprising an illumination source for generating a light which illuminates a target substrate, objective optics for receiving and projecting the light which is reflected from the target substrate, the objective optics includes a first mirror arranged to receive and reflect the light which is reflected from the target substrate, a second mirror which is arranged to receive and reflect the light which is reflected by the first mirror, a third mirror which is arranged to receive and reflect the light which is reflected by the second mirror, and a segmented mirror which is arranged to receive and reflect the light which is reflected by the third mirror. The segmented mirror includes at least two mirror segments. The apparatus further includes at least one sensor for detecting the light which is projected by the objective optics.
Abstract:
An apparatus for focusing light in a semi-conductor inspection system, including: a first mirror arranged to reflect extreme ultra-violet (EUV) generated by a plasma source; and a second mirror arranged to focus the EUV light, reflected from the first mirror, onto a first intermediate focus plane. A homogenizing tunnel, including: a first aperture having a first shape and a first size and arranged to receive extreme ultra-violet (EUV) light; a second aperture having a second shape and a second size; and a passageway connecting the first and second apertures and arranged to homogenize the EUV light received by the first aperture. The first shape is different from the second shape or the first size is different from the second size.