公开(公告)号：US11119417B2

公开(公告)日：2021-09-14

申请号：US16491963

申请日：2019-08-05

Applicant: KLA-TENCOR CORPORATION

Inventor： Amnon Manassen ,  Yuri Paskover ,  Eran Amit

IPC: G01B11/02 ,  G03F7/20 ,  G01B9/02 ,  G01B11/27

Abstract: Scatterometry overlay (SCOL) measurement methods, systems and targets are provided to enable efficient SCOL metrology with in-die targets. Methods comprise generating a signal matrix by: illuminating a SCOL target at multiple values of at least one illumination parameter, and at multiple spot locations on the target, wherein the illumination is at a NA (numerical aperture) >⅓ yielding a spot diameter

公开(公告)号：US10527951B2

公开(公告)日：2020-01-07

申请号：US15057723

申请日：2016-03-01

Applicant: KLA-TENCOR CORPORATION

Inventor： Raviv Yohanan ,  Eran Amit ,  Mark Ghinovker ,  Tal Itzkovich ,  Nuriel Amir

IPC: G03F7/20

Abstract: Imaging metrology targets and methods are provided, which combine one-dimensional (1D) elements designed to provide 1D imaging metrology signals along at least two measurement directions and two-dimensional (2D) elements designed to provide at least one 2D imaging metrology overlay signal. The target area of the 1D elements may enclose the 2D elements or the target areas of the 1D and 2D elements may be partially or fully congruent. The compound targets are small, possibly multilayered, and may be designed to be process compatible (e.g., by segmentation of the elements, interspaces between elements and element backgrounds) and possibly be produced in die. Two dimensional elements may be designed to be periodic to provide additional one dimensional metrology signals.

公开(公告)号：US10415963B2

公开(公告)日：2019-09-17

申请号：US14727038

申请日：2015-06-01

Applicant: KLA-Tencor Corporation

Inventor： Tal Marciano ,  Eran Amit ,  Barak Bringoltz ,  Nuriel Amir ,  Amit Shaked

IPC: G06F17/50 ,  G01B11/27

Abstract: Metrology methods and targets are provided, for estimating inter-cell process variation by deriving, from overlay measurements of at least three target cells having different designed misalignments, a dependency of a measured inaccuracy on the designed misalignments (each designed misalignment is between at least two overlapping periodic structures in the respective target cell). Inaccuracies which are related to the designed misalignments are reduced, process variation sources are detected and targets and measurement algorithms are optimized according to the derived dependency.

公开(公告)号：US20190178630A1

公开(公告)日：2019-06-13

申请号：US16132157

申请日：2018-09-14

Applicant: KLA-Tencor Corporation

Inventor： Eran Amit ,  Amnon Manassen ,  Nadav Gutman

IPC: G01B11/06 ,  G06N99/00

Abstract: Metrology targets designs, design methods and measurement methods are provided, which reduce noise and enhance measurement accuracy. Disclosed targets comprise an additional periodic structure which is orthogonal to the measurement direction along which given target structures are periodic. For example, in addition to two or more periodic structures along each measurement direction in imaging or scatterometry targets, a third, orthogonal periodic structure may be introduced, which provides additional information in the orthogonal direction, can be used to reduce noise, enhances accuracy and enables the application of machine learning algorithms to further enhance accuracy. Signals may be analyzed slice-wise with respect to the orthogonal periodic structure, which can be integrated in a process compatible manner in both imaging and scatterometry targets.

公开(公告)号：US10025285B2

公开(公告)日：2018-07-17

申请号：US14755758

申请日：2015-06-30

Applicant: KLA-TENCOR CORPORATION

Inventor： Roie Volkovich ,  Eran Amit ,  Nuriel Amir ,  Michael E. Adel

IPC: G06F17/50 ,  G05B19/048 ,  G03F7/00 ,  H01L21/66 ,  G03F7/20

Abstract: Methods and metrology tool modules embodying the methods are provided. Methods comprise measuring characteristics of intermediate features such as guiding lines in a directed self-assembly (DSA) process, deriving exposure parameters from the measured characteristics; and adjusting production parameters for producing consecutive target features according to the derived exposure parameters. The methods and modules enhance the accuracy of the DSA-produced structures and related measurements.

公开(公告)号：US20160253450A1

公开(公告)日：2016-09-01

申请号：US15082152

申请日：2016-03-28

Applicant: KLA-Tencor Corporation

Inventor： Daniel Kandel ,  Mark D. Smith ,  Mark Wagner ,  Eran Amit ,  Myungjun Lee

IPC: G06F17/50 ,  G01N21/93 ,  G01N21/956

Abstract: Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods comprise identifying yield critical patterns according to a corresponding process window narrowing due to specified process variation, wherein the narrowing is defined by a dependency of edge placement errors (EPEs) of the patterns on process parameters. Corresponding targets and measurements are provided.

Abstract translation: 提供了测量方法，其包括在设备设计中识别重叠关键模式，所述重叠关键模式对于取决于设计规范的指定阈值以上的过程变化具有重叠灵敏度; 并使用与所识别的重叠关键模式相对应的度量目标。 替代地或补充地，计量方法包括根据由于指定的过程变化而变窄的对应过程窗口来识别产出关键模式，其中缩小由模式的边缘放置误差（EPE）对过程参数的依赖性来定义。 提供相应的目标和测量。

公开(公告)号：US09329033B2

公开(公告)日：2016-05-03

申请号：US13834915

申请日：2013-03-15

Applicant: KLA-TENCOR CORPORATION

Inventor： Eran Amit ,  Dana Klein ,  Guy Cohen ,  Amir Widmann ,  Nimrod Shuall ,  Amnon Manassen ,  Nuriel Amir

IPC: G01N37/00 ,  G01B21/04 ,  G03F7/20 ,  G06F11/30

CPC classification number: G01B21/042 ,  G03F7/70625 ,  G03F7/70633

Abstract: Aspects of the present disclosure describe systems and methods for calibrating a metrology tool by using proportionality factors. The proportionality factors may be obtained by measuring a substrate under different measurement conditions. Then calculating the measured metrology value and one or more quality merits. From this information, proportionality factors may be determined. Thereafter the proportionality factors may be used to quantify the inaccuracy in a metrology measurement. The proportionality factors may also be used to determine an optimize measurement recipe. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract translation: 本公开的方面描述了通过使用比例因子来校准度量工具的系统和方法。 可以通过在不同测量条件下测量衬底来获得比例因子。 然后计算测量的度量值和一个或多个质量优点。 根据该信息，可以确定比例因子。 此后，可以使用比例因子来量化度量测量中的不精确度。 比例因子也可用于确定优化测量配方。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

公开(公告)号：US08913237B2

公开(公告)日：2014-12-16

申请号：US13904318

申请日：2013-05-29

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Levinski ,  Daniel Kandel ,  Eran Amit

IPC: G01B11/27 ,  H01L23/544 ,  G01N21/47 ,  G03F7/20 ,  G01N21/956

CPC classification number: G01B11/272 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70633 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a semiconductor target for detecting overlay error between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The target comprises at least a plurality of a plurality of first grating structures having a course pitch that is resolvable by an inspection tool and a plurality of second grating structures positioned relative to the first grating structures. The second grating structures have a fine pitch that is smaller than the course pitch, and the first and second grating structures are both formed in two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate. The first and second gratings have feature dimensions that all comply with a predefined design rules specification.

Abstract translation: 在一个实施例中，公开了一种半导体靶，用于检测衬底的两个或更多个连续层之间或在衬底的单层上的两个或更多个分开产生的图案之间的重叠误差。 目标包括至少多个多个第一光栅结构，其具有通过检查工具可分辨的光程间距和相对于第一光栅结构定位的多个第二光栅结构。 第二光栅结构具有小于光栅间距的细间距，并且第一和第二光栅结构均形成在衬底的两个或更多个连续层中，或者在衬底的单个层上的两个或更多个分开产生的图案之间 。 第一和第二光栅具有全部符合预定义的设计规则规范的特征尺寸。

公开(公告)号：US11709433B2

公开(公告)日：2023-07-25

申请号：US17689934

申请日：2022-03-08

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Levinski ,  Amnon Manassen ,  Eran Amit ,  Nuriel Amir ,  Liran Yerushalmi ,  Amit Shaked

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

公开(公告)号：US11158548B2

公开(公告)日：2021-10-26

申请号：US16092559

申请日：2018-09-03

Applicant: KLA-TENCOR CORPORATION

Inventor： Yuval Lamhot ,  Eran Amit ,  Einat Peled ,  Noga Sella ,  Wei-Te Cheng ,  Ido Adam

IPC: H01L21/00 ,  H01L21/66 ,  G01N21/31 ,  H01L21/67

Abstract: A method of determining overlay (“OVL”) in a pattern in a semiconductor wafer manufacturing process comprises capturing images from a cell in a metrology target formed in at least two different layers in the wafer with parts of the target offset in opposing directions with respect to corresponding parts in a different layer. The images may be captured using radiation of multiple different wavelengths, each image including +1 and −1 diffraction patterns. A first and second differential signal may be determined for respective pixels in each image by subtracting opposing pixels from the +1 and −1 diffraction orders for each of the multiple wavelengths. An OVL for the respective pixels may be determined based on analyzing the differential signals from multiple wavelengths simultaneously. Then an OVL for the pattern may be determined as a weighted average of the OVL of the respective pixels.