公开(公告)号：US09007585B2

公开(公告)日：2015-04-14

申请号：US13783903

申请日：2013-03-04

Applicant: KLA-Tencor Corporation

Inventor： Guy Cohen

IPC: G01B11/00 ,  G03F7/20 ,  H01L23/544

CPC classification number: G03F7/70633 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An exclusion region of interest imaging overlay target includes a self-symmetric target structure including two or more pattern elements, and an additional target structure including two or more pattern elements, wherein each of pattern elements of the additional target structure is contained within a boundary defined by one of the pattern elements of the self-symmetric target structure, wherein the self-symmetric target structure is characterized by a composite exterior region of interest, wherein the composite exterior region of interest is formed by removing two or more exclusion zones corresponding with the pattern elements of the additional target structure from an exterior region of interest encompassing the self-symmetric target structure, wherein each of the pattern elements of the additional target structure is characterized by an interior region of interest, wherein the self-symmetric target structure and the additional target structure are configured to have a common center of symmetry upon alignment.

Abstract translation: 感兴趣的排除区域成像覆盖目标包括包括两个或多个图案元素的自对称目标结构和包括两个或更多个图案元素的附加目标结构，其中附加目标结构的每个图案元素被包含在限定的边界内 通过所述自对称目标结构的图案元素中的一个，其中所述自对称目标结构的特征在于感兴趣的复合外部区域，其中所述复合外部区域通过去除与所述自对称目标结构对应的两个或更多个排除区域而形成 来自包含自对称目标结构的感兴趣的外部区域的附加目标结构的图案元素，其中附加目标结构的每个图案元素的特征在于感兴趣的内部区域，其中自对称目标结构和 附加目标结构被配置为具有公共中心 对准时的对称性。

公开(公告)号：US20130242305A1

公开(公告)日：2013-09-19

申请号：US13783903

申请日：2013-03-04

Applicant: KLA-TENCOR CORPORATION

Inventor： Guy Cohen

IPC: G03F7/20 ,  H01L23/544

CPC classification number: G03F7/70633 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An exclusion region of interest imaging overlay target includes a self-symmetric target structure including two or more pattern elements, and an additional target structure including two or more pattern elements, wherein each of pattern elements of the additional target structure is contained within a boundary defined by one of the pattern elements of the self-symmetric target structure, wherein the self-symmetric target structure is characterized by a composite exterior region of interest, wherein the composite exterior region of interest is formed by removing two or more exclusion zones corresponding with the pattern elements of the additional target structure from an exterior region of interest encompassing the self-symmetric target structure, wherein each of the pattern elements of the additional target structure is characterized by an interior region of interest, wherein the self-symmetric target structure and the additional target structure are configured to have a common center of symmetry upon alignment.

Abstract translation: 感兴趣的排除区域成像覆盖目标包括包括两个或多个图案元素的自对称目标结构和包括两个或更多个图案元素的附加目标结构，其中附加目标结构的每个图案元素被包含在限定的边界内 通过所述自对称目标结构的图案元素中的一个，其中所述自对称目标结构的特征在于感兴趣的复合外部区域，其中所述复合外部区域通过去除与所述自对称目标结构对应的两个或更多个排除区域而形成 来自包含自对称目标结构的感兴趣的外部区域的附加目标结构的图案元素，其中附加目标结构的每个图案元素的特征在于感兴趣的内部区域，其中自对称目标结构和 附加目标结构被配置为具有公共中心 对准时的对称性。

公开(公告)号：US20180275530A1

公开(公告)日：2018-09-27

申请号：US15925325

申请日：2018-03-19

Applicant: KLA-Tencor Corporation

Inventor： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

IPC: G03F7/20

Abstract: A system for measuring overlay from a multi-layer overlay target for use in imaging based metrology is disclosed. The system is configured for measuring overlay from a multi-layer overly target that includes three or more target structures, wherein a first target structure is disposed in a first process layer, a second target structure is disposed in a second process layer, and at least a third target structure is disposed in at least a third process layer. The system includes an illumination source configured to illuminate the target structures of the multi-layer overlay target, a detector configured to collect light reflected from the target structures, and one or more processors configured to execute a set of program instructions to determine overlay error between two or more structures based on the collected light from the plurality of targets.

公开(公告)号：US09329033B2

公开(公告)日：2016-05-03

申请号：US13834915

申请日：2013-03-15

Applicant: KLA-TENCOR CORPORATION

Inventor： Eran Amit ,  Dana Klein ,  Guy Cohen ,  Amir Widmann ,  Nimrod Shuall ,  Amnon Manassen ,  Nuriel Amir

IPC: G01N37/00 ,  G01B21/04 ,  G03F7/20 ,  G06F11/30

CPC classification number: G01B21/042 ,  G03F7/70625 ,  G03F7/70633

Abstract: Aspects of the present disclosure describe systems and methods for calibrating a metrology tool by using proportionality factors. The proportionality factors may be obtained by measuring a substrate under different measurement conditions. Then calculating the measured metrology value and one or more quality merits. From this information, proportionality factors may be determined. Thereafter the proportionality factors may be used to quantify the inaccuracy in a metrology measurement. The proportionality factors may also be used to determine an optimize measurement recipe. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract translation: 本公开的方面描述了通过使用比例因子来校准度量工具的系统和方法。 可以通过在不同测量条件下测量衬底来获得比例因子。 然后计算测量的度量值和一个或多个质量优点。 根据该信息，可以确定比例因子。 此后，可以使用比例因子来量化度量测量中的不精确度。 比例因子也可用于确定优化测量配方。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

公开(公告)号：US10527954B2

公开(公告)日：2020-01-07

申请号：US15925325

申请日：2018-03-19

Applicant: KLA-Tencor Corporation

Inventor： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

IPC: G03F7/20

Abstract: A system for measuring overlay from a multi-layer overlay target for use in imaging based metrology is disclosed. The system is configured for measuring overlay from a multi-layer overly target that includes three or more target structures, wherein a first target structure is disposed in a first process layer, a second target structure is disposed in a second process layer, and at least a third target structure is disposed in at least a third process layer. The system includes an illumination source configured to illuminate the target structures of the multi-layer overlay target, a detector configured to collect light reflected from the target structures, and one or more processors configured to execute a set of program instructions to determine overlay error between two or more structures based on the collected light from the plurality of targets.

公开(公告)号：US20130293890A1

公开(公告)日：2013-11-07

申请号：US13898828

申请日：2013-05-21

Applicant: KLA-Tencor Corporation

Inventor： Nuriel Amir ,  Guy Cohen ,  Vladimir Levinski ,  Michael Adel

IPC: G01B11/14

CPC classification number: G01B11/14 ,  G03F7/70633 ,  G03F7/70683

Abstract: The disclosure is directed to designing and using an overlay target with orthogonal underlayer dummyfill. According to various embodiments, an overlay target may include one or more segmented overlay pattern elements forming at least one overlay target structure. The overlay target may further include one or more inactive pattern elements forming at least one dummyfill target structure. Each of the one or more inactive pattern elements may include dummyfill segmented along an axis orthogonal to a segmentation axis of at least one proximately disposed overlay pattern element. In some embodiments, each of the target structures or layers may be formed from a separate process layer successively disposed upon a substrate, such as a silicon wafer. In some embodiments, the overlay and dummyfill target structures may be twofold or fourfold rotationally symmetric to allow for certain manufacturing or metrology advantages.

Abstract translation: 本公开旨在设计和使用具有正交底层虚拟填充物的覆盖目标。 根据各种实施例，覆盖目标可以包括形成至少一个覆盖目标结构的一个或多个分段覆盖图案元素。 覆盖目标还可以包括形成至少一个虚拟填充目标结构的一个或多个无效模式元素。 一个或多个非活动图案元素中的每一个可以包括沿着与至少一个近似布置的覆盖图案元素的分割轴正交的轴分割的伪填充。 在一些实施例中，目标结构或层中的每一个可以由连续设置在诸如硅晶片的基底上的单独的处理层形成。 在一些实施例中，覆盖层和虚拟填充目标结构可以是双重的或四倍的旋转对称以允许某些制造或度量的优点。

公开(公告)号：US10890436B2

公开(公告)日：2021-01-12

申请号：US13898828

申请日：2013-05-21

Applicant: KLA-Tencor Corporation

Inventor： Nuriel Amir ,  Guy Cohen ,  Vladimir Levinski ,  Michael Adel

IPC: G01B11/14 ,  G03F7/20

Abstract: The disclosure is directed to designing and using an overlay target with orthogonal underlayer dummyfill. According to various embodiments, an overlay target may include one or more segmented overlay pattern elements forming at least one overlay target structure. The overlay target may further include one or more inactive pattern elements forming at least one dummyfill target structure. Each of the one or more inactive pattern elements may include dummyfill segmented along an axis orthogonal to a segmentation axis of at least one proximately disposed overlay pattern element. In some embodiments, each of the target structures or layers may be formed from a separate process layer successively disposed upon a substrate, such as a silicon wafer. In some embodiments, the overlay and dummyfill target structures may be twofold or fourfold rotationally symmetric to allow for certain manufacturing or metrology advantages.

公开(公告)号：US20140060148A1

公开(公告)日：2014-03-06

申请号：US13834915

申请日：2013-03-15

Applicant: KLA-TENCOR CORPORATION

Inventor： Eran Amit ,  Dana Klein ,  Guy Cohen ,  Amir Widmann ,  Nimrod Shuall ,  Amnon Manassen ,  Nuriel Amir

IPC: G01B21/04

CPC classification number: G01B21/042 ,  G03F7/70625 ,  G03F7/70633

Abstract: Aspects of the present disclosure describe systems and methods for calibrating a metrology tool by using proportionality factors. The proportionality factors may be obtained by measuring a substrate under different measurement conditions. Then calculating the measured metrology value and one or more quality merits. From this information, proportionality factors may be determined. Thereafter the proportionality factors may be used to quantify the inaccuracy in a metrology measurement. The proportionality factors may also be used to determine an optimize measurement recipe. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract translation: 本公开的方面描述了通过使用比例因子来校准度量工具的系统和方法。 可以通过在不同测量条件下测量衬底来获得比例因子。 然后计算测量的度量值和一个或多个质量优点。 根据该信息，可以确定比例因子。 此后，可以使用比例因子来量化度量测量中的不精确度。 比例因子也可用于确定优化测量配方。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。