公开(公告)号：US20250021019A1

公开(公告)日：2025-01-16

申请号：US18902197

申请日：2024-09-30

Applicant: KLA Corporation

Inventor： Yoel Feler ,  Mark Ghinovker ,  Diana Shaphirov ,  Evgeni Gurevich ,  Vladimir Levinski

IPC: G03F7/00 ,  G03F9/00 ,  G06T7/33

Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.

公开(公告)号：US11164307B1

公开(公告)日：2021-11-02

申请号：US16935117

申请日：2020-07-21

Applicant: KLA Corporation

Inventor： Yoel Feler ,  Mark Ghinovker ,  Evgeni Gurevich ,  Vladimir Levinski ,  Alexander Svizher

IPC: G06T7/00 ,  G02B27/60 ,  H04N5/225

Abstract: A metrology system and metrology methods are disclosed. The metrology system includes an illumination sub-system, a collection sub-system, a detector, and a controller. The controller is configured to receive an image of an overlay target on a sample, determine an apparent overlay between two working zones along a measurement direction based on the image, and calculate an overlay between the two sample layers by dividing the apparent overlay by a Moiré gain to compensate for Moiré interference.

公开(公告)号：US20210072650A1

公开(公告)日：2021-03-11

申请号：US16743124

申请日：2020-01-15

Applicant: KLA Corporation

Inventor： Yoel Feler ,  Mark Ghinovker ,  Diana Shaphirov ,  Evgeni Gurevich ,  Vladimir Levinski

IPC: G03F7/20 ,  G03F9/00 ,  G06T7/33

Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.

公开(公告)号：US20240210841A9

公开(公告)日：2024-06-27

申请号：US17675912

申请日：2022-02-18

Applicant: KLA Corporation

Inventor： Yoel Feler ,  Mark Ghinovker ,  Diana Shaphirov ,  Evgeni Gurevich ,  Vladimir Levinski

IPC: G03F7/20 ,  G03F9/00 ,  G06T7/33

CPC classification number: G03F7/70633 ,  G03F9/7076 ,  G06T7/33 ,  G06T2207/30148

Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.

公开(公告)号：US20220171297A1

公开(公告)日：2022-06-02

申请号：US17675912

申请日：2022-02-18

Applicant: KLA Corporation

Inventor： Yoel Feler ,  Mark Ghinovker ,  Diana Shaphirov ,  Evgeni Gurevich ,  Vladimir Levinski

IPC: G03F7/20 ,  G06T7/33 ,  G03F9/00

Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.

公开(公告)号：US11256177B2

公开(公告)日：2022-02-22

申请号：US16743124

申请日：2020-01-15

Applicant: KLA Corporation

Inventor： Yoel Feler ,  Mark Ghinovker ,  Diana Shaphirov ,  Evgeni Gurevich ,  Vladimir Levinski

IPC: G03F7/20 ,  G06T7/33 ,  G03F9/00

Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.

公开(公告)号：US12105433B2

公开(公告)日：2024-10-01

申请号：US17675912

申请日：2022-02-18

Applicant: KLA Corporation

Inventor： Yoel Feler ,  Mark Ghinovker ,  Diana Shaphirov ,  Evgeni Gurevich ,  Vladimir Levinski

IPC: G03F7/00

CPC classification number: G03F7/70633

Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.

公开(公告)号：US10831108B2

公开(公告)日：2020-11-10

申请号：US15198902

申请日：2016-06-30

Applicant: KLA CORPORATION

Inventor： Tal Marciano ,  Barak Bringoltz ,  Evgeni Gurevich ,  Ido Adam ,  Ze'ev Lindenfeld ,  Zeng Zhao ,  Yoel Feler ,  Daniel Kandel ,  Nadav Carmel ,  Amnon Manassen ,  Nuriel Amir ,  Oded Kaminsky ,  Tal Yaziv ,  Ofer Zaharan ,  Moshe Cooper ,  Roee Sulimarski ,  Tom Leviant ,  Noga Sella ,  Boris Efraty ,  Lilach Saltoun ,  Amir Handelman ,  Eltsafon Ashwal ,  Ohad Bachar

IPC: G03F7/20 ,  H01L21/66 ,  G03F9/00

Abstract: Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.