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公开(公告)号：US11725934B2
公开(公告)日：2023-08-15
申请号：US16964748
申请日：2020-06-25
Applicant: KLA Corporation
Inventor： Dana Klein , Tal Marciano , Noa Armon
CPC classification number: G01B11/27 , H01L21/67288 , H01L22/12
Abstract: A method for quantifying sensitivity of metrology to process variation including performing metrology, by a metrology tool, on at least one metrology target located at at least one site on a semiconductor wafer, thereby generating a metrology landscape, and calculating a sensitivity metric directly based on the metrology landscape, the sensitivity metric quantifying a sensitivity of the metrology landscape to process variation involved in manufacture of the semiconductor wafer.
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公开(公告)号：US11249400B2
公开(公告)日：2022-02-15
申请号：US16609736
申请日：2019-09-30
Applicant: KLA CORPORATION
Inventor： Lilach Saltoun , Tal Marciano , Dana Klein
Abstract: Systems, metrology modules and methods are provided, which identify, per wafer site, components of residuals from measurement of metrology metric(s), and optimize measurement parameters for each site, according to the identified residuals' components. Certain embodiments utilize metric landscapes to identify sensitive sites and/or to identify sites exhibiting highest accuracy, and corresponding metrics may be combined over the wafer to further enhance the metrology performance. Zonal analysis may be used to reduce the systematic errors, and disclosed per-site analysis may be used to further reduce the non-systematic error components, and relate the remaining residuals components to process variation over the wafer.
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Patent Agency Ranking
公开(公告)号：US20200371445A1
公开(公告)日：2020-11-26
申请号：US16609736
申请日：2019-09-30
Applicant: KLA CORPORATION
Inventor： Lilach Saltoun , Tal Marciano , Dana Klein
Abstract: Systems, metrology modules and methods are provided, which identify, per wafer site, components of residuals from measurement of metrology metric(s), and optimize measurement parameters for each site, according to the identified residuals' components. Certain embodiments utilize metric landscapes to identify sensitive sites and/or to identify sites exhibiting highest accuracy, and corresponding metrics may be combined over the wafer to further enhance the metrology performance. Zonal analysis may be used to reduce the systematic errors, and disclosed per-site analysis may be used to further reduce the non-systematic error components, and relate the remaining residuals components to process variation over the wafer.
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公开(公告)号：US20200241428A1
公开(公告)日：2020-07-30
申请号：US16741574
申请日：2020-01-13
Applicant: KLA Corporation
Inventor： Tal Marciano , Noa Armon , Dana Klein
Abstract: An overlay metrology system includes a controller to receive, from an overlay metrology tool, overlay measurements on multiple sets of overlay targets on a sample with a range of values of a measurement parameter, where a particular set of overlay targets includes overlay targets having one of two or more overlay target designs. The controller may further determine scaling metric values for at least some of the overlay targets, where the scaling metric for a particular overlay target is based on a standard deviation of the overlay measurements of the corresponding set of overlay targets. The controller may further determine a variability of the scaling metric values for each of the two or more sets of overlay targets. The controller may further select, as an output overlay target design, one of the two or more overlay target designs having a smallest scaling metric variability.
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公开(公告)号：US11333982B2
公开(公告)日：2022-05-17
申请号：US16741574
申请日：2020-01-13
Applicant: KLA Corporation
Inventor： Tal Marciano , Noa Armon , Dana Klein
Abstract: An overlay metrology system includes a controller to receive, from an overlay metrology tool, overlay measurements on multiple sets of overlay targets on a sample with a range of values of a measurement parameter, where a particular set of overlay targets includes overlay targets having one of two or more overlay target designs. The controller may further determine scaling metric values for at least some of the overlay targets, where the scaling metric for a particular overlay target is based on a standard deviation of the overlay measurements of the corresponding set of overlay targets. The controller may further determine a variability of the scaling metric values for each of the two or more sets of overlay targets. The controller may further select, as an output overlay target design, one of the two or more overlay target designs having a smallest scaling metric variability.
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公开(公告)号：US10831108B2
公开(公告)日：2020-11-10
申请号：US15198902
申请日：2016-06-30
Applicant: KLA CORPORATION
Inventor： Tal Marciano , Barak Bringoltz , Evgeni Gurevich , Ido Adam , Ze'ev Lindenfeld , Zeng Zhao , Yoel Feler , Daniel Kandel , Nadav Carmel , Amnon Manassen , Nuriel Amir , Oded Kaminsky , Tal Yaziv , Ofer Zaharan , Moshe Cooper , Roee Sulimarski , Tom Leviant , Noga Sella , Boris Efraty , Lilach Saltoun , Amir Handelman , Eltsafon Ashwal , Ohad Bachar
Abstract: Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.
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公开(公告)号：US20220364855A1
公开(公告)日：2022-11-17
申请号：US16964748
申请日：2020-06-25
Applicant: KLA Corporation
Inventor： Dana Klein , Tal Marciano , Noa Armon
IPC: G01B11/27
Abstract: A method for quantifying sensitivity of metrology to process variation including performing metrology, by a metrology tool, on at least one metrology target located at at least one site on a semiconductor wafer, thereby generating a metrology landscape, and calculating a sensitivity metric directly based on the metrology landscape, the sensitivity metric quantifying a sensitivity of the metrology landscape to process variation involved in manufacture of the semiconductor wafer.
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