公开(公告)号：US11725934B2

公开(公告)日：2023-08-15

申请号：US16964748

申请日：2020-06-25

Applicant: KLA Corporation

Inventor： Dana Klein ,  Tal Marciano ,  Noa Armon

IPC: G01B11/27 ,  H01L21/67 ,  H01L21/66

CPC classification number: G01B11/27 ,  H01L21/67288 ,  H01L22/12

Abstract: A method for quantifying sensitivity of metrology to process variation including performing metrology, by a metrology tool, on at least one metrology target located at at least one site on a semiconductor wafer, thereby generating a metrology landscape, and calculating a sensitivity metric directly based on the metrology landscape, the sensitivity metric quantifying a sensitivity of the metrology landscape to process variation involved in manufacture of the semiconductor wafer.

公开(公告)号：US11333982B2

公开(公告)日：2022-05-17

申请号：US16741574

申请日：2020-01-13

Applicant: KLA Corporation

Inventor： Tal Marciano ,  Noa Armon ,  Dana Klein

IPC: G03F7/20 ,  G06F17/18

Abstract: An overlay metrology system includes a controller to receive, from an overlay metrology tool, overlay measurements on multiple sets of overlay targets on a sample with a range of values of a measurement parameter, where a particular set of overlay targets includes overlay targets having one of two or more overlay target designs. The controller may further determine scaling metric values for at least some of the overlay targets, where the scaling metric for a particular overlay target is based on a standard deviation of the overlay measurements of the corresponding set of overlay targets. The controller may further determine a variability of the scaling metric values for each of the two or more sets of overlay targets. The controller may further select, as an output overlay target design, one of the two or more overlay target designs having a smallest scaling metric variability.

公开(公告)号：US20230051705A1

公开(公告)日：2023-02-16

申请号：US17850888

申请日：2022-06-27

Applicant: KLA Corporation

Inventor： Daniel Kandel ,  Guy Cohen ,  Dana Klein ,  Vladimir Levinski ,  Noam Sapiens ,  Alex Shulman ,  Vladimir Kamenetsky ,  Eran Amit ,  Irina Vakshtein

IPC: G03F7/20 ,  G03F1/48

Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

公开(公告)号：US20200241428A1

公开(公告)日：2020-07-30

申请号：US16741574

申请日：2020-01-13

Applicant: KLA Corporation

Inventor： Tal Marciano ,  Noa Armon ,  Dana Klein

IPC: G03F7/20 ,  G06F17/18

Abstract: An overlay metrology system includes a controller to receive, from an overlay metrology tool, overlay measurements on multiple sets of overlay targets on a sample with a range of values of a measurement parameter, where a particular set of overlay targets includes overlay targets having one of two or more overlay target designs. The controller may further determine scaling metric values for at least some of the overlay targets, where the scaling metric for a particular overlay target is based on a standard deviation of the overlay measurements of the corresponding set of overlay targets. The controller may further determine a variability of the scaling metric values for each of the two or more sets of overlay targets. The controller may further select, as an output overlay target design, one of the two or more overlay target designs having a smallest scaling metric variability.

公开(公告)号：US20220364855A1

公开(公告)日：2022-11-17

申请号：US16964748

申请日：2020-06-25

Applicant: KLA Corporation

Inventor： Dana Klein ,  Tal Marciano ,  Noa Armon

IPC: G01B11/27

Abstract: A method for quantifying sensitivity of metrology to process variation including performing metrology, by a metrology tool, on at least one metrology target located at at least one site on a semiconductor wafer, thereby generating a metrology landscape, and calculating a sensitivity metric directly based on the metrology landscape, the sensitivity metric quantifying a sensitivity of the metrology landscape to process variation involved in manufacture of the semiconductor wafer.

公开(公告)号：US20240094639A1

公开(公告)日：2024-03-21

申请号：US17948151

申请日：2022-09-19

Applicant: KLA Corporation

Inventor： Nadav Gutman ,  Dana Klein ,  Slawomir Czerkas ,  Yossi Simon ,  Frank Laske ,  Mirko Wittkoetter

IPC: G03F7/20 ,  H01L21/66

CPC classification number: G03F7/70625 ,  G03F7/70633 ,  H01L22/12

Abstract: A metrology system may include an optical metrology sub-system to generate optical metrology measurements of optical metrology based on features of the optical metrology targets associated with at least one optical pitch and an additional metrology sub-system to generate additional metrology measurements of the optical metrology targets, where the additional metrology measurements have a higher resolution than the optical metrology measurements, and where the additional metrology sub-system further measures deviations of the optical metrology targets from a reference design. The system may further include a controller to generate accuracy measurements for the optical metrology targets based on the measurements, identify variations of a lithography process based on the deviations, correlate the accuracy measurements to the variations, and adjust at least one of the optical metrology sub-system, a lithography tool, or the reference design based on the correlations.

公开(公告)号：US11249400B2

公开(公告)日：2022-02-15

申请号：US16609736

申请日：2019-09-30

Applicant: KLA CORPORATION

Inventor： Lilach Saltoun ,  Tal Marciano ,  Dana Klein

IPC: G03F7/20 ,  G01B11/27

Abstract: Systems, metrology modules and methods are provided, which identify, per wafer site, components of residuals from measurement of metrology metric(s), and optimize measurement parameters for each site, according to the identified residuals' components. Certain embodiments utilize metric landscapes to identify sensitive sites and/or to identify sites exhibiting highest accuracy, and corresponding metrics may be combined over the wafer to further enhance the metrology performance. Zonal analysis may be used to reduce the systematic errors, and disclosed per-site analysis may be used to further reduce the non-systematic error components, and relate the remaining residuals components to process variation over the wafer.

公开(公告)号：US20200371445A1

公开(公告)日：2020-11-26

申请号：US16609736

申请日：2019-09-30

Applicant: KLA CORPORATION

Inventor： Lilach Saltoun ,  Tal Marciano ,  Dana Klein

IPC: G03F7/20 ,  G01B11/27

Abstract: Systems, metrology modules and methods are provided, which identify, per wafer site, components of residuals from measurement of metrology metric(s), and optimize measurement parameters for each site, according to the identified residuals' components. Certain embodiments utilize metric landscapes to identify sensitive sites and/or to identify sites exhibiting highest accuracy, and corresponding metrics may be combined over the wafer to further enhance the metrology performance. Zonal analysis may be used to reduce the systematic errors, and disclosed per-site analysis may be used to further reduce the non-systematic error components, and relate the remaining residuals components to process variation over the wafer.