公开(公告)号：US11810620B2

公开(公告)日：2023-11-07

申请号：US17458067

申请日：2021-08-26

Applicant: KIOXIA CORPORATION

Inventor： Hiroyuki Takenaka ,  Akihiko Chiba ,  Teppei Higashitsuji ,  Kiyofumi Sakurai ,  Hiroaki Nakasa ,  Youichi Magome

IPC: G11C8/12 ,  G11C16/14 ,  G11C5/06 ,  G11C16/04 ,  G11C16/26 ,  G11C16/16 ,  G11C16/30 ,  G11C16/24

CPC classification number: G11C16/14 ,  G11C5/06 ,  G11C16/0483 ,  G11C16/16 ,  G11C16/24 ,  G11C16/26 ,  G11C16/30

Abstract: A semiconductor storage device includes a first semiconductor substrate, a second semiconductor substrate, a first memory cell and a second memory cell provided between the first semiconductor substrate and the second semiconductor substrate, a first word line electrically connected to the first memory cell, a second word line electrically connected to the second memory cell, a first transistor that is provided on the first semiconductor substrate and electrically connected between the first word line and a first wiring through which a voltage is applied to the first word line, and a second transistor that is provided on the semiconductor substrate and electrically connected between the second word line and a second wiring through which a voltage is applied to the second word line.

公开(公告)号：US12183401B2

公开(公告)日：2024-12-31

申请号：US18480305

申请日：2023-10-03

Applicant: Kioxia Corporation

Inventor： Hiroyuki Takenaka ,  Akihiko Chiba ,  Teppei Higashitsuji ,  Kiyofumi Sakurai ,  Hiroaki Nakasa ,  Youichi Magome

IPC: G11C8/12 ,  G11C5/06 ,  G11C16/04 ,  G11C16/14 ,  G11C16/16 ,  G11C16/24 ,  G11C16/26 ,  G11C16/30

Abstract: A semiconductor storage device includes a first semiconductor substrate, a second semiconductor substrate, a first memory cell and a second memory cell provided between the first semiconductor substrate and the second semiconductor substrate, a first word line electrically connected to the first memory cell, a second word line electrically connected to the second memory cell, a first transistor that is provided on the first semiconductor substrate and electrically connected between the first word line and a first wiring through which a voltage is applied to the first word line, and a second transistor that is provided on the semiconductor substrate and electrically connected between the second word line and a second wiring through which a voltage is applied to the second word line.

公开(公告)号：US11587626B2

公开(公告)日：2023-02-21

申请号：US17336772

申请日：2021-06-02

Applicant: Kioxia Corporation

Inventor： Toru Ozawa ,  Kouji Nakao ,  Yoichi Mizuta ,  Kiyofumi Sakurai ,  Youichi Magome ,  Yoshiaki Takahashi

IPC: G11C16/00 ,  G11C16/30

Abstract: A semiconductor storage device of an embodiment includes a wiring layer M1 and a wiring layer M2. The wiring layer M1 includes a signal line through which a data signal is transferred, and a plurality of dummy patterns formed of a material same as a material of the signal line. The wiring layer M2 includes a voltage supply line through which voltage Vdd is supplied and another voltage supply line through which voltage Vss is supplied. Each of the dummy patterns is electrically connected with any one of the voltage supply lines. In a dummy pattern disposed adjacent to the signal line, a surface facing the signal line is constituted by a first surface positioned at a first distance to the signal line and a second surface positioned at a second distance to the signal line, the second distance being different from the first distance.