公开(公告)号：US20170022595A1

公开(公告)日：2017-01-26

申请号：US15124477

申请日：2015-03-20

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA MATERIALS CO., LTD.

Inventor： Michio SATO ,  Takashi HINO ,  Masashi NAKATANI ,  Takashi NAKAMURA

IPC: C23C4/11 ,  C23C4/134

CPC classification number: C23C4/11 ,  C23C4/134 ,  C23C4/18 ,  C25D11/04

Abstract: The present invention provides a plasma-resistant component for use in a plasma apparatus, wherein an oxide film is formed on at least part of a surface of a substrate of the component, the oxide film is a deposited oxide film formed as an aggregate of polycrystalline particles, the polycrystalline particles being formed by sinter-bonding of microparticles having an average particle size of 0.05 to 3 μm, and the deposited oxide film has a film thickness of 10 μm or more and 200 μm or less and a film density of 90% or more. Due to above structure, it becomes possible to obtain a plasma-resistant component and a method of manufacturing a plasma-resistant component in which the generation of particles removed from the component is stably and effectively suppressed, and damage such as corrosion and deformation rarely occur during the regeneration process.

Abstract translation: 本发明提供了一种用于等离子体装置的耐等离子体成分，其中，氧化膜形成在该部件的基板的表面的至少一部分上，氧化膜是形成为多晶的聚集体的沉积氧化膜 粒子，通过烧结平均粒径为0.05〜3μm的微粒而形成的多晶粒子和沉积氧化物膜的膜厚为10μm以上且200μm以下，膜密度为90％ 或者更多。 由于上述结构，可以获得耐等离子体成分和等离子体组分的制造方法，其中从组分中除去的颗粒的产生被稳定有效地抑制，并且很少发生诸如腐蚀和变形的损伤 在再生过程中。

公开(公告)号：US20170002470A1

公开(公告)日：2017-01-05

申请号：US15039886

申请日：2014-11-26

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA MATERIALS CO., LTD.

Inventor： Michio SATO ,  Takashi HINO ,  Masashi NAKATANI

IPC: C23C24/08 ,  C23F15/00 ,  C23C4/129 ,  B05D1/10

CPC classification number: C23C24/08 ,  B05D1/10 ,  B05D2202/00 ,  B05D2203/30 ,  C04B35/581 ,  C04B35/62222 ,  C04B35/6303 ,  C04B2235/5436 ,  C23C4/129 ,  C23C24/04 ,  C23F15/00 ,  H01J37/32477 ,  H01J2237/334

Abstract: A base material is composed of a metal or ceramics, and an aluminum nitride coating is formed on an outermost surface thereof. The aluminum nitride coating is formed by impact sintering and contains fine particles having a particle diameter of 1 μm or less. A thickness of the aluminum nitride coating is no less than 10 μm. A film density of the aluminum nitride coating is no less than 90%. An area ratio of aluminum nitride particles whose particle boundaries are recognizable existing in a 20 μm×20 μm unit area of the aluminum nitride coating is 0% to 90% while an area ratio of aluminum nitride particles whose particle boundaries are unrecognizable is 10% to 100%. Such a component for a plasma apparatus having the aluminum nitride coating can provide a strong resistance to plasma attack and radical attack.

Abstract translation: 基材由金属或陶瓷构成，在其最外表面形成氮化铝涂层。 氮化铝涂层通过冲击烧结形成，并且包含粒径为1μm以下的细颗粒。 氮化铝涂层的厚度不小于10μm。 氮化铝涂层的膜密度不小于90％。 在氮化铝涂层的20μm×20μm单位面积中存在粒子边界可以识别的氮化铝粒子的面积比为0〜90％，而粒子边界不可识别的氮化铝粒子的面积比为10％〜 100％。 用于具有氮化铝涂层的等​​离子体装置的这种部件可以提供对等离子体攻击和自由基攻击的强烈抗性。

公开(公告)号：US20200165715A1

公开(公告)日：2020-05-28

申请号：US16777371

申请日：2020-01-30

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA MATERIALS CO., LTD.

Inventor： Takashi HINO ,  Tetsuo INOUE ,  Shuichi SAITO

IPC: C23C14/08 ,  H01L21/3065

Abstract: A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤Im/Ic≤0.002.

公开(公告)号：US20190002281A1

公开(公告)日：2019-01-03

申请号：US16125524

申请日：2018-09-07

Applicant: SHIBAURA INSTITUTE OF TECHNOLOGY ,  TOSHIBA MATERIALS CO., LTD.

Inventor： Atsushi YUMOTO ,  Mari SHIMIZU ,  Tetsuo INOUE ,  Takashi HINO ,  Shuichi SAITO

IPC: C01B21/072 ,  H01L21/67 ,  H01L23/373 ,  H05B3/12 ,  C23C14/06

Abstract: An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

公开(公告)号：US20210284535A1

公开(公告)日：2021-09-16

申请号：US17335466

申请日：2021-06-01

Applicant: SHIBAURA INSTITUTE OF TECHNOLOGY ,  TOSHIBA MATERIALS CO., LTD.

Inventor： Atsushi YUMOTO ,  Mari SHIMIZU ,  Tetsuo INOUE ,  Takashi HINO ,  Shuichi SAITO

IPC: C01B21/072 ,  H01L21/67 ,  H01L23/373 ,  H05B3/12 ,  C23C14/06 ,  C23C26/00 ,  C23C24/04 ,  C23C14/28 ,  H05B3/06 ,  H05B3/84

Abstract: An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

公开(公告)号：US20200208253A1

公开(公告)日：2020-07-02

申请号：US16804292

申请日：2020-02-28

Applicant: SHIBAURA INSTITUTE OF TECHNOLOGY ,  TOSHIBA MATERIALS CO., LTD.

Inventor： Atsushi YUMOTO ,  Tomohiro SUGANO ,  Takashi HINO ,  Tetsuo INOUE ,  Shuichi SAITO

IPC: C23C14/08 ,  H01L21/67 ,  H01J37/32 ,  C23C14/28

Abstract: A component comprises a film containing yttrium oxide. A cross section of the film has a first portion, a second portion, and a third portion, and the first to third portions are separated from each other by 0.5 mm or more. A Vickers hardness B1 measured in the first portion, a Vickers hardness B2 measured in the second portion, a Vickers hardness B3 measured in the third portion, and an average value A of the Vickers hardnesses B1 to B3 are numbers satisfying 0.8A≤B1≤1.2A, 0.8A≤B2≤1.2A, and 0.8A≤B3≤1.2A.

公开(公告)号：US20210020415A1

公开(公告)日：2021-01-21

申请号：US17043908

申请日：2019-04-03

Applicant: KYOCERA Corporation ,  Toshiba Materials Co., Ltd.

Inventor： Kazuhiro ISHIKAWA ,  Takashi HINO ,  Shuichi SAITO

IPC: H01J37/32 ,  C23C14/08

Abstract: A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 μm or less.