公开(公告)号：US20210020415A1

公开(公告)日：2021-01-21

申请号：US17043908

申请日：2019-04-03

Applicant: KYOCERA Corporation ,  Toshiba Materials Co., Ltd.

Inventor： Kazuhiro ISHIKAWA ,  Takashi HINO ,  Shuichi SAITO

IPC: H01J37/32 ,  C23C14/08

Abstract: A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 μm or less.

公开(公告)号：US20240279131A1

公开(公告)日：2024-08-22

申请号：US18565056

申请日：2022-05-26

Applicant: KYOCERA CORPORATION

Inventor： Katsuya NAKAMOTO ,  Kazuhiro ISHIKAWA

IPC: C04B41/50 ,  C04B41/00 ,  C23C14/18 ,  C23C14/58

CPC classification number: C04B41/5045 ,  C04B41/009 ,  C23C14/185 ,  C23C14/5853

Abstract: A film-attached member according to the present disclosure includes a base member made of a ceramic, and a film of an oxide, a fluoride, an acid fluoride, or a nitride of a rare earth element on at least a portion of one surface of the base member. An exposed portion of the surface of the base member has hydrophilicity, and a surface of the film has water repellency. Another film-attached member according to the present disclosure includes a base member made of quartz, and a film of an oxide, a fluoride, an acid fluoride, or a nitride of a rare earth element on at least a portion of one surface of the base member. An exposed portion of the surface of the base member has hydrophilicity, and a surface of the film has water repellency.

公开(公告)号：US20250006468A1

公开(公告)日：2025-01-02

申请号：US18687553

申请日：2022-08-31

Applicant: KYOCERA Corporation

Inventor： Motohiro UMEHARA ,  Wataru FUJITA ,  Kazuhiro ISHIKAWA

IPC: H01J37/32 ,  C23C14/18 ,  C23C14/58

Abstract: A plasma-resistant laminate of the present disclosure includes a substrate, a membrane electrode formed on the substrate, and a dielectric layer formed on the membrane electrode, the substrate includes sapphire, the dielectric layer includes an oxide including yttrium, and the membrane electrode is made of an active metal, a constituent element of the substrate or the dielectric layer, or a laminate thereof.

公开(公告)号：US20240343657A1

公开(公告)日：2024-10-17

申请号：US18284510

申请日：2022-03-28

Applicant: KYOCERA CORPORATION

Inventor： Kazuhiro ISHIKAWA

IPC: C04B41/87 ,  C04B35/111 ,  C04B41/45

CPC classification number: C04B41/87 ,  C04B35/111 ,  C04B41/4529 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3418 ,  C04B2235/9646

Abstract: A film-coated member includes a substrate, and a film of an oxide, a fluoride, an oxyfluoride, or a nitride of a rare earth element on at least a part of the substrate. The film has a reflectance greater than 50% at a wavelength of 700 nm and less than 50% at a wavelength of 400 nm.

公开(公告)号：US20220325399A1

公开(公告)日：2022-10-13

申请号：US17764141

申请日：2020-09-29

Applicant: KYOCERA Corporation

Inventor： Kazuhiro ISHIKAWA ,  Takashi HINO ,  Shuichi SAITO

IPC: C23C14/08 ,  C23C14/06 ,  C23C14/34 ,  H01J37/34

Abstract: A component for a plasma processing apparatus includes a substrate and a film on at least a part of the substrate. The film includes an oxide, a fluoride, an oxyfluoride, or a nitride of a rare earth element. A ratio σ22/σ11 of a compressive stress σ11 to occur across a surface of the film to be exposed to plasma and a compressive stress σ22 to occur across the surface in a direction perpendicular to the compressive stress σ11 is 5 or less. A plasma processing apparatus includes the above component.

公开(公告)号：US20210118686A1

公开(公告)日：2021-04-22

申请号：US17043902

申请日：2019-04-03

Applicant: KYOCERA Corporation

Inventor： Kazuhiro ISHIKAWA ,  Takashi HINO ,  Shuichi SAITO

IPC: H01L21/3065 ,  H01L21/02 ,  C23C16/455

Abstract: A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 μm or more and 0.1 μm or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 μm or more and 48 μm or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

公开(公告)号：US20220181123A1

公开(公告)日：2022-06-09

申请号：US17605967

申请日：2020-04-20

Applicant: KYOCERA Corporation

Inventor： Kazuhiro ISHIKAWA ,  Takashi HINO ,  Shuichi SAITO

IPC: H01J37/32 ,  C01F17/218 ,  C23C14/34 ,  C23C14/08

Abstract: A component for a plasma processing apparatus, and a plasma processing apparatus are highly resistant to plasma and are highly durable. The component includes a substrate containing a first element that is a metal element or a semimetal element, and a film located on the substrate and containing yttrium oxide as a main constituent. The film contains yttrium oxide crystal grains oriented with a deviation angle of ±10° from a {111} direction of a crystal lattice plane of yttrium oxide. The yttrium oxide crystal grains oriented with the deviation angle have an area ratio of 45% or greater.