公开(公告)号：US20190002281A1

公开(公告)日：2019-01-03

申请号：US16125524

申请日：2018-09-07

Applicant: SHIBAURA INSTITUTE OF TECHNOLOGY ,  TOSHIBA MATERIALS CO., LTD.

Inventor： Atsushi YUMOTO ,  Mari SHIMIZU ,  Tetsuo INOUE ,  Takashi HINO ,  Shuichi SAITO

IPC: C01B21/072 ,  H01L21/67 ,  H01L23/373 ,  H05B3/12 ,  C23C14/06

Abstract: An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

公开(公告)号：US20210284535A1

公开(公告)日：2021-09-16

申请号：US17335466

申请日：2021-06-01

Applicant: SHIBAURA INSTITUTE OF TECHNOLOGY ,  TOSHIBA MATERIALS CO., LTD.

Inventor： Atsushi YUMOTO ,  Mari SHIMIZU ,  Tetsuo INOUE ,  Takashi HINO ,  Shuichi SAITO

IPC: C01B21/072 ,  H01L21/67 ,  H01L23/373 ,  H05B3/12 ,  C23C14/06 ,  C23C26/00 ,  C23C24/04 ,  C23C14/28 ,  H05B3/06 ,  H05B3/84

Abstract: An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.