公开(公告)号：US20170022595A1

公开(公告)日：2017-01-26

申请号：US15124477

申请日：2015-03-20

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA MATERIALS CO., LTD.

Inventor： Michio SATO ,  Takashi HINO ,  Masashi NAKATANI ,  Takashi NAKAMURA

IPC: C23C4/11 ,  C23C4/134

CPC classification number: C23C4/11 ,  C23C4/134 ,  C23C4/18 ,  C25D11/04

Abstract: The present invention provides a plasma-resistant component for use in a plasma apparatus, wherein an oxide film is formed on at least part of a surface of a substrate of the component, the oxide film is a deposited oxide film formed as an aggregate of polycrystalline particles, the polycrystalline particles being formed by sinter-bonding of microparticles having an average particle size of 0.05 to 3 μm, and the deposited oxide film has a film thickness of 10 μm or more and 200 μm or less and a film density of 90% or more. Due to above structure, it becomes possible to obtain a plasma-resistant component and a method of manufacturing a plasma-resistant component in which the generation of particles removed from the component is stably and effectively suppressed, and damage such as corrosion and deformation rarely occur during the regeneration process.

Abstract translation: 本发明提供了一种用于等离子体装置的耐等离子体成分，其中，氧化膜形成在该部件的基板的表面的至少一部分上，氧化膜是形成为多晶的聚集体的沉积氧化膜 粒子，通过烧结平均粒径为0.05〜3μm的微粒而形成的多晶粒子和沉积氧化物膜的膜厚为10μm以上且200μm以下，膜密度为90％ 或者更多。 由于上述结构，可以获得耐等离子体成分和等离子体组分的制造方法，其中从组分中除去的颗粒的产生被稳定有效地抑制，并且很少发生诸如腐蚀和变形的损伤 在再生过程中。