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    DETERMINATION METHOD AND TREATMENT METHOD
    4.
    发明申请
    DETERMINATION METHOD AND TREATMENT METHOD 有权

    公开(公告)号：US20210341384A1

    公开(公告)日：2021-11-04

    申请号：US17305473

    申请日：2021-07-08

    Applicant: KABUSHIKI KAISHA TOSHIBA ,  Kioxia Corporation ,  TOHOKU UNIVERSITY

    Inventor： Kenya UCHIDA ,  Hiroyuki FUKUI ,  Ikuo UEMATSU ,  Takeaki IWAMOTO ,  Eunsang KWON

    IPC: G01N21/3563 ,  C01B33/107 ,  G01N21/65 ,  G01N24/08

    Abstract: According to one embodiment, a determination method is provided. The determination method determines progress of a treatment of a side-product produced in a process of reacting a substance containing a halogen and silicon or reacting a substance containing silicon and a substance containing a halogen. The treatment of the side-product includes bringing the side-product into contact with a treatment fluid containing water to obtain a first solid matter. The determination method includes determining the progress of the treatment of the side-product based on a signal according to a chemical analysis of at least one of an Si-α bond (α is at least one selected from the group consisting of F, Cl, Br, and I) and an Si—H bond, of the first solid matter.

    PROCESS APPARATUS AND PROCESS METHOD
    5.
    发明申请
    PROCESS APPARATUS AND PROCESS METHOD 有权

    公开(公告)号：US20210331018A1

    公开(公告)日：2021-10-28

    申请号：US17305535

    申请日：2021-07-09

    Applicant: KABUSHIKI KAISHA TOSHIBA ,  Kioxia Corporation ,  TOHOKU UNIVERSITY

    Inventor： Kenya UCHIDA ,  Hiroyuki FUKUI ,  Ikuo UEMATSU ,  Takeaki IWAMOTO ,  Eunsang KWON

    IPC: A62D3/36 ,  C23C16/44

    Abstract: According to an embodiment, a process apparatus performs processing on a byproduct generated in a reaction of a raw material including silicon and a halogen element or in a reaction between a raw material including silicon and a raw material including a halogen element. The apparatus includes a process liquid tank, a processing tank, a supplier and an exhauster. A process target member including the byproduct is introduced into the processing tank. The supplier supplies the process liquid from the process liquid tank to the processing tank and performs processing on the byproduct with the supplied process liquid. The exhauster exhausts a gas generated by reaction between the process liquid and the byproduct from the processing tank.

    MANUFACTURING METHOD OF ELECTRODE AND MANUFACTURING METHOD OF NON-AQUEOUS ELECTROLYTE BATTERY
    7.
    发明申请
    MANUFACTURING METHOD OF ELECTRODE AND MANUFACTURING METHOD OF NON-AQUEOUS ELECTROLYTE BATTERY 审中-公开
    非水电解电池电极制造方法的制造方法

    公开(公告)号：US20140304981A1

    公开(公告)日：2014-10-16

    申请号：US14315996

    申请日：2014-06-26

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Hideaki MORISHIMA ,  Ikuo UEMATSU ,  Masaomi NAKAHATA

    IPC: H01M4/04

    CPC classification number: H01M4/0404 ,  H01M4/139 ,  Y10T29/49115

    Abstract: According to one embodiment, a manufacturing method of an electrode includes supplying a current collector, coating the current collector with a slurry and drying the slurry. In the manufacturing method of the electrode, the current collector is supplied onto a backup roll including annular protruding portions formed on an outer circumferential surface of the backup roll. A surface of the current collector excluding a portion arranged on a plurality of the annular protruding portions is coated with slurry containing an active material. And, then, the slurry is dried.

    Abstract translation: 根据一个实施例，电极的制造方法包括供给集电体，用集电体涂布浆料并干燥浆料。 在电极的制造方法中，将集电体供给到形成在支承辊的外周面上的环状的突出部的支承辊。 除了布置在多个环形突出部分上的部分之外，集电器的表面涂覆有含有活性材料的浆料。 然后，将浆料干燥。

    LAMINATE AND SECONDARY BATTERY
    8.
    发明申请
    LAMINATE AND SECONDARY BATTERY 审中-公开

    公开(公告)号：US20190273235A1

    公开(公告)日：2019-09-05

    申请号：US16289750

    申请日：2019-03-01

    Applicant: Kabushiki Kaisha Toshiba

    Inventor： Ikuo UEMATSU ,  Yuma Kikuchi ,  Tomomichi Naka

    IPC: H01M2/16 ,  H01M10/0585 ,  H01M2/26

    Abstract: According to one embodiment, a laminate includes a first active material-containing layer, a first film and a second film. The first film includes an inorganic material, and a back surface thereof is in contact with a front surface of the first active material-containing layer. The second film includes organic fibers, and one of front and back surfaces is in contact with a front surface of the first film. An absolute value of a difference between surface roughness Ra1 of the front surface of the first active material-containing layer and surface roughness Ra2 of the back surface of the first film is 0.6 μm or less (including 0).

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