公开(公告)号：US20020142623A1

公开(公告)日：2002-10-03

申请号：US10105432

申请日：2002-03-26

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hideshi Miyajima ,  Miyoko Shimada ,  Rempei Nakata

IPC: H01L021/44 ,  H01L021/31 ,  H01L021/469

CPC classification number: H01L21/02137 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/76825 ,  H01L21/76828

Abstract: Disclosed is a method for forming an insulating layer, comprising coating a substrate with an insulating film material to form a coated film, the insulating film material containing at least first and second polymers differing from each other in average molecular weight, and heating the coated film while irradiating the coated film with an electron beam.

Abstract translation: 公开了一种用于形成绝缘层的方法，包括用绝缘膜材料涂覆基底以形成涂膜，所述绝缘膜材料至少含有第一和第二聚合物的平均分子量彼此不同，并且加热涂膜 同时用电子束照射涂膜。

公开(公告)号：US20020187625A1

公开(公告)日：2002-12-12

申请号：US10166757

申请日：2002-06-12

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshiaki Shimooka ,  Hideki Shibata ,  Hideshi Miyajima ,  Kazuhiro Tomioka

IPC: H01L021/44 ,  H01L021/4763 ,  H01L023/48 ,  H01L023/52

CPC classification number: H01L21/76885 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device having a plurality of wiring layers includes: a first insulating film firstly formed in layer; a first wiring layer having a plurality of wirings, formed on the first insulating film; a second wiring layer having a plurality of wirings, formed on or over the first wiring layer; and a second insulating film provided on the first insulating film formed as having a plane surface and the first wiring layer, and formed between adjacent wirings of the second wiring layer, located under the second wiring layer but on the first insulating film and the first wiring layer, at least a part of the second insulating film existing between the first and second wiring layers having a relative dielectric constant lower than a relative dielectric constant of the first insulating film. A method of producing a semiconductor device having a plurality of wiring layers forms a first interlayer-insulating film, forms a plurality of grooves for wiring in the first interlayer-insulating film, fills metallic films in the groves to form wirings, etches the first interlayer-insulating film with the wirings as a mask and removes the interlayer-insulating film between the wirings to provide groves to be filled, and fills a second interlayer-insulating film made of a material of low dielectric constant in the groves to be filled.

Abstract translation: 具有多个布线层的半导体器件包括：首先形成的第一绝缘膜; 形成在所述第一绝缘膜上的具有多个布线的第一布线层; 具有多个布线的第二布线层，形成在所述第一布线层上或上面; 以及第二绝缘膜，其设置在形成为具有平面的第一绝缘膜和第一布线层上，并且形成在第二布线层的相邻配线之间，位于第二布线层下方，但位于第一绝缘膜和第一布线 存在于第一和第二布线层之间的第二绝缘膜的至少一部分具有低于第一绝缘膜的相对介电常数的相对介电常数。 一种制造具有多个布线层的半导体器件的方法形成第一层间绝缘膜，在第一层间绝缘膜中形成用于配线的多个沟槽，填充树脂中的金属膜以形成布线，蚀刻第一夹层 将布线作为掩模，并且去除布线之间的层间绝缘膜以提供要填充的凹槽，并且填充由要填充的凹槽中的低介电常数材料制成的第二层间绝缘膜。

公开(公告)号：US20020086169A1

公开(公告)日：2002-07-04

申请号：US10014593

申请日：2001-12-14

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Rempei Nakata ,  Nobuhide Yamada ,  Hideshi Miyajima ,  Akihiro Kojima ,  Takahiko Kurosawa ,  Eiji Hayashi ,  Youngsoon Seo ,  Atsushi Shiota ,  Kinji Yamada

IPC: B32B009/04

CPC classification number: C08G77/16 ,  C09D183/06 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  Y10T428/31663

Abstract: A method of forming an insulating film which includes the steps of: dissolving in a solvent a first and second polymer which each comprise methylpolysiloxane as the main component and one of which has a weight average molecular weight at least 10 times that of the other to thereby prepare a chemical solution; applying the chemical solution to a semiconductor substrate to form a coating film; and heat-treating the coating film to thereby form an organosilicon oxide film. The weight-average molecular weight of the first polymer is preferably at least 100 times that of the second polymer. Thus, an insulating organosilicon oxide film having a low dielectric constant and high cracking resistance is formed from a coating fluid.

Abstract translation: 一种形成绝缘膜的方法，包括以下步骤：在溶剂中溶解含有甲基聚硅氧烷作为主要成分的第一和第二聚合物，其中一种具有至少10倍于其它重均分子量 准备化学溶液; 将所述化学溶液施加到半导体衬底以形成涂膜; 并对涂膜进行热处理从而形成有机氧化硅膜。 第一聚合物的重均分子量优选为第二聚合物的重均分子量的至少100倍。 因此，由涂布液形成具有低介电常数和高抗开裂性的绝缘性有机硅氧化物膜。

公开(公告)号：US20020061657A1

公开(公告)日：2002-05-23

申请号：US09961490

申请日：2001-09-25

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hideshi Miyajima ,  Nobuhide Yamada ,  Nobuo Hayasaka ,  Nobuyuki Kurashima

IPC: H01L021/44 ,  H01L021/31 ,  H01L021/469

CPC classification number: H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/76819

Abstract: A method of manufacturing a semiconductor device according to an aspect of the present invention comprises forming a low dielectric constant insulating film having a siloxane bond as main skeleton on a semiconductor substrate, causing a surfactant to permeate the low dielectric constant insulating film, and conducting a predetermined step on the low dielectric constant insulating film permeated with the surfactant in a state adapted to be exposed to water.

Abstract translation: 根据本发明的一个方面的制造半导体器件的方法包括在半导体衬底上形成具有硅氧烷键作为主骨架的低介电常数绝缘膜，使表面活性剂渗入低介电常数绝缘膜，并进行 在适于暴露于水的状态下用表面活性剂渗透的低介电常数绝缘膜上的预定步骤。

公开(公告)号：US20020037655A1

公开(公告)日：2002-03-28

申请号：US09963385

申请日：2001-09-27

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Masahiko Hasunuma ,  Hideshi Miyajima ,  Hisashi Kaneko ,  Rempei Nakata

IPC: H01L021/31

CPC classification number: H01L21/67253 ,  H01L21/67017 ,  H01L21/76828

Abstract: A method for manufacturing a semiconductor device, comprising controlling a humidity in an atmosphere around a low dielectric constant insulating film at 30% or less, during a processing period and a transfer period between processing equipments, in which at least a part of said low dielectric constant insulating film is exposed to the atmosphere

Abstract translation: 一种制造半导体器件的方法，包括在处理期间和处理设备之间的转移期间，在低介电常数绝缘膜周围的气氛中控制30％以下的湿度，其中至少部分所述低电介质 恒定绝缘膜暴露在大气中

公开(公告)号：US20020173138A1

公开(公告)日：2002-11-21

申请号：US10141578

申请日：2002-05-09

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hideshi Miyajima ,  Miyoko Shimada ,  Rempei Nakata

IPC: H01L021/4763

CPC classification number: H01L21/76825 ,  H01L21/76828

Abstract: Disclosed is a method for manufacturing a semiconductor device, comprising forming a low dielectric constant insulating film containing Si atoms over a semiconductor substrate, heating the low dielectric constant insulating film while irradiating the low dielectric constant insulating film with an electron beam, and exposing the low dielectric constant insulating film during or after the heating to a gas promoting the bond formation of the Si atoms.

Abstract translation: 公开了一种半导体器件的制造方法，包括在半导体衬底上形成含有Si原子的低介电常数绝缘膜，在用电子束照射低介电常数绝缘膜的同时加热低介电常数绝缘膜，并暴露低 在加热到促进Si原子的键形成的气体期间或之后的介电常数绝缘膜。