公开(公告)号：US20020142623A1

公开(公告)日：2002-10-03

申请号：US10105432

申请日：2002-03-26

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hideshi Miyajima ,  Miyoko Shimada ,  Rempei Nakata

IPC: H01L021/44 ,  H01L021/31 ,  H01L021/469

CPC classification number: H01L21/02137 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/76825 ,  H01L21/76828

Abstract: Disclosed is a method for forming an insulating layer, comprising coating a substrate with an insulating film material to form a coated film, the insulating film material containing at least first and second polymers differing from each other in average molecular weight, and heating the coated film while irradiating the coated film with an electron beam.

Abstract translation: 公开了一种用于形成绝缘层的方法，包括用绝缘膜材料涂覆基底以形成涂膜，所述绝缘膜材料至少含有第一和第二聚合物的平均分子量彼此不同，并且加热涂膜 同时用电子束照射涂膜。

公开(公告)号：US20020086169A1

公开(公告)日：2002-07-04

申请号：US10014593

申请日：2001-12-14

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Rempei Nakata ,  Nobuhide Yamada ,  Hideshi Miyajima ,  Akihiro Kojima ,  Takahiko Kurosawa ,  Eiji Hayashi ,  Youngsoon Seo ,  Atsushi Shiota ,  Kinji Yamada

IPC: B32B009/04

CPC classification number: C08G77/16 ,  C09D183/06 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  Y10T428/31663

Abstract: A method of forming an insulating film which includes the steps of: dissolving in a solvent a first and second polymer which each comprise methylpolysiloxane as the main component and one of which has a weight average molecular weight at least 10 times that of the other to thereby prepare a chemical solution; applying the chemical solution to a semiconductor substrate to form a coating film; and heat-treating the coating film to thereby form an organosilicon oxide film. The weight-average molecular weight of the first polymer is preferably at least 100 times that of the second polymer. Thus, an insulating organosilicon oxide film having a low dielectric constant and high cracking resistance is formed from a coating fluid.

Abstract translation: 一种形成绝缘膜的方法，包括以下步骤：在溶剂中溶解含有甲基聚硅氧烷作为主要成分的第一和第二聚合物，其中一种具有至少10倍于其它重均分子量 准备化学溶液; 将所述化学溶液施加到半导体衬底以形成涂膜; 并对涂膜进行热处理从而形成有机氧化硅膜。 第一聚合物的重均分子量优选为第二聚合物的重均分子量的至少100倍。 因此，由涂布液形成具有低介电常数和高抗开裂性的绝缘性有机硅氧化物膜。

公开(公告)号：US20020037655A1

公开(公告)日：2002-03-28

申请号：US09963385

申请日：2001-09-27

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Masahiko Hasunuma ,  Hideshi Miyajima ,  Hisashi Kaneko ,  Rempei Nakata

IPC: H01L021/31

CPC classification number: H01L21/67253 ,  H01L21/67017 ,  H01L21/76828

Abstract: A method for manufacturing a semiconductor device, comprising controlling a humidity in an atmosphere around a low dielectric constant insulating film at 30% or less, during a processing period and a transfer period between processing equipments, in which at least a part of said low dielectric constant insulating film is exposed to the atmosphere

Abstract translation: 一种制造半导体器件的方法，包括在处理期间和处理设备之间的转移期间，在低介电常数绝缘膜周围的气氛中控制30％以下的湿度，其中至少部分所述低电介质 恒定绝缘膜暴露在大气中

公开(公告)号：US20030181041A1

公开(公告)日：2003-09-25

申请号：US10392967

申请日：2003-03-21

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hiroshi Ikegami ,  Rempei Nakata ,  Takashi Yoda ,  Nobuo Hayasaka ,  Yoshimi Hisatsune

IPC: H01L021/44 ,  H01L023/48 ,  H01L029/40

CPC classification number: H01L23/53238 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/3122 ,  H01L21/76838 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2924/00011 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/19043 ,  H01L2924/30105 ,  Y10S438/959 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2924/01004 ,  H01L2924/00014

Abstract: There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of CnullH bonds and CnullC bonds, and a total amount of C atoms forming the CnullH bonds and C atoms forming the CnullC bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.

公开(公告)号：US20010034191A1

公开(公告)日：2001-10-25

申请号：US09834730

申请日：2001-04-16

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Haruki Nojo ,  Rempei Nakata ,  Masako Kodera ,  Nobuo Hayasaka

IPC: B24B001/00 ,  B24B007/19

CPC classification number: C09G1/02 ,  H01L21/31053

Abstract: According to the present invention, there is provided a polishing method having the steps of forming a film to be polished, having a depressed portion and a protruding portion on a surface of a substrate, and polishing the film to be polished by relatively moving the substrate and a polishing table, while pressing the substrate having the film to be polished, onto a polishing cloth of the polishing table and supplying a polishing solution containing polishing grains, between the film to be polished and the polishing cloth, wherein an organic compound having a molecular weight of 100 or more, and containing at least one hydrophilic group selected from the group consisting of COOM1 (M represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group), SO3H (sulfo group) and SO3M2 (M2 represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group) is added to the polishing solution. Further, there are provided a polishing solution in which polishing grains are dispersed into a dispersion medium, and a polishing agent containing an organic compound having a molecular weight of 100 or more and containing at least one hydrophilic group selected from the group consisting of COOM1 (M represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group), SO3H (sulfo group) and SO3M2 (M2 represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group) added to the polishing solution.

公开(公告)号：US20020173138A1

公开(公告)日：2002-11-21

申请号：US10141578

申请日：2002-05-09

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hideshi Miyajima ,  Miyoko Shimada ,  Rempei Nakata

IPC: H01L021/4763

CPC classification number: H01L21/76825 ,  H01L21/76828

Abstract: Disclosed is a method for manufacturing a semiconductor device, comprising forming a low dielectric constant insulating film containing Si atoms over a semiconductor substrate, heating the low dielectric constant insulating film while irradiating the low dielectric constant insulating film with an electron beam, and exposing the low dielectric constant insulating film during or after the heating to a gas promoting the bond formation of the Si atoms.

Abstract translation: 公开了一种半导体器件的制造方法，包括在半导体衬底上形成含有Si原子的低介电常数绝缘膜，在用电子束照射低介电常数绝缘膜的同时加热低介电常数绝缘膜，并暴露低 在加热到促进Si原子的键形成的气体期间或之后的介电常数绝缘膜。

公开(公告)号：US20020050647A1

公开(公告)日：2002-05-02

申请号：US09946601

申请日：2001-09-06

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hiroshi Ikegami ,  Rempei Nakata ,  Takashi Yoda ,  Nobuo Hayasaka ,  Yoshimi Hisatsune

IPC: H01L023/48

CPC classification number: H01L23/53238 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/3122 ,  H01L21/76838 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2924/00011 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/19043 ,  H01L2924/30105 ,  Y10S438/959 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2924/01004 ,  H01L2924/00014

Abstract: There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of CnullH bonds and CnullC bonds, and a total amount of C atoms forming the CnullH bonds and C atoms forming the CnullC bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.

Abstract translation: 提供一种半导体器件，其包括半导体衬底和在半导体衬底之上的导电层，其中导电层包含铜，导电层的表面区域包含CH键和CC键中的至少一个，并且总量C 形成CH键的原子和在表面区域中形成CC键的C原子在表面区域中的元素的总量为30原子％以上。